Substrate treatment apparatus and substrate treatment method
US-2017162400-A1 · Jun 8, 2017 · US
US11955352B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11955352-B2 |
| Application number | US-202117141670-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 5, 2021 |
| Priority date | Jan 7, 2020 |
| Publication date | Apr 9, 2024 |
| Grant date | Apr 9, 2024 |
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A substrate processing apparatus includes: a temperature raising part for raising a temperature of a first sulfuric acid; a mixing part for mixing the first sulfuric acid where the temperature is raised by the temperature raising part with a moisture-containing liquid to generate a mixed solution; and a discharging part for discharging the mixed solution onto a substrate inside a substrate processing part. The mixing part includes: a joining portion where a sulfuric acid supply line through which the first sulfuric acid where the temperature is raised by the temperature raising part flows and a liquid supply line through which the first sulfuric acid where the temperature is raised by the temperature raising part and the moisture-containing liquid flows are joined; and a reaction suppression mechanism for suppressing a reaction between the first sulfuric acid and the moisture-containing liquid in the joining portion.
Opening claim text (preview).
What is claimed is: 1. A substrate processing apparatus, comprising: a heater configured to raise a temperature of a sulfuric acid supplied from a sulfuric acid source; a sulfuric acid supply line configured to supply the sulfuric acid, whose temperature has been raised by the heater, to a mixing part; a liquid supply line configured to supply a moisture-containing liquid from a moisture-containing liquid source to the mixing part; the mixing part configured to mix the sulfuric acid from the sulfuric acid supply line with the moisture-containing liquid from the liquid supply line to generate a mixed solution; and a nozzle configured to discharge the mixed solution onto a substrate inside a substrate processing part, wherein the mixing part includes: a joining portion where the sulfuric acid supply line and the liquid supply line are joined; and a reaction suppression mechanism including a U-shaped pipe buffer portion, which is provided in the liquid supply line, and configured to suppress a reaction between the sulfuric acid, whose temperature has been raised by the heater, and the moisture-containing liquid in the joining portion, and wherein the U-shaped pipe buffer portion has an uppermost portion provided at a position higher than the joining portion. 2. The substrate processing apparatus of claim 1 , wherein the uppermost portion of the U-shaped pipe buffer portion is provided at the position higher than the joining portion by a diameter or more of the liquid supply line in the joining portion. 3. The substrate processing apparatus of claim 1 , wherein the U-shaped pipe buffer portion is spaced apart from a mixed-solution supply line, which supplies the mixed solution from the joining portion to the nozzle, by a diameter or more of the mixed-solution supply line in the joining portion. 4. The substrate processing apparatus of claim 1 , wherein the moisture-containing liquid is a pure water. 5. The substrate processing apparatus of claim 1 , wherein the moisture-containing liquid includes a hydrogen peroxide solution. 6. The substrate processing apparatus of claim 1 , wherein the moisture-containing liquid includes a functional water.
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