Polymer material, composition, and method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-12018107-B2
Application number	US-202117515253-A
Country	US
Kind code	B2
Filing date	Oct 29, 2021
Priority date	Mar 11, 2019
Publication date	Jun 25, 2024
Grant date	Jun 25, 2024

Abstract

According to one embodiment, a polymer material is disclosed. The polymer material contains a polymer. The polymer contains a first monomer unit having a lone pair and an aromatic ring at a side chain, and a second monomer unit including a crosslinking group at a terminal of the side chain, with its molar ratio of 0.5 mol % to 10 mol % to all monomer units in the polymer. The polymer material can be used for manufacturing a composite film as a mask pattern for processing a target film on a substrate. The composite film can be formed by a process including, forming an organic film on the target film with the polymer material, patterning the organic film, and forming the composite film by impregnating a metal compound into the patterned organic film.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, comprising:
forming an organic film on a target film on a semiconductor substrate with a polymer material;
patterning the organic film;
forming a mask pattern composed of a composite film by impregnating a metal compound into the patterned organic film; and
processing the target film by using the mask pattern, wherein
the polymer material contains a polymer containing a first monomer unit having a lone pair and an aromatic ring at a side chain, and
the metal compound is impregnated into the patterned organic film with 10 atom % or more as a metal amount.

2. The method according to claim 1 , wherein
a main component monomer of the polymer is a (meth)acrylate, and
a component monomer of the first monomer unit is an aromatic compound derivative of a (meth)acrylic acid.

3. The method according to claim 1 , wherein
the first monomer unit has two or more lone pair at a side chain.

4. The method according to claim 1 , wherein
the polymer contains a second monomer unit including a crosslinking group at a terminal of the side chain, with its molar ratio of 0.5 mol % to 10 mol % to all monomer units in the polymer.

5. The method according to claim 4 , wherein
the crosslinking group includes a glycidyl group.

6. The method according to claim 5 , wherein
the polymer contains a third monomer unit including a group formable a carboxyl group due to heating or light irradiation at the terminal of the side chain.

7. The method according to claim 4 , wherein
a molar ratio of the first monomer unit to all monomer units in the polymer is 30 mol % to 99.5 mol %.

8. The method according to claim 6 , wherein
a molar ratio of the third monomer unit to all monomer units in the polymer is 0.2 mol % to 50 mol %, and
a molar ratio of the first monomer unit to all monomer units in the polymer is 49.5 mol % to 99.3 mol %.

9. The method according to claim 1 , wherein
the first monomer unit has the lone pair contained in a ester bond (—COO—), a cyano group (—C≡N), a pyridine skeleton, and an amino group (—NH 2 ).

Assignees

• Kioxia Corp

Inventors

• Asakawa Koji
• Sasao Norikatsu
• Sugimura Shinobu

Classifications

• H10P76/204

  of organic photoresist masks · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P95/08

  Planarisation of organic insulating materials · CPC title

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title