Selection element with a plurality of amorphous layers

Patent metadata

Field	Value
Publication number	US-12010934-B2
Application number	US-202117168686-A
Country	US
Kind code	B2
Filing date	Feb 5, 2021
Priority date	Feb 7, 2020
Publication date	Jun 11, 2024
Grant date	Jun 11, 2024

Abstract

A selection element including, in a first portion, a stack of amorphous layers, the thickness of each layer in the stack being smaller than or equal to 20 nm.

First claim

The invention claimed is:

1. A selection element comprising, in a first portion, a stack of at least two amorphous layers, the thickness of each layer in the stack being greater than 1 nm and smaller than or equal to 20 nm, wherein:
the stack comprises at least one assembly of first layers and one assembly of second layers, the first and second layers being made of different materials;
the first layers are made of an alloy comprising a group-15 element and a group-16 element; and
the second layers consist of one or more, nitrogen-doped, oxygen-doped, or carbon-doped group-14 elements.

2. The selection element according to claim 1 , wherein at least one of the layers in the stack comprises a group-16 element.

3. The selection element according to claim 1 , wherein at least one of the layers in the stack comprises an element among selenium, tellurium, and sulfur.

4. The selection element according to claim 1 , wherein the stack comprises an alternation of first and of second layers.

5. The selection element according to claim 1 , wherein:
the second layers consist of a nitrogen-doped germanium alloy, and
the first layers are made of an alloy of antimony and of selenium.

6. The selection element according to claim 1 , wherein the material of each first layer of the stack has stoichiometric proportions.

7. The selection element according to claim 1 , comprising a second portion crossing at least certain layers of the stack, made of an alloy of at least part of the components of the layers of the stack.

8. The selection element according to claim 7 , comprising an electrode in contact with the second portion.

9. The selection element according to claim 1 , wherein layers of an assembly of layers of the stack are doped.

10. The selection element according to claim 9 , wherein the layers of the layer assembly-are doped with one or a plurality of dopants among nitrogen, carbon, and silicon.

11. A memory device comprising a storage element arranged electrically in series with a selection element defined according to claim 1 .

12. A selection element comprising, in a first portion, a stack of at least two amorphous layers, the thickness of each layer in the stack being greater than 1 nm and smaller than or equal to 20 nm, wherein:
the stack comprises at least one assembly of first layers and one assembly of second layers, the first and second layers being made of different materials;
the first layers are made of an alloy comprising a group-15 element and a group-16 element;
the second layers consist of one or more, nitrogen-doped, oxygen-doped, or carbon-doped group-14 elements; and
the second layers consist of doped silicon or germanium.

13. A method of manufacturing a selection element comprising forming a stack of at least two amorphous layers, the thickness of each layer being greater than 1 nm and smaller than or equal to 20 nm, wherein:
the stack comprises at least one assembly of first layers and one assembly of second layers, the first and second layers being made of different materials;
the first layers are made of an alloy comprising a group-15 element and a group-16 element; and
the second layers consist of one or more, nitrogen-doped, oxygen-doped, or carbon-doped group-14 elements.

14. The method according to claim 13 , comprising a step during which a current pulse is sent through the stack of layers, to form a portion comprising an alloy of at least part of the components of the layers of the stack.

15. The method according to claim 13 , comprising a step of manufacturing of a lower electrode and the manufacturing of an upper electrode.

16. A selection element comprising, in a first portion, a stack of at least two amorphous layers, the thickness of each layer in the stack being greater than 1 nm and smaller than or equal to 20 nm, wherein:
the stack comprises at least one assembly of first layers and one assembly of second layers, the first and second layers being made of different materials;
the first layers are made of an alloy comprising a group-15 element and a group-16 element;
the second layers consist of one or more doped or undoped group-14 elements;
the second layers consist of a nitrogen-doped germanium alloy, and
the first layers are made of an alloy of antimony and of selenium.

Assignees

• Commissariat Energie Atomique

Inventors

• Navarro Gabriele
• Bernard Mathieu
• Sabbione Chiara
• Cyrille Marie-Claire
• Laguna Camille

Classifications

• H10N70/8828

  Tellurides, e.g. GeSbTe · CPC title

• H10N70/8822

  Sulfides, e.g. CuS · CPC title

• H10N70/026

  by physical vapor deposition, e.g. sputtering · CPC title

• H10B63/20

  comprising selection components having two electrodes, e.g. diodes · CPC title

• H10N70/231

  based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect · CPC title