Electronic device including monitoring circuit of ramp signal and operating method thereof
US-2022266845-A1 · Aug 25, 2022 · US
US12005890B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12005890-B2 |
| Application number | US-202217711836-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 1, 2022 |
| Priority date | Apr 1, 2022 |
| Publication date | Jun 11, 2024 |
| Grant date | Jun 11, 2024 |
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A failure detection circuit for an image sensor includes a first input node, an array of second input nodes, and an output stage. The first input node is coupled to a reference voltage. The array of second input nodes has each input node coupled to receive a signal from a bitline of a bitline array in an image sensor that includes an array of pixels with each pixel is coupled to at least one bitline of the bitline array. The output stage is coupled to generate an output voltage indicative of any of the second input nodes being lower than the reference voltage.
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What is claimed is: 1. A failure detection circuit for an image sensor, comprising: a first input node coupled to a reference voltage; an array of second input nodes, each second input node coupled to receive a signal from a bitline of a bitline array in an image sensor comprising an array of pixels, wherein each pixel is coupled to at least one bitline of the bitline array; and an output stage coupled to generate an output voltage indicative of any of the second input nodes being lower than the reference voltage; where each second input node of the array of second input nodes is coupled to a gate of an input transistor, all input transistors of the failure detection circuit having a source tied to a common source node and a drain tied to a common drain node; and where the first input node is coupled to a gate of a reference transistor having a source tied to the common source node. 2. The failure detection circuit of claim 1 , wherein there are at least two input transistors, each of the input transistors having a gate coupled to a second input node of the array of second input nodes. 3. The failure detection circuit of claim 2 , wherein there are at least three input transistors, each coupled to a second input node. 4. The failure detection circuit of claim 1 , further comprising a self-test circuit that emulates a failure in the signal from a bitline of the bitline array. 5. The failure detection circuit of claim 4 , wherein the self-test circuit comprises at least one transistor having a source tied to the common source node and drain tied to the common drain node. 6. The failure detection circuit of claim 1 , wherein the bitline array comprises at least two bitlines. 7. The failure detection circuit of claim 6 , wherein the two bitlines comprise a first bitline coupled to receive a sample and hold reset voltage and a second bitline coupled to receive a sample and hold signal voltage from each pixel of the array of pixels. 8. A method for detecting a failure in a bitline, comprising: receiving an array of input voltages, each input voltage received from a respective bitline of a bitline array; comparing each input voltage of the received array of input voltages with a reference voltage for generating a comparison result; and outputting a combined result from an OR gate with each input corresponding to the generated comparison result for each input voltage; the comparing performed in a circuit having, for each input voltage of the array of input voltages, a transistor with a gate coupled to the each input voltage and a source coupled to a common source node, the common source node being coupled to a source of a reference transistor, the reference transistor having a gate coupled to the reference voltage. 9. The method of claim 8 , in said step of comparing each input voltage, the comparison result being an output voltage indicative of the each input voltage being lower than the reference voltage. 10. The method of claim 8 wherein there are a plurality of input voltages. 11. The method of claim 8 further comprising simulating a failure in a bitline by applying a voltage to a gate of a test transistor having a source coupled to the common source node.
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