Semiconductor film composition, method for manufacturing semiconductor film composition, method for manufacturing semiconductor member, method for manufacturing semiconductor processing material, and semiconductor device

Patent metadata

Field	Value
Publication number	US-11965109-B2
Application number	US-202016929638-A
Country	US
Kind code	B2
Filing date	Jul 15, 2020
Priority date	Nov 16, 2015
Publication date	Apr 23, 2024
Grant date	Apr 23, 2024

Abstract

Provided is a composition for forming a film for semiconductor devices, including: a compound (A) including a Si—O bond and a cationic functional group containing at least one of a primary nitrogen atom or a secondary nitrogen atom; a crosslinking agent (B) which includes three or more —C(═O)OX groups (X is a hydrogen atom or an alkyl group having from 1 to 6 carbon atoms) in the molecule, in which from one to six of three or more —C(═O)OX groups are —C(═O)OH groups, and which has a weight average molecular weight of from 200 to 600; and a polar solvent (D).

First claim

The invention claimed is:

1. A composition for forming a film for semiconductor devices, comprising:
a compound (A) including a Si—O bond and a cationic functional group containing at least one of a primary nitrogen atom or a secondary nitrogen atom;
a crosslinking agent (B) which includes three or more —C(═O)OX groups (X is a hydrogen atom or an alkyl group having from 1 to 6 carbon atoms) in a molecule, wherein from one to six of the three or more —C(═O)OX groups are —C(═O)OH groups, and wherein in the three or more —C(═O)OX groups, at least one X is an alkyl group having from 1 to 6 carbon atoms, the crosslinking agent (B) having a weight average molecular weight of from 200 to 600; and
a polar solvent (D).

2. A composition for forming a film for semiconductor devices, comprising:
a compound (A) including a Si—O bond and a cationic functional group containing at least one of a primary nitrogen atom or a secondary nitrogen atom, and having a weight average molecular weight of from 130 to 10,000;
a crosslinking agent (B) which includes three or more —C(═O)OX groups (X is a hydrogen atom or an alkyl group having from 1 to 6 carbon atoms) in a molecule, wherein from one to six of the three or more —C(═O)OX groups are —C(═O)OH groups, and wherein in the three or more —C(═O)OX groups, at least one X is an alkyl group having from 1 to 6 carbon atoms, the crosslinking agent (B) having a weight average molecular weight of from 200 to 600; and
a polar solvent (D).

3. The composition for forming a film for semiconductor devices according to claim 1 , wherein the crosslinking agent (B) has a ring structure in the molecule.

4. The composition for forming a film for semiconductor devices according to claim 1 , further comprising at least one additive (C) selected from the group consisting of an acid (C-1) having a carboxy group and a base (C-2) having a nitrogen atom, wherein the acid (C-1) has a weight average molecular weight of from 46 to 195, and the base (C-2) has a weight average molecular weight of from 17 to 120.

5. The composition for forming a film for semiconductor devices according to claim 1 , comprising at least one selected from the group consisting of an aliphatic amine having a weight average molecular weight of from 10,000 to 400,000 and an amine compound having a ring structure in a molecule and having a weight average molecular weight of from 90 to 600.

6. The composition for forming a film for semiconductor devices according to claim 1 , which is used for a filling material for a recess formed on a substrate.

7. The composition for forming a film for semiconductor devices according to claim 1 , which is used in a multilayer resist method.

8. A method of manufacturing the composition for forming a film for semiconductor devices according to claim 1 ,
the method comprising:
mixing the compound (A) and the crosslinking agent (B).

9. The method according to claim 8 , wherein the mixing comprises mixing a mixture of an acid (C-1) having a carboxy group and having a weight average molecular weight of from 46 to 195 and the compound (A), and the crosslinking agent (B).

10. The method according to claim 8 , wherein the mixing comprises mixing a mixture of a base (C-2) having a nitrogen atom and having a weight average molecular weight of from 17 to 120 and the crosslinking agent (B), and the compound (A).

11. A method of manufacturing a semiconductor member using the composition for forming a film for semiconductor devices according to claim 1 , the method comprising:
applying the composition for forming a film for semiconductor devices to a substrate; and
heating the substrate to which the composition for forming a film for semiconductor devices has been applied, at a temperature of from 250° C. to 425° C.

12. A method of manufacturing a semiconductor processing material using the composition for forming a film for semiconductor devices according to claim 1 , the method comprising:
applying the composition for forming a film for semiconductor devices to a substrate; and
heating the substrate to which the composition for forming a film for semiconductor devices has been applied, at a temperature of from 250° C. to 425° C.

13. A semiconductor device comprising:
a substrate; and
a reaction product of a compound (A) including a Si—O bond and a cationic functional group containing at least one of a primary nitrogen atom or a secondary nitrogen atom, and having a weight average molecular weight of from 130 to 10,000, and a crosslinking agent (B) which includes three or more —C(═O)OX groups (X is a hydrogen atom or an alkyl group having from 1 to 6 carbon atoms) in a molecule, wherein from one to six of the three or more —C(═O)OX groups are —C(═O)OH groups, and wherein in the three or more —C(═O)OX groups, at least one X is an alkyl group having from 1 to 6 carbon atoms, the crosslinking agent (B) having a weight average molecular weight of from 200 to 600.

14. The semiconductor device according to claim 13 , wherein the reaction product includes at least one of an amide bond or an imide bond.

Assignees

• Mitsui Chemicals Inc

Inventors

• Kayaba Yasuhisa
• Tanaka Hirofumi
• Inoue Koji

Classifications

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P14/6928

  the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides · CPC title

• H10P14/6534

  by exposure to a liquid · CPC title

• H10P14/6516

  of treatments performed after formation of the materials · CPC title

• H10P14/6342

  Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title