Long-term ablation-resistant nitrogen-containing carbide ultra-high temperature ceramic with ultra-high melting point and application thereof

Patent metadata

Field	Value
Publication number	US-12012364-B2
Application number	US-202017264305-A
Country	US
Kind code	B2
Filing date	Jul 10, 2020
Priority date	Nov 29, 2019
Publication date	Jun 18, 2024
Grant date	Jun 18, 2024

Abstract

A long-term ablation-resistant nitrogen-containing carbide ultra-high temperature ceramic with an ultra-high melting point is prepared as follows: preparing the HfC powder and the HfN powder according to a mass ratio of HfC:HfN=(1-7):1; uniformly mixing the HfC powder and the HfN powder with the carbon powder and the carbon nitride powder to obtain a mixed powder, wherein the amount of the carbon powder and the amount of the carbon nitride powder do not exceed 8.0 wt. % and 5.0 wt. %, respectively, of the mixed powder mass; and performing spark plasma sintering on the mixed powder to produce the ceramic with the ultra-high melting point, a density ≥98%, and a uniform C/N content distribution. The ultra-high temperature ceramic is suitable for ultra-high temperature ablation-resistant protection at ≥3000° C. The ceramic maintains a close to zero ablation rate and a continuously stable oxidation-resistant protective structure after ablation for 300 s.

First claim

What is claimed is:

1. A long-term ablation-resistant nitrogen-containing carbide ceramic, wherein a density of the long-term ablation-resistant nitrogen-containing carbide ceramic is greater than or equal to 99.8%, and a C/N content distribution is uniform, and wherein the long-term ablation-resistant nitrogen-containing carbide ceramic is prepared by the following steps:
step 1:
preparing a HfC powder and a HfN powder according to a mass ratio of HfC:HfN=(1-7):1, uniformly mixing the HfC powder and the HfN powder with a carbon powder and a carbon nitride powder to obtain a mixed powder, wherein an amount of the carbon powder is greater than 0 wt. % and does not exceed 8.0 wt. % of a mass of the mixed powder, and an amount of the carbon nitride powder is greater than 0 wt. % and does not exceed 5.0 wt. % of the mass of the mixed powder; and
step 2:
performing a spark plasma sintering on the mixed powder obtained in step 1 to produce the long-term ablation-resistant nitrogen-containing carbide ceramic, wherein conditions of the spark plasma sintering re: a temperature in a sintering furnace is 1500-2400° C., a holding time is 5-60 minutes, a heating rate is 5-150° C./min, a cooling rate is 5-150° C./min, a pressure is 20-60 Mpa, and a vacuum degree is less than 5 Pa.

2. The long-term ablation-resistant nitrogen-containing carbide ceramic of claim 1 , wherein in step 1, the HfC powder and the HfN powder are prepared according to a mass ratio of HfC:HfN=(1-3):1; the HfC powder and the HfN powder are mixed with the carbon powder and the carbon nitride powder uniformly to obtain the mixed powder, wherein the amount of the carbon powder is greater than 0 and does not exceed 8.0 wt. % of the mass of the mixed powder, and the amount of the carbon nitride powder is greater than 0 and does not exceed 5.0 wt. % of the mass of the mixed powder.

3. The long-term ablation-resistant nitrogen-containing carbide ceramic of claim 1 , wherein the HfC powder and the HfN powder in step 1 are nano-sized powders or micro-sized powders; wherein a particle size of the HfC powder and the HfN powder is less than or equal to 10 microns, a particle size of the carbon powder is less than or equal to 10 microns, and a particle size of the carbon nitride powder is less than or equal to 10 microns.

4. The long-term ablation-resistant nitrogen-containing carbide ceramic of claim 1 , wherein a purity of the HfC powder and the HfN powder in step 1 is greater than or equal to 99.9%.

5. The long-term ablation-resistant nitrogen-containing carbide ceramic of claim 1 , wherein raw material powders consisting of the HfC powder, the HfN powder, the carbon powder, and the carbon nitride powder are uniformly mixed by a wet ball milling; and in the wet ball milling, a ball milling speed is controlled to be 200-400 r/min, a ball milling time is 12-24 h, and a mass ratio of a ball milling medium to the raw material powders is (3-10):1.

6. The long-term ablation-resistant nitrogen-containing carbide ceramic of claim 5 , wherein in the wet ball milling, the ball milling medium used is organic, and the ball milling medium is ethanol; and after the wet ball milling, drying is performed at 50-150° C. for 8-12 h in a vacuum atmosphere, then the mixed powder is screened with a 325-mesh sieve, and a screen underflow is taken as a spare material for the spark plasma sintering.

7. The long-term ablation-resistant nitrogen-containing carbide ceramic of claim 1 , wherein after an ablation is performed on the long-term ablation-resistant nitrogen-containing carbide ceramic for 300 s in an oxyacetylene flame environment at 3000° C., a mass ablation rate is 8×10 −3 -9×10 −1 mg/s, and a linear ablation rate is 1×10 −5 mm/s-3×10 −3 mm/s.

8. The long-term ablation-resistant nitrogen-containing carbide ceramic of claim 2 , wherein in step 1, when the HfC powder and the HfN powder are prepared according to the mass ratio of HfC:HfN=3:1, a mass ablation rate and a linear ablation rate of the long-term ablation-resistant nitrogen-containing carbide ceramic after an ablation for 300 s in an oxyacetylene flame environment at 3000° C. are 8×10 −3 mg/s and 1×10 −5 mm/s, respectively.

9. The long-term ablation-resistant nitrogen-containing carbide ceramic of claim 1 , wherein the long-term ablation-resistant nitrogen-containing carbide ceramic is ablation resistant at 3000° C. or above.

10. The long-term ablation-resistant nitrogen-containing carbide ceramic of claim 2 , wherein after an ablation is performed on the long-term ablation-resistant nitrogen-containing carbide ceramic for 300 s in an oxyacetylene flame environment at 3000° C., a mass ablation rate is 8×10 −3 -9×10 −1 mg/s, and a linear ablation rate is 1×10 −5 mm/s-3×10 −3 mm/s.

11. The long-term ablation-resistant nitrogen-containing carbide ceramic of claim 3 , wherein after an ablation is performed on the long-term ablation-resistant nitrogen-containing carbide ceramic for 300 s in an oxyacetylene flame environment at 3000° C., a mass ablation rate is 8×10 −3 -9×10 −1 mg/s, and a linear ablation rate is 1×10 −5 mm/s-3×10 −3 mm/s.

12. The long-term ablation-resistant nitrogen-containing carbide ceramic of claim 4 , wherein after an ablation is performed on the long-term ablation-resistant nitrogen-containing carbide ceramic for 300 s in an oxyacetylene flame environment at 3000° C., a mass ablation rate is 8×10 −3 -9×10 −1 mg/s, and a linear ablation rate is 1×10 −5 mm/s-3×10 −3 mm/s.

13. The long-term ablation-resistant nitrogen-containing carbide ceramic of claim 5 , wherein after an ablation is performed on the long-term ablation-resistant nitrogen-containing carbide ceramic for 300 s in an oxyacetylene flame environment at 3000° C., a mass ablation rate is 8×10 −3 -9×10 −1 mg/s, and a linear ablation rate is 1×10 −5 mm/s-3×10 −3 mm/s.

14. The long-term ablation-resistant nitrogen-containing carbide ceramic of claim 6 , wherein after an ablation is performed on the long-term ablation-resistant nitrogen-containing carbide ceramic for 300 s in an oxyacetylene flame environment at 3000° C., a mass ablation rate is 8×10 −3 -9×10 −1 mg/s, and a linear ablation rate is 1×10 −5 mm/s-3×10 −3 mm/s.

15. The long-term ablation-resistant nitrogen-containing carbide ceramic according to claim 10 , wherein in step 1, the HfC powder and the HfN powder are prepared according to a mass ratio of HfC:HfN=(1-3):1; the HfC powder and the HfN powder are mixed with the carbon powder and the carbon nitride powder uniformly to obtain the mixed powder, wherein the amount of the carbon powder is greater than 0 and does not exceed 8.0 wt. % of the mass of the mixed powder, and the amount of the carbon nitride powder is greater than 0 and does not exceed 5.0 wt. % of the mass of the mixed powder.

16. The long-term ablation-resistant nitrogen-containing carbide ceramic according to claim 10 , wherein the HfC powder and the HfN powder in step 1 are nano-sized powders or micro-sized powders; wherein a particle size of the HfC powder and the HfN powder is less than or equal to 10 microns, a particle size of the carbon powder is less than or equal to 10 microns, and a particle size of the carbon nitride powder is less than or equal to 10 microns.

17. The long-term ablation-resistant nitrogen-containing carbide ceramic according to claim 10 , wherein a purity of the HfC powder and the HfN powder in step 1 is greater than or equal to 99.9%.

18. The long-term ablation-resistant nitrogen-containing carbide ceramic according to claim 10 , wherein raw material powders consisting of the HfC powder, th

Assignees

• Univ Central South

Inventors

• Sun Wei
• Peng Zheng
• Xiong Xiang

Classifications

• C04B2235/9669

  Resistance against chemicals, e.g. against molten glass or molten salts · CPC title

• C04B2235/77

  Density · CPC title

• C04B2235/666

  Applying a current during sintering, e.g. plasma sintering [SPS], electrical resistance heating or pulse electric current sintering [PECS] · CPC title

• C04B2235/6567

  Treatment time · CPC title

• C04B2235/6565

  Cooling rate · CPC title