Puncture forming method, sample separating method, semiconductor element manufacturing method, semiconductor laser element manufacturing method, and semiconductor laser element

Patent metadata

Field	Value
Publication number	US-11967797-B2
Application number	US-202017061936-A
Country	US
Kind code	B2
Filing date	Oct 2, 2020
Priority date	Apr 5, 2018
Publication date	Apr 23, 2024
Grant date	Apr 23, 2024

Abstract

A puncture forming method is a method of forming punctures in a sample by irradiating a surface of the sample with a light beam. The puncture forming method includes: forming a first puncture by irradiating a first position on the surface of the sample with a first pulse of the light beam; and after the forming of the first puncture, forming a second puncture which at least partially overlaps the first puncture by irradiating, with a second pulse of the light beam, a second position on the surface of the sample positioned away from the first position in a first direction. The second puncture has a tip which is positioned inside the sample and which is bent in a direction opposite to the first direction.

First claim

What is claimed is:

1. A puncture forming method of forming a puncture in a sample by irradiating a surface of the sample with a light beam, the puncture forming method comprising:
forming a first puncture by irradiating a first position on the surface of the sample with a first pulse of the light beam; and
forming a second puncture by irradiating a second position on the surface of the sample with a second pulse of the light beam after the forming of the first puncture, the second puncture at least partially overlapping the first puncture, the second position being positioned away from the first position in a first direction,
wherein the second puncture has a tip positioned inside the sample, the tip being bent in a direction opposite to the first direction.

2. The puncture forming method according to claim 1 ,
wherein the light beam is polarized in a direction perpendicular to the first direction.

3. The puncture forming method according to claim 1 ,
wherein the light beam is a laser beam.

4. A semiconductor element manufacturing method of manufacturing a semiconductor element by separating a semiconductor element substrate, the semiconductor element manufacturing method comprising:
forming a first puncture by irradiating a first position on a surface of the semiconductor element substrate with a first pulse of a light beam;
forming a second puncture by irradiating a second position on the surface of semiconductor element substrate with a second pulse of the light beam after the forming of the first puncture, the second puncture at least partially overlapping the first puncture, the second position being positioned away from the first position in a first direction; and
separating the semiconductor element substrate along a recess after the forming of the second puncture, the recess being formed by the first puncture and the second puncture,
wherein the second puncture has a tip positioned inside the semiconductor element substrate, the tip being bent in a direction opposite to the first direction.

5. A sample separating method of separating a sample, the sample separating method comprising:
forming a recess in the sample; and
separating the sample along the recess,
wherein the recess includes a first region and a second region, the first region having a line shape along a first direction in a plan view of the sample and having a planar shape in a vertical cross-sectional view of the sample, the planar shape spreading to a plane defined by the first direction and a second direction which is a depth direction of the sample, the second region having a line shape extending from the first region in a direction opposite to the first direction.

6. A semiconductor element manufacturing method of manufacturing a semiconductor element by separating a semiconductor element substrate, the semiconductor element manufacturing method comprising:
forming a recess in the semiconductor element substrate; and
separating the semiconductor element substrate along the recess,
wherein the recess includes a first region and a second region, the first region having a line shape along a first direction in a plan view of the semiconductor element substrate and having a planar shape in a vertical cross-sectional view of the semiconductor element substrate, the planar shape spreading to a plane defined by the first direction and a second direction which is a depth direction of the semiconductor element substrate, the second region having a line shape extending from the first region in a direction opposite to the first direction.

7. A semiconductor laser element manufacturing method of manufacturing a semiconductor laser element by separating a semiconductor laser element substrate, the semiconductor laser element manufacturing method comprising:
forming a recess in the semiconductor laser element substrate; and
separating the semiconductor laser element substrate along the recess,
wherein the recess includes a first region and a second region, the first region having a line shape along a first direction in a plan view of the semiconductor laser element substrate and having a planar shape in a vertical cross-sectional view of the semiconductor laser element substrate, the planar shape spreading to a plane defined by the first direction and a second direction which is a depth direction of the semiconductor laser element substrate, the second region having a line shape extending from the first region in a direction opposite to the first direction.

8. The semiconductor laser element manufacturing method according to claim 7 ,
wherein the first region includes a side portion below an opening of the recess in the plan view of the semiconductor laser element substrate, and
the second region extends from the side portion.

9. The semiconductor laser element manufacturing method according to claim 7 ,
wherein, in the vertical cross-sectional view of the semiconductor laser element substrate, the first region has a cross-sectional shape which is one of a substantially triangular shape and a substantially trapezoidal shape having an upper base and a lower base shorter than the upper base, the upper base being a surface side of the semiconductor laser element substrate.

10. The semiconductor laser element manufacturing method according to claim 7 ,
wherein the recess includes a plurality of the second regions.

11. The semiconductor laser element manufacturing method according to claim 10 ,
wherein, in the vertical cross-sectional view of the semiconductor laser element substrate, among the plurality of the second regions, a second region positioned further from a surface of the semiconductor laser element substrate is longer than a second region positioned closer to the surface of the semiconductor laser element substrate.

12. The semiconductor laser element manufacturing method according to claim 7 ,
wherein the second region has a tip which is bent in a direction opposite to the first region.

13. The semiconductor laser element manufacturing method according to claim 7 ,
wherein, in the separating, the semiconductor laser element substrate is separated such that a crack advances from a first region side toward a second region side.

14. The semiconductor laser element manufacturing method according to claim 7 ,
wherein, when a direction perpendicular to both the first direction and the second direction is a third direction,
the second region has a tip which is bent in the third direction, and
a bending length of the second region in the third direction is less than a length of the second region in the first direction.

15. The semiconductor laser element manufacturing method according to claim 7 ,
wherein a length of the second region in the first direction is less than a length of the second region in the second direction.

16. The semiconductor laser element manufacturing method according to claim 15 ,
wherein, in the vertical cross-sectional view of the semiconductor laser element substrate, the first region includes a plurality of stripe portions extending from a surface of the semiconductor laser element substrate to an inner side of the semiconductor laser element substrate.

17. The semiconductor laser element manufacturing method according to claim 7 ,
wherein, in a side view of the semiconductor laser element substrate, after the separating, a separated surface of the semiconductor laser element substrate includes a step extending in a direction from the first region toward a back surface of the semiconductor laser element substrate and a step extending in a directi

Assignees

• Nuvoton Technology Corp Japan

Inventors

• Ikeda Daisuke
• Kitagawa Hideo
• Asaka Hiroshi
• Ono Masayuki

Classifications

• H10P54/00

  Cutting or separating of wafers, substrates or parts of devices · CPC title

• H01S5/0201 Primary

  Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth · CPC title

• H01S5/0202

  Cleaving · CPC title

• B23K26/0622

  by shaping pulses · CPC title

• B23K26/082

  Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head · CPC title