Substrate processing method and substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-12009217-B2
Application number	US-202017593071-A
Country	US
Kind code	B2
Filing date	Mar 4, 2020
Priority date	Mar 13, 2019
Publication date	Jun 11, 2024
Grant date	Jun 11, 2024

Abstract

Provided are a substrate processing method and a substrate processing apparatus for forming a low-resistance metal-containing nitride film. The substrate processing method includes: a step of providing a substrate in a processing container; a step of forming a metal-containing nitride film on the substrate by repeating supplying an organic metal-containing gas and a nitrogen-containing gas alternately for a first predetermined number of cycles; a step of modifying the metal-containing nitride film by generating plasma in the processing container; and a step of repeating the step of forming the metal-containing nitride film and the step of modifying the metal-containing nitride film for a second predetermined number of cycles.

First claim

What is claimed is:

1. A substrate processing method comprising:
providing a substrate in a processing container;
forming a metal-containing nitride film on the substrate by repeating supplying an organic metal-containing gas and a nitrogen-containing gas alternately for a first predetermined number of cycles;
modifying the metal-containing nitride film by generating plasma in the processing container; and
repeating the forming the metal-containing nitride film and the modifying the metal-containing nitride film for a second predetermined number of cycles,
wherein a cycle ratio between the supplying the organic metal-containing gas and the nitrogen-containing gas alternately and the modifying the metal-containing nitride film is in a range of 5:1 to 10:1.

2. The substrate processing method of claim 1 , wherein the organic metal-containing gas is at least one of TDMAT, TEMAT, TDEAT, and a cyclopentadienyl Ti complex.

3. The substrate processing method of claim 2 , wherein the nitrogen-containing gas is at least one of NH 3 , monomethylhydrazine, and hydrazine.

4. The substrate processing method of claim 3 , further comprising:
stabilizing a pressure in a processing space in the processing container before the plasma is generated.

5. The substrate processing method of claim 4 , wherein, in the modifying the metal-containing nitride film, plasma of ammonia radicals and hydrogen radicals is generated.

6. The substrate processing method of claim 1 , wherein the nitrogen-containing gas is at least one of NH 3 , monomethylhydrazine, and hydrazine.

7. The substrate processing method of claim 1 , further comprising:
stabilizing a pressure in a processing space in the processing container before the plasma is generated.

8. The substrate processing method of claim 1 , wherein, in the modifying the metal-containing nitride film, plasma of ammonia radicals and hydrogen radicals is generated.

Assignees

• Tokyo Electron Ltd

Inventors

• Takahashi Tsuyoshi
• Nunoshige Yu

Classifications

• H10P14/418 Primary

  the conductive layers comprising transition metals · CPC title

• H10P14/432

  using selective deposition · CPC title

• H01J2237/338

  Changing chemical properties of treated surfaces · CPC title

• H01J37/3244

  Gas supply means · CPC title

• H01J37/32082 Primary

  Radio frequency generated discharge (H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence) · CPC title