Moisture governed growth method of atomic layer ribbons and nanoribbons of transition metal dichalcogenides

Patent metadata

Field	Value
Publication number	US-11981996-B2
Application number	US-202218051962-A
Country	US
Kind code	B2
Filing date	Nov 2, 2022
Priority date	Apr 16, 2020
Publication date	May 14, 2024
Grant date	May 14, 2024

Abstract

A method of making an atomic layer nanoribbon that includes forming a double atomic layer ribbon having a first monolayer and a second monolayer on a surface of the first monolayer, wherein the first monolayer and the second monolayer each contains a transition metal dichalcogenide material, oxidizing at least a portion of the first monolayer to provide an oxidized portion, and removing the oxidized portion to provide an atomic layer nanoribbon of the transition metal dichalcogenide material. Also provided are double atomic layer ribbons, double atomic layer nanoribbons, and single atomic layer nanoribbons prepared according to the method.

First claim

The invention claimed is:

1. A double atomic layer ribbon comprising a first monolayer, a second monolayer on a surface of the first monolayer, and a metal-containing nanoparticle at an end of the second monolayer,
wherein the double atomic layer ribbon is formed by subjecting two or more precursor powders to a moisturized gas flow at a temperature sufficient to deposit the double atomic layer ribbon on a substrate via chemical vapor deposition,
wherein the first monolayer has a first average width and the second monolayer has a second average width that is less than the first average width, and
wherein the first monolayer comprises a first transition metal dichalcogenide material having a first transition metal and a first dichalcogenide, and the second monolayer comprises a second transition metal dichalcogenide material having a second transition metal and a second dichalcogenide.

2. The double atomic layer ribbon according to claim 1 , wherein the first average width is between about 0.1 and about 100 μm.

3. The double atomic layer ribbon according to claim 1 , wherein the second average width is between about 5 and 100 nm.

4. The double atomic layer ribbon according to claim 1 , wherein the metal-containing nanoparticle comprises Ni or Fe.

5. The double atomic layer ribbon according to claim 4 , wherein the metal-containing nanoparticle further comprises Mo, S, or a combination thereof.

6. The double atomic layer ribbon according to claim 5 , wherein the metal-containing nanoparticle is a Ni—Mo—S nanoparticle or an Fe—Mo—S nanoparticle.

7. The double atomic layer ribbon according to claim 4 , wherein at least one of the first transition metal dichalcogenide material and the second transition metal dichalcogenide material comprises molybdenum disulfide.

8. The double atomic layer ribbon according to claim 1 , wherein the metal-containing nanoparticle comprises a metal that is different from the second transition metal.

9. A double atomic layer ribbon comprising a first monolayer, a second monolayer on a surface of the first monolayer, and a metal-containing nanoparticle at an end of the second monolayer, and
wherein the first monolayer comprises a first transition metal dichalcogenide material having a first transition metal and a first dichalcogenide, and the second monolayer comprises a second transition metal dichalcogenide material having a second transition metal and a second dichalcogenide.

10. The double atomic layer ribbon of claim 9 , wherein the metal-containing nanoparticle comprises nickel, iron, or a combination thereof.

11. The double atomic layer ribbon according to claim 9 , wherein at least one of the first transition metal dichalcogenide material and the second transition metal dichalcogenide material comprises molybdenum disulfide.

12. The double atomic layer ribbon according to claim 9 , wherein the first monolayer has a first average width and the second monolayer has a second average width.

13. The double atomic layer ribbon according to claim 12 , wherein the first average width is the same as the second average width.

14. The double atomic layer ribbon according to claim 12 , wherein the first average width is different from the second average width.

15. The double atomic layer ribbon according to claim 12 , wherein the metal-containing nanoparticle comprises a metal that is different from the second transition metal.

Assignees

• Honda Motor Co Ltd

Inventors

• Harutyunyan Avetik R
• Li Xufan

Classifications

• H10P50/644

  Anisotropic liquid etching (H10P50/61 takes precedence) · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10P14/3436

  being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title

• H10P14/3238

  being insulating materials · CPC title

• H10P14/3248

  consisting of two layers · CPC title