Remote communication and powered sensing/control/identification devices using high temperature compatible semiconductor materials

Patent metadata

Field	Value
Publication number	US-11937031-B2
Application number	US-202117371315-A
Country	US
Kind code	B2
Filing date	Jul 9, 2021
Priority date	Feb 28, 2014
Publication date	Mar 19, 2024
Grant date	Mar 19, 2024

Abstract

A system includes a network of a plurality of sensing/control/identification devices distributed throughout a machine, each of the sensing/control/identification devices associated with at least one sub-system component of the machine and operable to communicate through a plurality of electromagnetic signals. Shielding surrounds at least one of the sensing/control/identification devices to contain the electromagnetic signals proximate to the at least one sub-system component. A communication path is integrally formed in a component of the machine to route a portion of the electromagnetic signals through the component and a remote processing unit operable to communicate with the network of the sensing/control/identification devices through the electromagnetic signals, wherein at least a portion of the sensing/control/identification devices comprise a wide band gap semiconductor device and wherein at least a portion of the sensing/control/identification devices comprise an on-chip antenna.

First claim

What is claimed is:

1. A system of a machine, the system comprising:
a network of a plurality of sensing/control/identification devices distributed throughout the machine, each of the sensing/control/identification devices associated with at least one sub-system component of the machine and operable to communicate through a plurality of electromagnetic signals;
shielding within or around at least one of the sensing/control/identification devices to contain the electromagnetic signals proximate to the at least one sub-system component;
a communication path integrally formed in a component of the machine to route a portion of the electromagnetic signals through the component; and
a remote processing unit operable to communicate with the network of the sensing/control/identification devices through the electromagnetic signals, wherein at least a portion of the sensing/control/identification devices comprise a wide band gap semiconductor device.

2. The system as recited in claim 1 , wherein the wide band gap semiconductor device comprises silicon on insulator (SOI), silicon carbide (SiC), gallium nitride (GaN), boron nitride, aluminum nitride, or a combination comprising at least one of the foregoing.

3. The system as recited in claim 1 , wherein the wide band gap semiconductor device operates at a temperature greater than 200 degrees C.

4. The system as recited in claim 1 , wherein the wide band gap semiconductor device comprises an integrated device having bipolar junction transistors, field effect transistors, or a combination comprising at least one of the foregoing.

5. The system as recited in claim 1 , wherein the wide band gap semiconductor device comprises a bipolar structure, MOSFET, JFET, light emitting diode, oscillator, diode or a combination comprising at least one of the foregoing.

6. The system as recited in claim 1 , wherein the wide band gap semiconductor device is part of an integrated circuit.

7. The system as recited in claim 1 , wherein the communication path formed in the component of the machine comprises a waveguide.

8. A system for a gas turbine engine, the system comprising:
a network of a plurality of sensing/control/identification devices distributed throughout the gas turbine engine, each of the sensing/control/identification devices associated with at least one sub-system component of the gas turbine engine and operable to communicate through a plurality of electromagnetic signals;
shielding within or around at least one of the sensing/control/identification devices to contain the electromagnetic signals proximate to the at least one sub-system component;
a communication path integrally formed in a component of the gas turbine engine to route a portion of the electromagnetic signals through the component; and
a remote processing unit operable to communicate with the network of the sensing/control/identification devices through the electromagnetic signals, wherein at least a portion of the sensing/control/identification devices comprise a wide band gap semiconductor device.

9. The system as recited in claim 8 , wherein the wide band gap semiconductor device comprises silicon on insulator (SOI), silicon carbide (SiC) or gallium nitride (GaN), boron nitride, aluminum nitride, or a combination comprising at least one of the foregoing.

10. The system as recited in claim 8 , wherein the wide band gap semiconductor device operates at a temperature greater than 200 degrees C.

11. The system as recited in claim 8 , wherein the wide band gap semiconductor device comprises an integrated device having bipolar junction transistors, field effect transistors, or a combination comprising at least one of the foregoing.

12. The system as recited in claim 8 , wherein the wide band gap semiconductor device comprises a bipolar structure, MOSFET, JFET, light emitting diode, oscillator, diode or a combination comprising at least one of the foregoing.

13. The system as recited in claim 8 , wherein the wide band gap semiconductor device is part of an integrated circuit.

14. The system as recited in claim 8 , wherein the communication path formed in the component of the gas turbine engine comprises a waveguide.

15. A method of electromagnetic communication through a machine, the method comprising:
transmitting communication signals between a remote processing unit and a network of a plurality of control/sensing/identification devices in the machine using a plurality of electromagnetic signals wherein the plurality of electromagnetic signals pass through a waveguide integral to a component of the machine and provide power to the control/sensing devices and further wherein the at least a portion of the control/sensing/identification devices comprise a wide band gap semiconductor device.

16. The method as recited in claim 15 , wherein the wide band gap semiconductor device comprises silicon on insulator (SOI), silicon carbide (SiC), gallium nitride (GaN), boron nitride, aluminum nitride, or a combination comprising at least one of the foregoing.

17. The method as recited in claim 15 , wherein the wide band gap semiconductor device operates at a temperature greater than 200 degrees C.

18. The method as recited in claim 15 , wherein the wide band gap semiconductor device comprises an integrated device having bipolar junction transistors, field effect transistors, or a combination comprising at least one of the foregoing.

19. The method as recited in claim 15 , wherein the wide band gap semiconductor device is part of an integrated circuit.

20. The method as recited in claim 19 , wherein the wide band gap semiconductor device comprises silicon carbide (SiC), gallium nitride (GaN) or a combination thereof.

Assignees

• Rtx Corp

Inventors

• Mantese Joseph V
• Sobanski Kurt J

Classifications

• H04Q9/00 Primary

  Arrangements in telecontrol or telemetry systems for selectively calling a substation from a main station, in which substation desired apparatus is selected for applying a control signal thereto or for obtaining measured values therefrom · CPC title

• F01D21/003

  Arrangements for testing or measuring (for measuring vibrations G01H) · CPC title

• F02C3/04

  having a turbine driving a compressor (power transmission arrangements F02C7/36; control of working fluid flow F02C9/16) · CPC title

• F02C9/00

  Controlling gas-turbine plants; Controlling fuel supply in air- breathing jet-propulsion plants (controlling air intakes F02C7/057; controlling turbines F01D; controlling compressors F04D27/00; controlling in general G05) · CPC title

• F02K3/04

  the plant including ducted fans, i.e. fans with high volume, low pressure outputs, for augmenting the jet thrust, e.g. of double-flow type · CPC title