Exposure apparatus
US-9799489-B2 · Oct 24, 2017 · US
US12014894B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12014894-B2 |
| Application number | US-202118258461-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 20, 2021 |
| Priority date | Dec 25, 2020 |
| Publication date | Jun 18, 2024 |
| Grant date | Jun 18, 2024 |
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A method for manufacturing an electron source includes steps of sandwiching a welding object in which a tip of an electron emission material and a tungsten filament overlap in direct contact between a pair of welding electrodes, and welding the tip and the tungsten filament by causing a current to flow while pressing forces are applied to the welding object by the pair of welding electrodes. A thickness of the welding object is within a range of 50 to 500 μm.
Opening claim text (preview).
The invention claimed is: 1. A method for manufacturing an electron source, the method comprising steps of: sandwiching a welding object in which a tip of an electron emission material and a tungsten filament overlap in direct contact between a pair of welding electrodes; and welding the tip and the tungsten filament by causing a current to flow while pressing forces are applied to the welding object by the pair of welding electrodes, wherein a thickness of the welding object is within a range of 50 to 500 μm. 2. The method according to claim 1 , wherein a cross-sectional shape of a part welded to the tungsten filament in the tip is a square shape or a rectangular shape in which a length of one side is 10 to 300 μm. 3. The method according to claim 1 , wherein the electron emission material is selected from the group consisting of LaB 6 , HfC, and an IrCe compound. 4. The method according to claim 1 , wherein the tungsten filament contains rhenium. 5. An electron source comprising: a tip of an electron emission material; a tungsten filament; and a welding portion in which the tip and the tungsten filament are directly bonded, wherein a thickness of the welding portion is 50 to 500 μm, and wherein the electron emission material is selected from the group consisting of LaB 6 , HfC, and an IrCe compound. 6. An electron source comprising: a tip of an electron emission material; a tungsten filament; and a welding portion in which the tip and the tungsten filament are directly bonded, wherein a thickness of the welding portion is 50 to 500 μm, wherein the tungsten filament contains rhenium. 7. A device comprising the electron source according to claim 5 . 8. A device comprising the electron source according to claim 6 .
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