Charged particle beam inspection apparatus and charged particle beam inspection method
US-2018031498-A1 · Feb 1, 2018 · US
US12014895B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12014895-B2 |
| Application number | US-202117540169-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 1, 2021 |
| Priority date | Dec 22, 2020 |
| Publication date | Jun 18, 2024 |
| Grant date | Jun 18, 2024 |
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A multi-beam electronics scanning system using swathing. The system includes an electron emitter source configured to emit an illumination beam. The illumination beam is split into multiple electron beams by a beam splitter lens array. The system also includes an electronic deflection system configured to deflect each of the electron beams in a plurality of directions, including a first direction, along two different axes. Last, a swathing stage is used to move a sample with a constant velocity in a second direction that is parallel to the first direction.
Opening claim text (preview).
What is claimed is: 1. A system comprising: an electron emitter source configured to emit an illumination beam; a beam splitter lens array configured to split the illumination beam into multiple electron beams; an electronic deflection system configured to deflect each of the electron beams in a plurality of directions, including a first direction, along two different axes; and a swathing stage configured to move a sample during writing of scan lines by the electronic beams with a constant velocity in a second direction that is parallel to the first direction, wherein the scan lines are written parallel to the second direction in a rectangular pattern by each of the electron beams, wherein a length of the rectangular pattern is measured along the first direction and the length is longer than a width of the rectangular pattern. 2. The system of claim 1 , wherein the electronic deflection system is further configured to deflect each electron beam along the first direction for a predetermined length of time or predetermined scanning distance. 3. The system of claim 2 , wherein the electronic deflection system is further configured such that after the electronic deflection system deflects an electron beam to the end of the predetermined length of time or predetermined scanning distance, the electronic deflection system will cause the electron beam to move in a third direction that is orthogonal or substantially orthogonal to the first direction. 4. The system of claim 3 , wherein the electronic deflection system is further configured such that after the electron beam moves in the third direction, the electronic deflection system causes the electron beam to move in a fourth direction that is parallel to the second direction. 5. The system of claim 1 , wherein the electronic deflection system is configured to write scan lines in groups of stacked rectangles from the perspective of the sample, wherein each rectangle comprises a predetermined number of scan lines. 6. The system of claim 5 , wherein each rectangle represents a scanned area of the sample, wherein each line adjacent to another line is written in the opposite direction from the other line. 7. The system of claim 6 , wherein the rectangles are written as parallelograms from the perspective of the electronic deflection system to account for constant velocity of the swathing stage. 8. A method comprising: emitting an illumination beam from an electron emitter source; splitting the illumination beam into multiple electron beams using a beam splitter lens array; deflecting, via an electronic deflection system, each of the electron beams in a plurality of directions, including a first direction, along two different axes; and moving a sample during writing of scan lines by the electronic beams with a constant velocity in a second direction that is parallel to the first direction, wherein the scan lines are written parallel to the second direction in a rectangular pattern by each of the electron beams, wherein a length of the rectangular pattern is measured along the first direction and the length is longer than a width of the rectangular pattern. 9. The method of claim 8 , wherein the electronic deflection system is further configured to deflect each electron beam along the first direction for a predetermined length of time or predetermined scanning distance. 10. The method of claim 9 , wherein the electronic deflection system is further configured such that after the electronic deflection system deflects an electron beam to the end of the predetermined length of time or predetermined scanning distance, the electronic deflection system will cause the electron beam to move in a third direction that is orthogonal or substantially orthogonal to the first direction. 11. The method of claim 10 , wherein the electronic deflection system is further configured such that after the electron beam moves in the third direction, the electronic deflection system causes the electron beam to move in a fourth direction that is parallel to the second direction. 12. The method of claim 8 , wherein the electronic deflection system is configured to write scan lines in groups of stacked rectangles from the perspective of the sample, wherein each rectangle comprises a predetermined number of scan lines. 13. The method of claim 12 , wherein each rectangle represents a scanned area of the sample, wherein each line adjacent to another line is written in the opposite direction from the other line. 14. The method of claim 13 , wherein the rectangles are written as parallelograms from the perspective of the electronic deflection system to account for constant velocity of the swathing stage. 15. A non-transitory computer readable medium storing instructions to cause a computer processor to execute a method, the method comprising: emitting an illumination beam from an electron emitter source; splitting the illumination beam into multiple electron beams using a beam splitter lens array; deflecting, via an electronic deflection system, each of the electron beams in a plurality of directions, including a first direction, along two different axes; and moving a sample during writing of scan lines by the electronic beams with a constant velocity in a second direction that is parallel to the first direction, wherein the scan lines are written parallel to the second direction in a rectangular pattern by each of the electron beams, wherein a length of the rectangular pattern is measured along the first direction and the length is longer than a width of the rectangular pattern. 16. The non-transitory computer readable medium of claim 15 , wherein the electronic deflection system is further configured to deflect each electron beam along the first direction for a predetermined length of time or predetermined scanning distance. 17. The non-transitory computer readable medium of claim 16 , wherein the electronic deflection system is further configured such that after the electronic deflection system deflects an electron beam to the end of the predetermined length of time or predetermined scanning distance, the electronic deflection system will cause the electron beam to move in a third direction that is orthogonal or substantially orthogonal to the first direction. 18. The non-transitory computer readable medium of claim 17 , wherein the electronic deflection system is further configured such that after the electron beam moves in the third direction, the electronic deflection system causes the electron beam to move in a fourth direction that is parallel to the second direction. 19. The non-transitory computer readable medium of claim 15 , wherein the electronic deflection system is configured to write scan lines in groups of stacked rectangles from the perspective of the sample, wherein each rectangle comprises a predetermined number of scan lines. 20. The non-transitory computer readable medium of claim 19 , wherein each rectangle represents a scanned area of the sample, wherein each line adjacent to another line is written in the opposite direction from the other line.
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