Method and system for generating a diffraction image

US12009176B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12009176-B2
Application numberUS-202318321442-A
CountryUS
Kind codeB2
Filing dateMay 22, 2023
Priority dateJul 13, 2021
Publication dateJun 11, 2024
Grant dateJun 11, 2024

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Abstract

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Method and system for generating a diffraction image comprises acquiring multiple frames from a direct-detection detector responsive to irradiating a sample with an electron beam. Multiple diffraction peaks in the multiple frames are identified. A first dose rate of at least one diffraction peak in the identified diffraction peaks is estimated in the counting mode. If the first dose rate is not greater than a threshold dose rate, a diffraction image including the diffraction peak is generated by counting electron detection events. Values of pixels belonging to the diffraction peak are determined with a first set of counting parameter values corresponding to a first coincidence area. Values of pixels not belonging to any of the multiple diffraction peaks are determined using a second, set of counting parameter values corresponding to a second, different, coincidence area.

First claim

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What is claimed is: 1. A method comprising: irradiating a sample with an electron beam; acquiring multiple frames from a detector; identifying multiple diffraction peaks in the multiple frames; and generating a diffraction image including the multiple diffraction peaks from the multiple frames by counting electron detection events, wherein values of pixels belonging to at least a first diffraction peak of the multiple diffraction peaks are determined using a first set of counting parameter values corresponding to a first coincidence area, and values of pixels not belonging to the first diffraction peak are determined using a second set of counting parameter values corresponding to a second, different, coincidence area, and an intensity of the first diffraction peak is determined based on a first dose rate of the first diffraction peak estimated in a counting mode. 2. The method of claim 1 , wherein estimating the first dose rate of the first diffraction peak in the counting mode includes estimating the first dose rate based on an event rate of electron detection events corresponding to the first diffraction peak. 3. The method of claim 1 , wherein an intensity of at least a second diffraction peak of the multiple diffraction peaks is determined based on a second dose rate of the second diffraction peak estimated in an integrating mode. 4. The method of claim 3 , wherein estimating the second dose rate of the second diffraction peak in the integrating mode includes estimating the second dose rate based on an accumulated signal corresponding to the second diffraction peak from the multiple frames and a detector conversion efficiency. 5. The method of claim 4 , wherein the intensity of the second diffraction peak is determined further based on a third dose rate of the second diffraction peak estimated in the counting mode. 6. The method of claim 3 , wherein different regions of the diffraction image include noises of different statistical distributions. 7. A charged particle microscope, comprising: an electron source for generating an electron beam; a sample holder for positioning the sample; a pixelated detector for receiving electrons from the sample; and a controller including a non-transitory memory for storing computer readable instructions, by executing the instructions with a processor, the controller is configured to: irradiate the sample with the electron beam; acquire multiple frames with the detector; estimate a first dose rate of at least a diffraction peak in the acquired frames in a counting mode; responsive to the first dose rate not greater than a threshold dose rate, generate a diffraction image including the diffraction peak by counting electron detection events, wherein values of pixels belonging to the diffraction peak are determined using a first set of counting parameter values corresponding to a first coincidence area, and values of pixels not belonging to any of the multiple diffraction peaks are determined using a second set of counting parameter values corresponding to a second, different, coincidence area; responsive to the first dose rate higher than a threshold dose rate, estimate a second dose rate of the diffraction peak in an integrating mode; determine a best estimated dose rate of the diffraction peak based on the first dose rate and the second dose rate; and generate the diffraction image, wherein an intensity of the diffraction peak is determined based on the best estimated dose rate. 8. The charged particle microscope of claim 7 , wherein acquire multiple frames with the detector includes continuously reading out from multiple detector pixels multiple times before resetting the detector; and obtain the multiple frames by subtracting consecutive readouts. 9. The charged particle microscope of claim 7 , wherein determine a best estimated dose rate of the diffraction peak based on the first dose rate and the second dose rate includes: determine an initial dose rate; determining a first DQE corresponding to the initial dose rate in the counting mode; determining a second DQE corresponding to the initial dose rate in the integrating mode; calculating a weighting factor based on the first DQE and the second DQE; and determining the best estimated dose rate by calculating a weighted sum of the first dose rate and the second dose rate using the weighting factor.

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What does patent US12009176B2 cover?
Method and system for generating a diffraction image comprises acquiring multiple frames from a direct-detection detector responsive to irradiating a sample with an electron beam. Multiple diffraction peaks in the multiple frames are identified. A first dose rate of at least one diffraction peak in the identified diffraction peaks is estimated in the counting mode. If the first dose rate is not…
Who is the assignee on this patent?
Fei Co
What technology area does this patent fall under?
Primary CPC classification H01J37/265. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jun 11 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).