Method and apparatus for producing AlN whiskers, AlN whisker bodies, AlN whiskers, resin molded body, and method for producing resin molded body

US11939267B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11939267-B2
Application numberUS-202217734416-A
CountryUS
Kind codeB2
Filing dateMay 2, 2022
Priority dateMar 17, 2017
Publication dateMar 26, 2024
Grant dateMar 26, 2024

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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A method and apparatus for producing AlN whiskers includes reduced incorporation of metal particles, an AlN whisker body, AlN whiskers, a resin molded body, and a method for producing the resin molded body. The method for producing AlN whiskers includes heating an Al-containing material in a material accommodation unit to thereby generate Al gas; and introducing the Al gas into a reaction chamber through a communication portion while introducing nitrogen gas into the reaction chamber through a gas inlet port, to thereby grow AlN whiskers on the surface of an Al 2 O 3 substrate placed in the reaction chamber.

First claim

Opening claim text (preview).

The invention claimed is: 1. An AlN whisker body comprising a carbon substrate, an AlN polycrystal or AlN particle formed on the surface of the carbon substrate, and an AlN whisker bonded to the surface of the AlN polycrystal or the AlN particle. 2. An AlN whisker comprising a fibrous AlN single crystal, an oxygen atom-containing layer covering the AlN single crystal, and a hydrophobic layer covering the oxygen atom-containing layer, wherein the oxygen atom-containing layer is formed through incorporation of at least oxygen atoms into the AlN single crystal, and the hydrophobic layer comprises a hydrocarbon group. 3. An AlN whisker according to claim 2 , wherein the oxygen atom-containing layer is bonded to the hydrophobic layer by means of an ester bond. 4. An AlN whisker according to claim 2 , wherein the oxygen atom-containing layer comprises at least one of Al 2 O 3 , AlON, and Al(OH) 3 . 5. An AlN whisker according to claim 2 , wherein the oxygen atom-containing layer has a thickness of 7 nm to 500 nm. 6. A resin molded body comprising an AlN whisker having a first end and a second end, and a resin material covering the AlN whisker; wherein the resin molded body comprises a first surface and a second surface opposite the first surface; the first end of the AlN whisker is exposed at the first surface, and the second end of the AlN whisker is exposed at the second surface, wherein the AlN whisker comprises a fibrous AlN single crystal, an oxygen atom-containing layer covering the AlN single crystal, and a hydrophobic layer covering the oxygen atom-containing layer; the oxygen atom-containing layer is formed through incorporation of at least oxygen atoms by the AlN single crystal; and the hydrophobic layer comprises a hydrocarbon group. 7. A resin molded body, comprising an insulating particle, a plurality of AlN whiskers covering the insulating particle, and a resin covering the AlN whiskers, wherein the AlN whisker comprises a fibrous AlN single crystal, an oxygen atom-containing layer covering the AlN single crystal, and a hydrophobic layer covering the oxygen atom-containing layer; the oxygen atom-containing layer is formed through incorporation of at least oxygen atoms into the AlN single crystal; and the hydrophobic layer comprises a hydrocarbon group. 8. A sintered body comprising: an AlN whisker comprising a fibrous AlN single crystal and an oxygen atom-containing layer covering the AlN single crystal, and one or more species of insulating particles covering the AlN whisker, wherein the oxygen atom-containing layer is formed through incorporation of at least oxygen atoms into the AlN single crystal. 9. A sintered body according to claim 8 , wherein the oxygen atom-containing layer has a thickness of 7 nm to 500 nm. 10. A sintered body according to claim 8 , wherein the oxygen atom-containing layer comprises at least one of Al 2 O 3 , AlON, and Al(OH) 3 . 11. A sintered body according to claim 8 , wherein the one or more species of insulating particles comprise AlN polycrystalline particles.

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What does patent US11939267B2 cover?
A method and apparatus for producing AlN whiskers includes reduced incorporation of metal particles, an AlN whisker body, AlN whiskers, a resin molded body, and a method for producing the resin molded body. The method for producing AlN whiskers includes heating an Al-containing material in a material accommodation unit to thereby generate Al gas; and introducing the Al gas into a reaction chamb…
Who is the assignee on this patent?
Univ Nagoya Nat Univ Corp
What technology area does this patent fall under?
Primary CPC classification C04B35/581. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Mar 26 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).