High pressure low temperature hot pressing method for producing a zirconium carbide ceramic

US9540286B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9540286-B2
Application numberUS-201414182844-A
CountryUS
Kind codeB2
Filing dateFeb 18, 2014
Priority dateFeb 25, 2013
Publication dateJan 10, 2017
Grant dateJan 10, 2017

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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A method for producing monolithic Zirconium Carbide (ZrC) is described. The method includes raising a pressure applied to a ZrC powder until a final pressure of greater than 40 MPa is reached; and raising a temperature of the ZrC powder until a final temperature of less than 2200° C. is reached.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of producing hot-pressed monolithic ZrC, comprising: raising a pressure applied to a powder consisting of ZrC of 99.5% purity until a final pressure of 40 to 60 MPa is reached; raising a temperature of the ZrC powder until a final temperature between 1800 and 2200° C. is reached; placing the ZrC powder and an inert gas into a container; forming a grain size of the monolithic ZrC of less than 12 microns; and compressing the monolithic ZrC to 96%-98% of a theoretical density, wherein the raising the pressure further comprises: raising the pressure at a first rate until a first pressure is reached; maintaining the first pressure; raising the pressure at a second rate until a second pressure is reached; raising the pressure at a third rate until a third pressure is reached; and raising the pressure at a fourth rate until the final pressure is reached. 2. The method of claim 1 , wherein the raising the temperature of the ZrC powder further comprises: raising the temperature of the ZrC powder to a first temperature; maintaining the first temperature; and raising the temperature of the ZrC powder to the final temperature. 3. The method of claim 2 , further comprising maintaining the final pressure and the final temperature simultaneously.

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What does patent US9540286B2 cover?
A method for producing monolithic Zirconium Carbide (ZrC) is described. The method includes raising a pressure applied to a ZrC powder until a final pressure of greater than 40 MPa is reached; and raising a temperature of the ZrC powder until a final temperature of less than 2200° C. is reached.
Who is the assignee on this patent?
Us Energy, Us Dept Energy
What technology area does this patent fall under?
Primary CPC classification C04B35/645. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Jan 10 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).