Multi-band infrared imaging using stacked colloidal quantum-dot photodiodes

Patent metadata

Field	Value
Publication number	US-12015093-B2
Application number	US-202017422973-A
Country	US
Kind code	B2
Filing date	Jan 31, 2020
Priority date	Feb 1, 2019
Publication date	Jun 18, 2024
Grant date	Jun 18, 2024

Abstract

Photodetectors based on colloidal quantum dots and methods of making the photodetectors are provided. Also provided are methods for doping films of colloidal quantum dots via a solid-state cation exchange method. The photodetectors include multi-band photodetectors composed of two or more rectifying photodiodes stacked in aback-to-back configuration. The doping methods rely on a solid-state cation exchange that employs sacrificial semiconductor nanoparticles as a dopant source for a film of colloidal quantum dots.

First claim

What is claimed is:

1. A method of doping a film of colloidal semiconductor quantum dots, the method comprising:
forming a film of colloidal quantum dots, the colloidal quantum dots comprising a quantum dot cation and a quantum dot anion;
depositing semiconductor nanoparticles on the film of colloidal quantum dots, the semiconductor nanoparticles comprising a nanoparticle cation and a nanoparticle anion, wherein the nanoparticle anion is the same anion as the quantum dot anion; and
contacting the deposited semiconductor nanoparticles with a solution comprising quantum dot precursors in a solvent, the quantum dot precursors comprising a precursor cation and a precursor anion, wherein the quantum dot precursors undergo cation exchange with the semiconductor nanoparticles and the film of colloidal quantum dots becomes doped with nanoparticle cations that are released from the semiconductor nanoparticles during the cation exchange.

2. The method of claim 1 , wherein the colloidal quantum dots are colloidal mercury chalcogenide quantum dots.

3. The method of claim 2 , wherein the mercury chalcogenide quantum dots are HgTe quantum dots.

4. The method of claim 3 , wherein the nanoparticle cations are silver ions.

5. The method of claim 4 , wherein the semiconductor nanoparticles are Ag 2 Te nanoparticles and the quantum dot precursors are HgCl 2 .

6. The method of claim 1 , wherein the colloidal quantum dots are colloidal lead chalcogenide quantum dots or colloidal cadmium chalcogenide quantum dots and the nanoparticle cations are nickel cations, antimony cations, or tin cations.

7. A multi-band photodetector comprising:
a first photodiode comprising a first layer of colloidal quantum dots;
a second photodiode arranged in a stacked, back-to-back configuration with the first photodiode, the second photodiode comprising a second layer of colloidal quantum dots;
a p-doped region doped with silver ions and formed within the first layer of colloidal quantum dots at an interface between the first and second photodiodes;
a p-doped region doped with silver ions and formed within the second layer of colloidal quantum dots at the interface between the first and second photodiode;
a first electrode in electrical communication with the first photodiode;
a second electrode in electrical communication with the second photodiode, wherein at least one of the first and second electrodes is transparent across at least a portion of the electromagnetic spectrum; and
a voltage source configured to apply and adjust a bias voltage across the first and second electrodes, whereby the first photodiode exhibits a photoresponse over a first wavelength range when biased within a first range of bias voltages and the second photodiode exhibits a photoresponse over a second wavelength range when biased within a second range of bias voltages.

8. The photodetector of claim 7 , wherein the first photodiode comprises a first n-type layer between the first layer of colloidal quantum dots and the first electrode, wherein the first n-type layer and the first p-doped region form a first rectifying junction, and further wherein the second photodiode comprises a second n-type layer between the second layer of colloidal quantum dots and the second electrode, wherein the second n-type layer and the second p-doped region form a second rectifying junction.

9. The photodetector of claim 8 , wherein at least one of the first n-type layer and the second n-type layer comprises bismuth chalcogenide nanoparticles.

10. The photodetector of claim 9 , wherein the bismuth chalcogenide nanoparticles comprise Bi 2 Se 3 nanoparticles.

11. The photodetector of claim 7 , wherein the first photodiode comprises a first n-doped region in the first layer of colloidal quantum dots, wherein the first n-doped region and the first p-doped region form a first rectifying junction, and further wherein the second photodiode comprises a second n-doped region in the second layer of colloidal quantum dots, wherein the second n-doped region and the second p-doped region form a second rectifying junction.

12. The photodetector of claim 7 , wherein the first photodiode exhibits a photoresponse in the 0.9 μm to 2.5 μm region of the electromagnetic spectrum, and the second photodiode exhibits a photoresponse in the 3 μm to 5 μm region of the electromagnetic spectrum.

13. The photodetector of claim 7 , wherein the first layer of colloidal quantum dots comprises colloidal quantum dots of a first size, and the second layer of colloidal quantum dots comprises colloidal quantum dots of a second size.

14. The photodetector of claim 7 , wherein the first and second layers of colloidal quantum dots comprise colloidal mercury chalcogenide quantum dots.

15. The photodetector of claim 14 , wherein the mercury chalcogenide quantum dots are HgTe quantum dots.

16. The photodetector of claim 7 , wherein the colloidal quantum dots are colloidal lead chalcogenide quantum dots or cadmium chalcogenide quantum dots.

17. The multi-band photodetector of claim 7 , wherein the p-doped region formed within the first layer of colloidal quantum dots extends to a depth within said first layer of colloidal quantum dots of no more than 50% of the thickness of said first layer of colloidal quantum dots and the p-doped region formed within the second layer of colloidal quantum dots extends to a depth within said second layer of colloidal quantum dots of no more than 50% of the thickness of said second layer of colloidal quantum dots.

18. A bias-switchable multi-band photodetector comprising:
a first electrode;
a second electrode, wherein at least one of the first and second electrodes is transparent across at least a portion of the electromagnetic spectrum;
a first layer of colloidal quantum dots comprising HgTe quantum dots of a first size and exhibiting a photoresponse over a first wavelength range;
a second layer of colloidal quantum dots comprising HgTe quantum dots of a second size and exhibiting a photoresponse over a second wavelength range;
a charge carrier tunneling layer formed from neighboring p-doped regions that are doped with silver and formed within in the first and second layers of colloidal quantum dots;
n-type Bi 2 Se 3 semiconductor nanoparticles between the first electrode and the first layer of colloidal quantum dots and between the second electrode and the second layer of colloidal quantum dots; and
a voltage source configured to apply and adjust a bias voltage across the first and second electrodes.

19. The bias-switchable multi-band photodetector of claim 18 , wherein the neighboring p-doped regions that are formed within the first and second layers of colloidal quantum dots extend to a depth within said first or second layer of colloidal quantum dots of no more than 50% of the thickness of said first or second layer of colloidal quantum dots.

20. A photodetector comprising:
a rectifying photodiode comprising a layer of colloidal quantum dots comprising HgTe quantum dots, wherein the photodiode exhibits a photoresponse over a wavelength range when biased within a range of bias voltages;
a first electrode in electrical communication with the rectifying photodiode;
a second electrode in electrical communication with the rectifying photodiode, wherein at least one of the first and second electrodes is transparent across at least a portion of the electromagnetic spectrum;
a p-doped region doped with silver ions and formed within the layer of colloidal quantum dots at the first electrode side of the

Assignees

• Univ Chicago

Inventors

• Guyot-Sionnest Philippe
• Tang Xin
• Ackerman Matthew M

Classifications

• H10F71/125

  The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe · CPC title

• H10F39/1847

  Multispectral infrared image sensors having a stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures · CPC title

• H10F30/288 Primary

  the devices being sensitive to multiple wavelengths, e.g. multi-spectrum radiation detection devices · CPC title

• H10F77/1433 Primary

  Quantum dots · CPC title

• H10F77/123

  comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe · CPC title