Method for manufacturing a silicon-based coriolis-force-based flow sensing device, coriolis-force-based flow sensing device, and system for measuring a property of a fluid

Patent metadata

Field	Value
Publication number	US-11971284-B2
Application number	US-202117204664-A
Country	US
Kind code	B2
Filing date	Mar 17, 2021
Priority date	Mar 20, 2020
Publication date	Apr 30, 2024
Grant date	Apr 30, 2024

Abstract

Embodiments of a Coriolis-force-based flow sensing device and embodiments of methods for manufacturing embodiments of the Coriolis-force-based flow sensing device, comprising the steps of: forming a driving electrode; forming, on the driving electrode, a first sacrificial region; forming, on the first sacrificial region, a first structural portion with a second sacrificial region buried therein; forming openings for selectively etching the second sacrificial region; forming, within the openings, a porous layer having pores; removing the second sacrificial region through the pores of the porous layer, forming a buried channel; growing, on the porous layer and not within the buried channel, a second structural portion that forms, with the first structural region, a structural body; selectively removing the first sacrificial region thus suspending the structural body on the driving electrode.

First claim

The invention claimed is:

1. A Coriolis-force-based flow sensing device, comprising:
a silicon substrate;
an insulating layer on a surface of the substrate;
at least one driving electrode on the insulating layer;
a silicon structural body partially overlapping the driving electrode, the silicon structural body having a buried channel;
a porous polycrystalline layer of the silicon structural body at least partially delimiting the buried channel, and the porous polycrystalline layer including pores permeable to an etching fluid; and
a chamber between the silicon structural body and the substrate, the at least one driving electrode being in the chamber.

2. The device of claim 1 wherein the driving electrode and the silicon structural body are coupled to generate an electrostatic force, during use, to vibrate the silicon structural body.

3. The device of claim 2 , further comprising a sensing electrode on the insulating layer, the sensing electrode being coplanar with the driving electrode, the silicon structural body at least partially overlapping the sensing electrode, the silicon structural body capacitively coupled to the sensing electrode and configured during use, to sense a vibration of the silicon structural body.

4. The device of claim 1 , wherein the buried channel further comprises a fluid-input port and a fluid-output port, configured to let in and, respectively, let out a fluid having a property to be measured.

5. The device of claim 1 , wherein the pores of the porous polycrystalline layer include pores with diameters ranging from 1 to 50 nanometers (nm).

6. The device of claim 5 , wherein:
the silicon structural body further comprises a first silicon structural layer, a second silicon structural layer, and a third silicon structural layer;
the first silicon structural layer is on the insulating layer;
the second silicon structural layer is on the first silicon structural layer;
the porous polycrystalline layer is on the second silicon structural layer and is between the second silicon structural layer and the third silicon structural layer; and
the third silicon structural layer is on the porous polycrystalline layer.

7. A system for measuring a property of a fluid, comprising:
a Coriolis-force-based flow sensing device that includes:
a substrate;
an insulating layer on a surface of the substrate;
at least one driving electrode on the insulating layer,
a structural body partially overlapping the driving electrode, the structural body having a buried channel, the buried channel having a first side and a second side opposite to the first side, the first side of the buried channel being closer to the substrate than the second side of the buried channel, the driving electrode and the structural body being coupled together, the structural body forming a chamber between the buried channel and the substrate, the driving electrode being in the chamber;
a porous layer that partially delimits the second side of the buried channel;
a fluid-input port and a fluid-output port in fluid communication with the buried channel;

a fluid-recirculating device fluidically connected to the fluid-input port and the fluid-output port, the fluid-recirculating device configured to cause a fluid to flow through the buried channel;
driving circuitry configured to bias the driving electrode with respect to the structural body to vibrate the structural body when the fluid flows through the buried channel; and
a sensor configured to sense a vibration of the structural body.

8. The system of claim 7 , further comprising a sensing electrode on the insulating layer, the sensing electrode being coplanar with the driving electrode, the structural body at least partially overlapping the sensing electrode, the structural body capacitively coupled to the sensing electrode so that, during use, a vibration of the structural body can be sensed.

9. The system of claim 7 , wherein the driving electrode and the structural body are coupled to generate an electrostatic force, during use, to vibrate the structural body.

10. The system of claim 9 , further comprising a sensing electrode on the insulating layer, the sensing electrode being coplanar with the driving electrode, the structural body at least partially overlapping the sensing electrode, the structural body capacitively coupled to the sensing electrode so that, during use, a vibration of the structural body can be sensed.

11. The system of claim 7 , wherein the buried channel further includes the fluid-input port and the fluid-output port, and the fluid-input port and the fluid-output port are configured to let in and, respectively, let out a fluid having a property to be measured.

12. The system of claim 7 , wherein the porous layer includes pores permeable to an etching fluid.

13. A Coriolis-force-based flow sensing device, comprising:
a substrate including a first surface;
an insulating layer on the first surface of the substrate;
at least one driving electrode on the insulating layer; and
a structural body including:
a second surface opposite to a third surface, the third surface facing the first surface of the substrate;
a suspended portion that overlaps and is suspended over the driving electrode;
a buried channel within the suspended portion, the buried channel being between the second surface and the third surface;
a first structural layer on the insulating layer;
a second structural layer on the first structural layer, the second structural layer including a plurality of apertures that extend through the second structural layer; and
a porous layer on the second structural layer and in the plurality of apertures, the porous layer at least partially delimiting the buried channel, and the porous layer including pores permeable to an etching fluid; and

a chamber in the structural body at the third surface, the chamber being between the structural body and the first surface of the substrate, the at least one driving electrode being in the chamber.

14. The device of claim 13 , wherein the pores of the porous layer include pores with diameters ranging from 1 to 50 nanometers (nm).

15. The device of claim 13 wherein the suspended portion of the structural body includes the first structural layer, the second structural layer, the porous layer, and a third structural layer.

16. The device of claim 15 , wherein the first structural layer, the second structural layer, the porous layer, and the third structural layer are silicon-based layers.

17. The device of claim 13 , wherein the buried channel is delimited by the first structural layer and the second structural layer.

18. The device of claim 17 , wherein the at least one driving electrode is within the chamber.

19. The device of claim 13 , further comprising a chamber between the suspended portion and the insulating layer.

20. The device of claim 13 , wherein the buried channel further comprises a fluid-input port and a fluid-output port, configured to let in and, respectively, let out a fluid having a property to be measured.

Assignees

• St Microelectronics Srl

Inventors

• Gattere Gabriele
• Rizzini Francesco
• Guerinoni Luca
• Corso Lorenzo
• Giusti Domenico

Classifications

• G01F1/8472 Primary

  having curved measuring conduits, i.e. whereby the measuring conduits' curved center line lies within a plane (G01F1/8481 takes precedence) · CPC title

• G01F1/8404

  details of flowmeter manufacturing methods · CPC title

• B81B7/02 Primary

  containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS] (B81B7/04 takes precedence) · CPC title

• G01F1/8445 Primary

  micromachined flowmeters · CPC title

• B81C1/00015

  for manufacturing microsystems · CPC title