Semiconductor light-emitting device with groove and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-11935910-B2
Application number	US-202017027960-A
Country	US
Kind code	B2
Filing date	Sep 22, 2020
Priority date	Feb 12, 2020
Publication date	Mar 19, 2024
Grant date	Mar 19, 2024

Abstract

Provided is a semiconductor light-emitting device including a substrate, a first insulating layer disposed on an upper surface of the substrate, a plurality of light-emitting structures disposed on the first insulating layer and spaced apart from each other, each of the plurality of light-emitting structures including a first semiconductor layer, an active layer, and a second semiconductor layer, a plurality of optical layers each filling a groove that is formed at a certain depth in the second semiconductor layer, a plurality of first electrodes penetrating the substrate and electrically connected to the first semiconductor layer, a plurality of second insulating layers disposed on side surfaces of each of the plurality of light-emitting structures, respectively, and a second electrode connected to the plurality of light-emitting structures, the second electrode being disposed on an uppermost surface of the second semiconductor layer and each of the plurality of second insulating layers.

First claim

What is claimed is:

1. A semiconductor light-emitting device comprising:
a substrate having an upper surface and a lower surface;
a first insulating layer disposed on the upper surface of the substrate;
a plurality of light-emitting structures disposed on the first insulating layer and spaced apart from each other, each of the plurality of light-emitting structures comprising a first semiconductor layer, an active layer, and a second semiconductor layer;
a plurality of optical layers, each filling a groove that is formed in an upper surface of the second semiconductor layer of each of the plurality of light-emitting structures;
a plurality of first electrodes penetrating the substrate and electrically connected to the first semiconductor layer of each of the plurality of light-emitting structures, respectively;
a plurality of second insulating layers disposed on side surfaces of each of the plurality of light-emitting structures, respectively; and
a second electrode connected to the plurality of light-emitting structures, the second electrode being disposed on the second semiconductor layer of each of the plurality of light-emitting structures and each of the plurality of second insulating layers,
wherein, in a plan view, a planar area of each of the plurality of optical layers is less than a planar area of each corresponding first electrode, and
wherein, in a side cross-sectional view, a maximum width of the first semiconductor layer is less than a maximum width of each corresponding first electrode.

2. The semiconductor light-emitting device of claim 1 , wherein an uppermost surface of the second semiconductor layer of each of the plurality of light-emitting structures contacts the second electrode and is electrically connected to the second electrode, and
wherein a level of an uppermost surface of the second electrode is same as a level of an uppermost surface of each of the plurality of optical layers.

3. The semiconductor light-emitting device of claim 1 , wherein the second semiconductor layer of each of the plurality of light-emitting structures has a protrusion structure surrounding the groove, and
wherein the protrusion structure has an increasing width toward the substrate.

4. The semiconductor light-emitting device of claim 3 , wherein, in a side cross-sectional view, each of the plurality of optical layers has a reversed trapezoidal shape.

5. The semiconductor light-emitting device of claim 1 , wherein the second electrode and each of the plurality of first electrodes comprise a reflective electrode or a transparent electrode.

6. The semiconductor light-emitting device of claim 1 , wherein each of the plurality of second insulating layers is disposed between the second semiconductor layer and each of the plurality of optical layers.

7. The semiconductor light-emitting device of claim 6 , wherein each of the plurality of optical layers contacts the second electrode and each of the plurality of second insulating layers.

8. The semiconductor light-emitting device of claim 1 , wherein each of the plurality of optical layers contacts the second semiconductor layer.

9. The semiconductor light-emitting device of claim 1 , wherein each of the plurality of optical layers comprises:
a material configured to convert a wavelength of light emitted from each of the plurality of light-emitting structures into a different wavelength; or
a transparent material configured to transmit light emitted from each of the plurality of light-emitting structures.

10. The semiconductor light-emitting device of claim 1 , wherein the first semiconductor layer comprises a semiconductor layer doped with p-type impurities, and
wherein the second semiconductor layer comprises a semiconductor layer doped with n-type impurities.

11. The semiconductor light-emitting device of claim 1 , wherein a portion of the second electrode penetrates the substrate, and
wherein the second electrode and each of the plurality of first electrodes are partially exposed at the lower surface of the substrate.

12. The semiconductor light-emitting device of claim 1 , further comprising a transparent protective layer disposed on an upper surface of each of the plurality of optical layers.

13. The semiconductor light-emitting device of claim 1 , further comprising a transparent protective layer disposed on the second electrode and all of the plurality of optical layers.

14. A semiconductor light-emitting device comprising:
a substrate having an upper surface and a lower surface;
a first insulating layer disposed on the upper surface of the substrate;
3N light-emitting structures disposed on the first insulating layer and spaced apart from each other, where N is an integer of 2 or more, each of the 3N light-emitting structures comprising a first semiconductor layer, an active layer, and a second semiconductor layer;
3N optical layers each filling a groove that is formed at a certain depth in the second semiconductor layer of each of the 3N light-emitting structure;
3N first electrodes penetrating the substrate and electrically connected to the first semiconductor layer of each of the 3N light-emitting structures, respectively;
a plurality of second insulating layers disposed on side surfaces of each of the 3N light-emitting structures, respectively; and
a second electrode connected to the 3N light-emitting structures, the second electrode being disposed on an uppermost surface of the second semiconductor layer of each of the 3N light-emitting structures and each of the plurality of second insulating layers,
wherein the second electrode comprises an upper portion disposed on the first insulating layer and a lower portion penetrating the substrate and connected to the upper portion,
wherein the lower portion of the second electrode is disposed between adjacent light emitting structures among the 3N light-emitting structures or disposed outside of the 3N light-emitting structures,
wherein every three light-emitting structures of the 3N light-emitting structures are included in one pixel such that the 3N light-emitting structures form an array of N pixels,
wherein, for each pixel of the array of N pixels, the three light-emitting structures included in the pixel respectively correspond to sub-pixels included in the pixel, and
wherein, for each pixel of the array of pixels, the 3N optical layers included in the pixel comprise materials configured to emit light emitted from a corresponding light-emitting structure as red light, green light, and blue light.

15. The semiconductor light-emitting device of claim 14 , wherein the lower portion of the second electrode is provided as a common electrode of the array of N pixels.

16. The semiconductor light-emitting device of claim 14 , wherein an uppermost surface of the second semiconductor layer of each of the 3N light-emitting structures is connected to the second electrode, and
wherein a level of an uppermost surface of the second electrode is same as levels of uppermost surfaces of the 3N optical layers.

17. A semiconductor light-emitting device comprising:
a substrate having an upper surface and a lower surface;
a first insulating layer disposed on the upper surface of the substrate;
a first light-emitting structure, a second light-emitting structure, and a third light-emitting structure disposed on the first insulating layer and spaced from each other, each of the first light-emitting structure, the second light-emitting structure, and the third light-emitting structure comprising a first semiconductor layer, an active layer, and a second semicon

Assignees

• Samsung Electronics Co Ltd

Inventors

• Yang Jongin
• Kim Joosung
• Lee Donggun
• Jo Suhyun

Classifications

• H10W90/00

  Package configurations · CPC title

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title

• H10H20/8506

  Containers · CPC title

• H10H20/833

  Transparent materials · CPC title

• H10H20/835

  Reflective materials · CPC title