Power module with semiconductor packages mounted on metal frame

Patent metadata

Field	Value
Publication number	US-11973012-B2
Application number	US-202117385596-A
Country	US
Kind code	B2
Filing date	Jul 26, 2021
Priority date	Jul 26, 2021
Publication date	Apr 30, 2024
Grant date	Apr 30, 2024

Abstract

A power module includes a metal frame having a first and second device attach pads, first and second semiconductor packages each having an encapsulant body, a die pad exposed at a lower surface of the encapsulant body, a plurality of leads protruding out from the encapsulant body, and a potting compound that encapsulates both of the first and second semiconductor packages and partially covers the metal frame. The first semiconductor package is mounted on the metal frame such that the die pad of the first semiconductor package faces and electrically contacts the first device attach pad. The second semiconductor package is mounted on the metal frame such that the die pad of the second semiconductor package faces and electrically contacts the second device attach pad. The plurality of leads from each of the first and second semiconductor packages are electrically accessible from outside of the potting compound.

First claim

What is claimed is:

1. A power module, comprising:
a metal frame comprising first and second device attach pads;
first and second semiconductor packages each comprising an encapsulant body, a die pad exposed at a lower surface of the encapsulant body, and a plurality of leads protruding out from the encapsulant body; and
a potting compound that encapsulates both of the first and second semiconductor packages and partially covers the metal frame;
wherein the first semiconductor package is mounted on the metal frame such that the die pad of the first semiconductor package faces and electrically contacts the first device attach pad,
wherein the second semiconductor package is mounted on the metal frame such that the die pad of the second semiconductor package faces and electrically contacts the second device attach pad, and
wherein the plurality of leads from each of the first and second semiconductor packages are electrically accessible from outside of the potting compound.

2. The power module of claim 1 , wherein the metal frame further comprises a first interconnect bar that is spaced apart from the first device attach pad, and a second interconnect bar that is spaced apart from the second device attach pad, wherein the leads of the first semiconductor package are electrically connected to the first interconnect bar, and wherein the leads of the second semiconductor package are electrically connected to the second interconnect bar.

3. The power module of claim 2 , wherein the metal frame further comprises a first tab that is continuously connected to the first device attach pad and protrudes out from the potting compound at a first side of the power module, and a second tab that is continuously connected to the second device attach pad and protrudes out from the potting compound at a second side of the power module that is opposite from the first side of the power module.

4. The power module of claim 3 , wherein the metal frame comprises two of the first interconnect bars disposed on either side of the first device attach pad, and two of the second interconnect bars disposed on either side of the second device attach pad.

5. The power module of claim 4 , wherein the first interconnect bars are continuously connected to the second device attach pad, and wherein the metal frame further comprises third tabs that protrude out from the potting compound at the first side of the power module, wherein the third tabs are connected to the second interconnect bars via outer connection spans of the metal frame that are disposed on either side of the first interconnect bars.

6. The power module of claim 2 , further comprising:
a first circuit board mounted on an upper surface of the first semiconductor package; and
a second circuit board mounted on an upper surface of the first semiconductor package,
wherein the first semiconductor package comprises a first group of leads that bend downward and electrically contact the first interconnect bar and a second group of leads that bend upward and electrically contact the first circuit board, and
wherein the second semiconductor package comprises a first group of leads that bend downward and electrically contact the second interconnect bar and a second group of leads that bend upward and electrically contact the second circuit board.

7. The power module of 6 , wherein the power module further comprises press-fit connectors affixed to each of the first and second circuit boards and protruding out from the potting compound, and wherein the press-fit connectors are electrically connected to the first group leads from the first and second semiconductor packages via the first and second circuit boards, respectively.

8. The power module of 6 , further comprising a first discrete electronics component mounted on an upper surface the first circuit board, and a second discrete electronics component mounted on an upper surface the second circuit board.

9. The power module of claim 1 , further comprising:
a metal substrate;
a clamp securing the metal frame and the first and second semiconductor packages to the metal substrate by mechanically pressing against upper surfaces of the first and second semiconductor packages; and
an electrical isolation structure that electrically isolates the metal frame from the metal substrate.

10. The power module of 9 , wherein the electrical isolation structure comprises a layer of electrically insulating material and thermal interface material disposed on either side of the layer of electrically insulating material.

11. The power module of 9 , wherein the electrical isolation structure comprises a power electronics substrate.

12. A power module, comprising:
a metal frame comprising first and second device attach pads;
first and second semiconductor packages that are mounted on the first and second device attach pads, respectively; and
a potting compound that encapsulates both of the first and second discrete transistor packages and partially covers the metal frame,
wherein the power module comprises a half-bridge circuit,
wherein the first semiconductor package is a high-side switch of the half-bridge circuit,
wherein the second semiconductor package is a low-side switch of the half-bridge circuit, and
wherein power module comprises conductive tabs that are exposed from the potting compound and provide electrical accessibility to each terminal of the half-bridge circuit.

13. The power module of 12 , further comprising:
a first circuit board mounted on an upper surface of the first semiconductor package;
a second circuit board mounted on an upper surface of the second semiconductor package,
wherein the first semiconductor package comprises a second group of leads that bend upward and electrically contact the first circuit board, and
wherein the second semiconductor package comprises a second group of leads that bend upward and electrically contact the second circuit board.

14. The power module of 12 , wherein the metal frame further comprises a first interconnect bar that is spaced apart from the first device attach pad, and a second interconnect bar that is spaced apart from the second device attach pad, wherein the leads of the first semiconductor package comprise a first group of leads that bend downward and electrically contact the first interconnect bar, wherein the leads of the second semiconductor package comprise a first group of leads that bend downward and electrically contact the second interconnect bar, and wherein the first interconnect bar is connected to the second device attach pad.

15. A method of producing a power module, the method comprising:
providing a metal frame comprising first and second device attach pads;
providing first and second semiconductor packages each comprising an encapsulant body, a die pad exposed at a lower surface of the encapsulant body, and a plurality of leads protruding out from the encapsulant body; and
mounting the first semiconductor package on the metal frame such that the die pad of the first semiconductor package faces and electrically contacts the first device attach pad,
mounting the second semiconductor package on the metal frame such that the die pad of the second semiconductor package faces and electrically contacts the second device attach pad, and
encapsulating both of the first and second semiconductor packages with a potting compound that encapsulates and partially covers the metal frame.

16. The method of claim 15 , wherein the metal frame further comprises a first interconnect bar that is spaced apart from the first device attach pad, and a second inte

Assignees

• Infineon Technologies Austria Ag

Inventors

• Grassmann Andreas

Classifications

• H10W74/111

  the semiconductor body being completely enclosed · CPC title

• H10W74/016

  using moulds · CPC title

• H10W70/481

  for devices being provided for in groups H10D8/00 - H10D48/00 · CPC title

• H10W70/465

  Bumps or wires · CPC title

• H10W70/461

  specially adapted for cooling · CPC title