High-power die heat sink

Patent metadata

Field	Value
Publication number	US-11948853-B2
Application number	US-202117313380-A
Country	US
Kind code	B2
Filing date	May 6, 2021
Priority date	May 6, 2021
Publication date	Apr 2, 2024
Grant date	Apr 2, 2024

Abstract

Disclosed are apparatuses and methods for fabricating the apparatuses. In one aspect, an apparatus includes a high-power die mounted on a backside of a package substrate. A heat transfer layer is disposed on the backside of the high-power die. A plurality of heat sink interconnects is coupled to the heat transfer layer. The plurality of heat sink interconnects is located adjacent the high-power die in a horizontal direction.

First claim

What is claimed is:

1. An apparatus comprising:
a high-power die mounted on a backside of a package substrate;
a heat transfer layer disposed on the backside of the high-power die; and
a plurality of heat sink interconnects coupled to the heat transfer layer, wherein the plurality of heat sink interconnects is located adjacent the high-power die in a horizontal direction.

2. The apparatus of claim 1 , wherein the high-power die is an acoustic wave die or a power amplifier.

3. The apparatus of claim 1 , further comprising:
a heat spreader disposed in the package substrate, wherein the heat spreader is coupled to a plurality of frontside contacts of the high-power die.

4. The apparatus of claim 3 , wherein the heat spreader comprises a plurality of metal layers of the package substrate.

5. The apparatus of claim 3 , wherein the heat spreader is coupled to the plurality of heat sink interconnects or a plurality of signal interconnects coupled to ground.

6. The apparatus of claim 1 , wherein the plurality of heat sink interconnects is coupled to a ground.

7. The apparatus of claim 1 , wherein the high-power die further comprises:
a plurality of heat sink vias extending from the heat transfer layer into the high-power die.

8. The apparatus of claim 1 , further comprising:
at least one other die or surface mount device coupled to a front side of the package substrate, wherein the at least one other die or surface mount device is electrically coupled to the high-power die through the package substrate.

9. The apparatus of claim 1 , wherein the high-power die has a power dissipation rating of at least 0.25 Watts.

10. The apparatus of claim 1 , wherein the apparatus is selected from the group consisting of a music player, a video player, an entertainment unit, a navigation device, a communications device, a mobile device, a mobile phone, a smartphone, a personal digital assistant, a fixed location terminal, a tablet computer, a computer, a wearable device, an Internet of things (IoT) device, a laptop computer, a server, access point, base station, small cell device and a device in an automotive vehicle.

11. The apparatus of claim 1 , wherein the plurality of heat sink interconnects is distributed around a perimeter of the high-power die.

12. The apparatus of claim 1 , wherein at least one of the plurality of heat sink interconnects is located on each side of the high-power die.

13. The apparatus of claim 12 , further comprising:
a plurality of signal interconnects located adjacent the high-power die in a horizontal direction, wherein at least one of the plurality of signal interconnects is located adjacent to at least one of the plurality of heat sink interconnects.

14. The apparatus of claim 1 , further comprising:
a heat sink plate disposed directly on the die and coupled to the heat transfer layer.

15. The apparatus of claim 14 , wherein the heat sink plate is at least one of silver, copper, gold, aluminum, titanium, nickel, alloys or stacked combinations thereof.

16. The apparatus of claim 1 , wherein the heat transfer layer is formed from a silver paste.

17. The apparatus of claim 16 , wherein each of the plurality of heat sink interconnects comprise:
a metal pillar having a recessed portion, wherein the heat transfer layer is coupled to the recessed portion of the metal pillar; and
a solder portion coupled to metal pillar.

18. The apparatus of claim 17 , wherein the metal pillar is copper.

19. The apparatus of claim 16 , further comprising:
a mold compound encapsulating the high-power die and a portion of each of the plurality of heat sink interconnects,
wherein a backside of the heat transfer layer is exposed from the mold compound.

20. The apparatus of claim 1 , wherein the heat transfer layer is formed from metal plating.

21. The apparatus of claim 20 , wherein each of the plurality of heat sink interconnects comprise:
a metal pillar;
a portion of the heat transfer layer coupled to the metal pillar; and
a solder portion coupled to the portion of the heat transfer layer.

22. The apparatus of claim 21 , wherein the metal pillar is copper, and the heat transfer layer is copper.

23. The apparatus of claim 20 , further comprising:
a mold compound encapsulating the high-power die and a portion of each of the plurality of heat sink interconnects,
wherein the heat transfer layer is disposed on the mold compound.

24. The apparatus of claim 23 , wherein a backside of the heat transfer layer is covered by a solder resist.

25. The apparatus of claim 17 , wherein the recessed portion of the metal pillar has a smaller cross-sectional area than a remaining portion of the metal pillar.

26. The apparatus of claim 17 , wherein the recessed portion of the metal pillar is recessed from a side facing the high-power die.

27. The apparatus of claim 1 , wherein each of the plurality of heat sink interconnects comprise:
a metal pillar; and
a solder portion directly coupled to the metal pillar.

28. The apparatus of claim 16 , further comprising:
a mold compound encapsulating the high-power die and a portion of each of the plurality of heat sink interconnects,
wherein a backside of the heat transfer layer is exposed outside of the package substrate.

Assignees

• Qualcomm Technologies Inc
• RF360 Europe GmbH
• Qualcomm Tech Incorporated

Inventors

• Moreira Jose
• Valtere Markus
• Portmann Juergen
• Bielen Jeroen

Classifications

• H10W72/07236

  Soldering or alloying · CPC title

• H10W70/60

  Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40) · CPC title

• H10W74/10

  characterised by their shape or disposition · CPC title

• H10W74/01

  Manufacture or treatment · CPC title

• H10W40/258

  Metallic materials (H10W40/254, H10W40/257, H10W40/255, H10W40/251, H10W40/253 take precedence) · CPC title