Composition for surface treatment, method for producing the same, surface treatment method, and method for producing semiconductor substrate

Patent metadata

Field	Value
Publication number	US-12012575-B2
Application number	US-202017429471-A
Country	US
Kind code	B2
Filing date	Jan 6, 2020
Priority date	Mar 26, 2019
Publication date	Jun 18, 2024
Grant date	Jun 18, 2024

Abstract

The present invention provides a means capable of improving a residue removing effect and improving storage stability in a composition for surface treatment which is used for reducing residues on a surface of an object to be polished after being polished chemical mechanical polishing. The present invention relates to a composition for surface treatment, wherein the composition contains a solvent and a dissolved gas, a concentration of the dissolved gas is 0.01 mg/L or more and 10 mg/L or less with respect to a total volume of the composition and the composition is used for reducing residues on a surface of an object to be polished after being polished by chemical mechanical polishing.

First claim

The invention claimed is:

1. A composition for surface treatment, wherein:
the composition comprises a solvent, a water-soluble polymer, and a dissolved gas;
the dissolved gas comprises clean air;
a concentration of the dissolved gas is 0.01 mg/L or more and 10 mg/L or less with respect to a total volume of the composition;
the composition has a pH of 7 or less; and
the composition is used for reducing residues on a surface of a chemically mechanically polished object.

2. A method for producing the composition for surface treatment according to claim 1 , comprising setting the concentration of the dissolved gas to 0.01 mg/L or more and 10 mg/L or less with respect to the total volume of the composition.

3. A surface treatment method comprising:
using the composition for surface treatment according to claim 1 to subject a chemically mechanically polished object to a surface treatment, thereby reducing residues on a surface of the chemically mechanically polished object.

4. The surface treatment method according to claim 3 , wherein the surface treatment is performed by a rinse polishing treatment or a cleaning treatment.

5. A method for producing a semiconductor substrate, the method comprising:
a surface treatment step of reducing residues on a surface of a chemically mechanically polished object by the surface treatment method according to claim 3 ,
wherein the chemically mechanically polished object is a chemically mechanically polished semiconductor substrate.

6. A surface treatment method comprising:
producing a composition for surface treatment by the method according to claim 2 , and using the produced composition for surface treatment to subject a chemically mechanically polished object to a surface treatment, thereby reducing residues on a surface of the chemically mechanically polished object.

7. The surface treatment method according to claim 6 , wherein the surface treatment is performed by a rinse polishing treatment or a cleaning treatment.

8. A method for producing a semiconductor substrate, the method comprising:
a surface treatment step of reducing residues on a surface of a chemically mechanically polished object by the surface treatment method according to claim 6 ,
wherein the chemically mechanically polished object is a chemically mechanically polished semiconductor substrate.

9. The composition according to claim 1 , wherein the dissolved gas is clean air.

10. The composition according to claim 1 , wherein the concentration of the dissolved gas is 7 mg/L or more and 10 mg/L or less with respect to the total volume of the composition.

11. The composition according to claim 1 , wherein the water-soluble polymer comprises a hydroxyl group.

12. The composition according to claim 1 , wherein the water-soluble polymer is a vinyl alcohol-based polymer.

13. The composition according to claim 1 , wherein the water-soluble polymer is polyvinyl alcohol.

Assignees

• Fujimi Inc

Inventors

• Suzuki Keita
• Takahashi Yohei

Classifications

• H10P70/15

  by wet cleaning only (H10P70/52 takes precedence) · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• H10P70/277

  the processing being a planarisation of conductive layers · CPC title

• H10P70/237 Primary

  the processing being a planarisation of insulating layers · CPC title

• C11D7/261

  Alcohols; Phenols · CPC title