Method for treating copper-containing waste etching solution

Patent metadata

Field	Value
Publication number	US-11939229-B2
Application number	US-202217990441-A
Country	US
Kind code	B2
Filing date	Nov 18, 2022
Priority date	Nov 30, 2021
Publication date	Mar 26, 2024
Grant date	Mar 26, 2024

Abstract

The present invention provides a method for treating a copper-containing waste etching solution, which includes: preparing basic copper chloride nanometer seed crystals and synthesizing basic copper chloride mono-crystals; making an acidic waste etching solution subjected to agglomeration reaction with an ammonium-containing solution and slurry containing the basic copper chloride mono-crystals to obtain basic copper chloride crystal particles and copper-removed waste solution; making an alkaline waste etching solution react with sulfuric acid to obtain a copper sulfate mixed solution; and then evaporating, concentrating, cooling and crystallizing the copper sulfate mixed solution obtained by the reaction of the alkaline waste etching solution and the sulfuric acid in sequence to obtain copper sulfate pentahydrate solids. In a case of low investment, the present invention not only can realize the recycling of copper in the copper-containing waste etching solution, but also can obtain various high-value products, and can achieve both environmental and economic benefits.

First claim

What is claimed is:

1. A method for treating a copper-containing waste etching solution, comprising steps:
S1, preparing an inducer containing basic copper chloride nanometer seed crystals: mixing and curing a copper chloride solution and an ammonia solution in a sequence to obtain the inducer containing the basic copper chloride nanometer seed crystals;
wherein a mixing temperature is 0-45° C., a mixing stirring speed is 750-1000 r/min, a concentration of copper ions in the copper chloride solution used in the mixing is 200-350 g/L, and an initial pH of the mixing is 1.0-3.0; a curing temperature is 35-60° C., and a curing duration is 8-48 h;
S2, preparing a slurry containing basic copper chloride mono-crystals: making the inducer react with the copper chloride solution and the ammonia solution to obtain the slurry containing the basic copper chloride mono-crystals;
wherein a concentration of copper ions in the copper chloride solution used in an induced reaction is 25-75 g/L, an induced reaction temperature is 45-75° C., an initial pH of the induced reaction is 2.5-3.5, and a stirring speed of the induced reaction is 20-120 r/min;
S3, classifying the copper-containing waste etching solution for treatment: collecting a to-be-treated copper-containing waste etching solution, and classifying the copper-containing waste etching solution into an acidic waste etching solution and an alkaline waste etching solution;
S4, making the acidic waste etching solution to be subjected to an agglomeration reaction with an ammonium-containing solution and the slurry containing the basic copper chloride mono-crystals to obtain basic copper chloride crystal particles and a copper-removed waste solution;
wherein an agglomeration reaction temperature is 80-100° C., an initial pH of the agglomeration reaction is 3.5-4.5, and a stirring speed of the agglomeration reaction is 150-300 r/min; and
S5, making the alkaline waste etching solution react with sulfuric acid to obtain a copper sulfate mixed solution; and then evaporating, concentrating, cooling and crystallizing the copper sulfate mixed solution obtained by the reaction of the alkaline waste etching solution and the sulfuric acid to obtain copper sulfate pentahydrate solids.

2. The method according to claim 1 , wherein in the step S3, the acidic waste etching solution is classified into a low-impurity acidic waste etching solution and a high-impurity acidic waste etching solution, and the alkaline waste etching solution is classified into a low-impurity alkaline waste etching solution and a high-impurity alkaline waste etching solution;
wherein the low-impurity acidic waste etching solution is an acidic waste etching solution with an iron concentration less than 25 ppm, an aluminum concentration less than 5 ppm and an arsenic concentration less than 0.5 ppm; the high-impurity acidic waste etching solution is an acid waste etching solution satisfying one or more of the iron concentration greater than or equal to 25 ppm, the aluminum concentration greater than or equal to 5 ppm and the arsenic concentration greater than or equal to 0.5 ppm; the low-impurity alkaline waste etching solution is an alkaline waste etching solution with the iron concentration less than 25 ppm, the aluminum concentration less than 5 ppm and the arsenic concentration less than 0.5 ppm; and the high-impurity alkaline waste etching solution is an alkaline waste etching solution satisfying one or more of the iron concentration greater than or equal to 25 ppm, the aluminum concentration greater than or equal to 5 ppm and the arsenic concentration greater than or equal to 0.5 ppm;
in the step S4, when the acidic waste etching solution is the low-impurity acidic waste etching solution, the ammonium-containing solution reacting with the low-impurity acidic waste etching solution comprises the low-impurity alkaline waste etching solution; and when the acidic waste etching solution is the high-impurity acidic waste etching solution, the ammonium-containing solution reacting with the high-impurity acidic waste etching solution comprises the ammonia solution; and
in the step S5, the alkaline waste etching solution is the high-impurity alkaline waste etching solution.

3. The method according to claim 2 , wherein when the acidic waste etching solution is the low-impurity acidic waste etching solution, the step S4 comprises adding the low-impurity acidic waste etching solution and the low-impurity alkaline waste etching solution in a parallel-flow manner into the slurry containing the basic copper chloride mono-crystals fora first agglomeration reaction to obtain the basic copper chloride crystal particles and the copper-removed waste solution; and
then filtering, washing and drying the basic copper chloride crystal particles obtained by the first agglomeration reaction in the sequence to obtain basic copper chloride solids.

4. The method according to claim 3 , wherein the step S4 also comprises:
adding the ammonia solution into the basic copper chloride solids for alkaline dissolution to obtain copper hydroxide precipitates and an ammonium cupric chloride solution;
refluxing the ammonium cupric chloride solution into the low-impurity alkaline waste etching solution to take part in the first agglomeration reaction as the ammonium-containing solution together with the low-impurity alkaline waste etching solution; and
making the copper hydroxide precipitates react with sulfuric acid to obtain a copper sulfate mixed solution; and then evaporating, concentrating, cooling and crystallizing the copper sulfate mixed solution obtained by the reaction of the copper hydroxide precipitates and the sulfuric acid to obtain copper sulfate pentahydrate solids.

5. The method according to claim 2 , wherein when the acidic waste etching solution is the high-impurity acidic etching solution, the step S4 comprises:
removing impurities from the high-impurity acidic waste etching solution;
adding the ammonia solution and the high-impurity acidic waste etching solution after an impurity removal treatment in a parallel-flow manner into the slurry containing the basic copper chloride mono-crystals for a second agglomeration reaction to obtain the basic copper chloride crystal particles and the copper-removed waste solution, wherein a concentration of the ammonia solution added with the high-impurity acidic waste etching solution is 10 wt %-20 wt %; and
then filtering, washing and drying the basic copper chloride crystal particles obtained by the second agglomeration reaction in the sequence to obtain basic copper chloride solids.

6. The method according to claim 5 , wherein an oxidant is used for removing the impurities from the high-impurity acidic waste etching solution.

7. The method according to claim 5 , wherein the step S4 also comprises: collecting a mixed solution of the basic copper chloride crystal particles and the copper-removed waste solution, and making the mixed solution of the basic copper chloride crystal particles and the copper-removed waste solution react with the ammonia solution and sulfuric acid in the sequence to obtain copper sulfate mixed solutions; and then evaporating, concentrating, cooling and crystallizing the copper sulfate mixed solutions obtained by reactions of the mixed solution of the basic copper chloride crystal particles and the copper-removed waste solution and the ammonia solution and the sulfuric acid in the sequence to obtain the copper sulfate pentahydrate solids.

8. The method according to claim 2 , wherein when the alkaline waste etching solution is the high-impurity alkaline waste etching solution, the step S5 also comprises: prior to the reaction between the high-impurity alkaline waste etching solution and the sulfuric acid, detoxi

Assignees

• Univ Central South

Inventors

• Lin Zhang
• Yan Xu
• Liu Xueming
• Meng Fandongkun
• Liang Yanjie

Classifications

• C01G3/10 Primary

  Sulfates · CPC title

• C02F9/00

  Multistage treatment of water, waste water or sewage · CPC title

• C01P2004/03

  obtained by SEM · CPC title

• C02F1/5236 Primary

  using inorganic agents · CPC title

• C02F1/66

  by neutralisation; pH adjustment (for degassing C02F1/20; using ion-exchange C02F1/42; for flocculation or precipitation of suspended impurities C02F1/52; for removing dissolved compounds C02F1/58) · CPC title