Semiconductor device and method for manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-11955562-B2
Application number	US-202217889597-A
Country	US
Kind code	B2
Filing date	Aug 17, 2022
Priority date	Jul 6, 2018
Publication date	Apr 9, 2024
Grant date	Apr 9, 2024

Abstract

A semiconductor device having a large on-state current and high reliability is provided. The semiconductor device includes a first insulator, a first oxide over the first insulator, a second oxide over the first oxide, a third oxide and a fourth oxide over the second oxide, a first conductor over the third oxide, a second conductor over the fourth oxide, a fifth oxide over the second oxide, a second insulator over the fifth oxide, and a third conductor over the second insulator. The fifth oxide is in contact with a top surface of the second oxide, a side surface of the first conductor, a side surface of the second conductor, a side surface of the third oxide, and a side surface of the fourth oxide. The second oxide contains In, an element M, and Zn. The first oxide and the fifth oxide each contain at least one of constituent elements included in the second oxide. The third oxide and the fourth oxide each contain the element M. The third oxide and the fourth oxide include a region where the concentration of the element M is higher than that in the second oxide.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a first insulator;
a first oxide over the first insulator;
a second oxide over and in contact with the first oxide;
a first conductor over the second oxide;
a second conductor over the second oxide;
a second insulator covering the first oxide, the second oxide, the first conductor, and the second conductor;
a third insulator over the second insulator;
a third oxide over the second oxide, the third oxide being provided in an opening of the third insulator;
a fourth insulator over the third oxide; and
a third conductor over the third insulator,
wherein the third oxide is in contact with a top surface of the second oxide, a first side surface of the first conductor and a first side surface of the second conductor,
wherein the third oxide is in contact with a side surface of the third insulator in the opening,
wherein the second oxide comprises In, an element M, and Zn, where the element M is Al, Ga, Y, or Sn,
wherein the second insulator is in contact with a top surface of the first conductor, a top surface of the second conductor, a second side surface of the first conductor, a second side surface of the second conductor, a side surface of the second oxide, and a side surface of the first oxide, and
wherein the third oxide comprises aluminum.

2. The semiconductor device according to claim 1 ,
wherein each of the first conductor and the second conductor comprises tantalum and nitrogen, and
wherein the second insulator comprises aluminum and oxygen.

3. The semiconductor device according to claim 1 ,
wherein the first oxide comprises at least one of constituent elements included in the second oxide.

4. The semiconductor device according to claim 1 ,
wherein the second oxide has crystallinity.

5. A semiconductor device comprising:
a first insulator;
a first oxide over the first insulator;
a second oxide over the first oxide;
a third oxide and a fourth oxide over the second oxide;
a first conductor over the third oxide;
a second conductor over the fourth oxide;
a fifth oxide over the second oxide;
a second insulator over the fifth oxide;
a third conductor over the second insulator;
a third insulator over the first conductor and the second conductor; and
a fourth insulator over the third insulator,
wherein the fifth oxide is in contact with a top surface of the second oxide, a first side surface of the first conductor, a first side surface of the second conductor, a first side surface of the third oxide, a first side surface of the fourth oxide, and a side surface of the third insulator,
wherein the fifth oxide is in contact with an inner surface of an opening provided in the fourth insulator,
wherein the third conductor is provided to fill the opening,
wherein the second oxide comprises In, an element M and Zn, where the element M is Al, Ga, Y, or Sn,
wherein the first oxide comprise at least one of constituent elements included in the second oxide,
wherein the third oxide and the fourth oxide each comprise the element M,
wherein the third oxide and the fourth oxide each comprise a region having a concentration of the element M higher than a concentration of the element M in the second oxide, and
wherein the fifth oxide comprises aluminum.

6. The semiconductor device according to claim 5 ,
wherein each of the first conductor and the second conductor comprises tantalum and nitrogen, and
wherein the second insulator comprises aluminum and oxygen.

7. The semiconductor device according to claim 5 ,
wherein the third oxide and the fourth oxide each comprise a region having a thickness of greater than or equal to 0.5 nm and less than or equal to 5 nm.

8. The semiconductor device according to claim 5 ,
wherein the third oxide and the fourth oxide each comprise a region having a thickness of greater than or equal to 1 nm and less than or equal to 3 nm.

9. The semiconductor device according to claim 5 ,
wherein the third oxide and the fourth oxide each comprise gallium.

10. The semiconductor device according to claim 5 ,
wherein the third oxide and the fourth oxide each have crystallinity.

11. A transistor device comprising:
a first insulator;
a first oxide over the first insulator;
a second oxide over the first oxide;
a third oxide and a fourth oxide over the second oxide;
a first conductor over the third oxide;
a second conductor over the fourth oxide;
a fifth oxide over the second oxide;
a second insulator over the fifth oxide;
a third conductor over the second insulator;
a third insulator over the first conductor and the second conductor; and
a fourth insulator over the third insulator,
wherein the fifth oxide is in contact with a top surface of the second oxide, a first side surface of the first conductor, a first side surface of the second conductor, a first side surface of the third oxide, a first side surface of the fourth oxide, and a side surface of the third insulator,
wherein the fifth oxide is in contact with an inner surface of an opening provided in the fourth insulator,
wherein the third conductor is provided to fill the opening,
wherein the second oxide comprises In, an element M and Zn, where the element M is Al, Ga, Y, or Sn,
wherein the first oxide comprise at least one of constituent elements included in the second oxide,
wherein the third oxide and the fourth oxide each comprise the element M, and
wherein the third oxide and the fourth oxide each comprise a region having a concentration of the element M higher than a concentration of the element M in the second oxide, and
wherein a shift voltage change amount ΔVsh of the transistor is less than or equal to 100 mV after 550 hours of the +GBT stress test,
wherein a gate voltage of the +GBT stress test is set to 3.63V and a temperature of the +GBT stress test is set to 150° C.

12. The transistor according to claim 11 ,
wherein the shift voltage change amount ΔVsh of the transistor is less than or equal to 100 mV after 1100 hours of the +GBT stress test.

13. The transistor according to claim 11 ,
wherein each of the first conductor and the second conductor comprises tantalum and nitrogen, and
wherein the second insulator comprises aluminum and oxygen.

14. The transistor according to claim 11 ,
wherein the third oxide and the fourth oxide each comprise a region having a thickness of greater than or equal to 0.5 nm and less than or equal to 5 nm.

15. The transistor according to claim 11 ,
wherein the third oxide and the fourth oxide each comprise a region having a thickness of greater than or equal to 1 nm and less than or equal to 3 nm.

16. The transistor according to claim 11 ,
wherein the third oxide and the fourth oxide each comprise gallium.

17. The transistor according to claim 11 ,
wherein the third oxide and the fourth oxide each have crystallinity.

18. The transistor according to claim 11 ,
wherein the fifth oxide comprises aluminum.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Baba Haruyuki
• Okuno Naoki
• Komatsu Yoshihiro
• Ohno Toshikazu

Classifications

• H10D62/405

  Orientations of crystalline planes · CPC title

• H10D30/6757

  characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715) · CPC title

• H10D30/6734

  having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs · CPC title

• H10D62/80

  characterised by the materials · CPC title

• H10D30/6755 Primary

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title