Semiconductor package structure and method for manufacturing the same

US12009317B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12009317-B2
Application numberUS-202117321139-A
CountryUS
Kind codeB2
Filing dateMay 14, 2021
Priority dateMay 14, 2021
Publication dateJun 11, 2024
Grant dateJun 11, 2024

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The semiconductor package structure includes a substrate, a semiconductor device, an encapsulant, a balance structure, and a warpage-resistant layer. The semiconductor device is disposed on the substrate. The encapsulant encapsulates the semiconductor device. The balance structure is on the semiconductor device and contacting the encapsulant. The warpage-resistant layer is between the semiconductor device and the balance structure. The encapsulant contacts a lateral surface of the warpage-resistant layer.

First claim

Opening claim text (preview).

What is claimed is: 1. A semiconductor package structure, comprising: a substrate; a semiconductor device disposed over the substrate; an encapsulant encapsulating the semiconductor device; a balance structure over the semiconductor device and contacting the encapsulant; and a warpage-resistant layer between the semiconductor device and the balance structure, wherein the warpage-resistance layer comprises a metal layer, wherein the balance structure comprises a metal material directly contacting the warpage-resistant layer; and wherein the warpage-resistant layer comprises a microstructure on a surface contacting the balance structure. 2. The semiconductor package structure as claimed in claim 1 , wherein the warpage-resistant layer comprises titanium/copper. 3. The semiconductor package structure as claimed in claim 1 , wherein the balance structure is entirely above the warpage-resistant layer. 4. The semiconductor package structure as claimed in claim 3 , wherein a lateral surface of the balance structure substantially aligns to a lateral surface of the warpage-resistance layer and a lateral surface of the semiconductor device. 5. The semiconductor package structure as claimed in claim 1 , wherein a bottommost surface of the balance structure directly contacts a topmost surface of the warpage-resistant layer. 6. The semiconductor package structure as claimed in claim 1 , wherein the balance structure is entirely above the warpage-resistant layer, and a bottommost surface of the balance structure directly contacts a topmost surface of the warpage-resistant layer. 7. The semiconductor package structure as claimed in claim 1 , wherein a peripheral outline of the balance structure overlaps a peripheral outline of the substrate from a top view perspective. 8. A semiconductor package structure, comprising: a substrate; a semiconductor device disposed over the substrate; an encapsulant encapsulating the semiconductor device; a balance structure over the semiconductor device and contacting the encapsulant; and a warpage-resistant layer between the semiconductor device and the balance structure, wherein the warpage-resistance layer comprises a metal layer, wherein a surface roughness of an upper surface of the balance structure is greater than a surface roughness of a bottom surface of the balance structure. 9. A semiconductor package structure, comprising: a substrate; a semiconductor device disposed over the substrate; an encapsulant encapsulating the semiconductor device; a balance structure over the semiconductor device and contacting the encapsulant; and a warpage-resistant layer between the semiconductor device and the balance structure, wherein the warpage-resistance layer comprises a metal layer, wherein a surface roughness of an upper surface of the warpage-resistant layer is greater than a surface roughness of a bottom surface of the warpage-resistant layer.

Assignees

Inventors

Classifications

  • the semiconductor body being completely enclosed · CPC title

  • Manufacture or treatment · CPC title

  • Cross-sectional shapes (H10W70/481 takes precedence) · CPC title

  • Auxiliary members characterised by their shape · CPC title

  • Encapsulations, e.g. protective coatings · CPC title

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Frequently asked questions

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What does patent US12009317B2 cover?
A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The semiconductor package structure includes a substrate, a semiconductor device, an encapsulant, a balance structure, and a warpage-resistant layer. The semiconductor device is disposed on the substrate. The encapsulant encapsulates the semiconductor device. The balance structure is…
Who is the assignee on this patent?
Advanced Semiconductor Eng
What technology area does this patent fall under?
Primary CPC classification H10W42/121. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jun 11 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).