Mid-infrared photodetectors

US10290753B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10290753-B2
Application numberUS-201615062418-A
CountryUS
Kind codeB2
Filing dateMar 7, 2016
Priority dateMay 20, 2011
Publication dateMay 14, 2019
Grant dateMay 14, 2019

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Abstract

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Nanoparticles, methods of manufacture, devices comprising the nanoparticles, methods of their manufacture, and methods of their use are provided herein. The nanoparticles and devices having photoabsorptions in the range of 1.7 μm to 12 μm and can be used as photoconductors, photodiodes, phototransistors, charge-coupled devices (CCD), luminescent probes, lasers, thermal imagers, night-vision systems, and/or photodetectors.

First claim

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What is claimed: 1. A photodetector comprising: a photoabsorptive layer comprising colloidal p-type doped or n-type doped mercury chalcogenide quantum dots having available intraband transitions for absorbing mid-infrared radiation with wavelengths of at least 3 μm via intraband absorption to generate a photoresponsive current; a first electrical connection and a second electrical connection, wherein the first and second electrical connections bridge the photoabsorptive layer; and circuitry configured to measure the photoresponsive current. 2. The photodetector of claim 1 , wherein the colloidal p-type doped or n-type doped mercury chalcogenide quantum dots comprise colloidal mercury selenide quantum dots. 3. The photodetector of claim 2 , wherein the circuitry is further configured to render the photoresponsive current as an image or an image file. 4. The photodetector of claim 1 , wherein the colloidal p-type doped or n-type doped mercury chalcogenide quantum dots have available intraband transitions for absorbing mid-infrared radiation in the wavelength range of 3 μm to 5 μm via intraband absorption to generate the photoresponsive current. 5. The photodetector of claim 1 , wherein the circuitry is further configured to render the photoresponsive current as an image or an image file. 6. The method of claim 1 , wherein the colloidal mercury chalcogenide quantum dots are colloidal p-type doped mercury chalcogenide quantum dots. 7. A device comprising: a photoabsorptive layer comprising colloidal p-type doped or n-type doped mercury chalcogenide quantum dots, wherein the colloidal p-type doped or n-type doped mercury chalcogenide quantum dots have available intraband transitions for absorbing mid-infrared radiation with wavelengths of at least 3 μm via intraband absorption to generate a photoresponsive current. 8. A method of detecting infrared radiation using a photodetector comprising: a photoabsorptive layer comprising colloidal p-type doped or n-type doped mercury chalcogenide quantum dots, wherein the colloidal p-type doped or n-type doped mercury chalcogenide quantum dots have available intraband transitions for absorbing mid-infrared radiation with wavelengths of at least 3 μm via intraband absorption to generate a photoresponsive current; a first electrical connection and a second electrical connection, wherein the first and second electrical connections bridge the photoabsorptive layer; and circuitry configured to measure the photoresponsive current, the method comprising: exposing the colloidal p-type doped or n-type doped mercury chalcogenide quantum dots to mid-infrared radiation, wherein the colloidal p-type doped or n-type doped mercury chalcogenide quantum dots absorb the mid-infrared radiation with wavelengths of at least 3 μm via intraband transitions and generate a photoresponsive current; and measuring the photoresponsive current with the circuitry. 9. The method of claim 8 , wherein the colloidal p-type doped or n-type doped mercury chalcogenide quantum dots comprise colloidal mercury selenide quantum dots. 10. The method of claim 9 , wherein the circuitry is further configured to render the photoresponsive current as an image or an image file, and the method further comprises rendering the photoresponsive current as an image or an image file. 11. The method of claim 8 , wherein the colloidal p-type doped or n-type doped mercury chalcogenide quantum dots absorb mid-infrared radiation in the wavelength range of 3 μm to 5 μm via intraband absorption to generate the photoresponsive current. 12. The method of claim 8 , wherein the circuitry is further configured to render the photoresponsive current as an image or an image file, and the method further comprises rendering the photoresponsive current as an image or an image file. 13. The method of claim 8 , wherein the colloidal mercury chalcogenide quantum dots are colloidal p-type doped mercury chalcogenide quantum dots.

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What does patent US10290753B2 cover?
Nanoparticles, methods of manufacture, devices comprising the nanoparticles, methods of their manufacture, and methods of their use are provided herein. The nanoparticles and devices having photoabsorptions in the range of 1.7 μm to 12 μm and can be used as photoconductors, photodiodes, phototransistors, charge-coupled devices (CCD), luminescent probes, lasers, thermal imagers, night-vision sys…
Who is the assignee on this patent?
Univ Chicago
What technology area does this patent fall under?
Primary CPC classification H01L31/0296. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue May 14 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).