Semiconductor light-emitting device and method of manufacturing semiconductor light-emitting device

Patent metadata

Field	Value
Publication number	US-11929591-B2
Application number	US-201916979606-A
Country	US
Kind code	B2
Filing date	Feb 15, 2019
Priority date	Mar 19, 2018
Publication date	Mar 12, 2024
Grant date	Mar 12, 2024

Abstract

A semiconductor light-emitting device includes a stacked body, a cutout section, and a high-resistance region. The stacked body includes a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer in this order and has paired side faces opposed to each other. The cutout section is provided on at least one of the paired side faces of the stacked body and has a bottom face where the first conductive-type semiconductor layer is exposed. The high-resistance region is provided from the vicinity of the bottom face of the cutout section to the side face of the stacked body and has electric resistance higher than the electric resistance of the stacked body in a periphery of the high-resistance region.

First claim

The invention claimed is:

1. A semiconductor light-emitting device, comprising:
a stacked body that includes a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer in this order, wherein the stacked body has paired side faces opposed to each other;
a cutout section that is on at least one of the paired side faces of the stacked body, wherein the cutout section has a bottom face where the first conductive-type semiconductor layer is exposed; and
a high-resistance region that is in vicinity of the bottom face of the cutout section and the side face of the stacked body, wherein the high-resistance region has electric resistance higher than electric resistance of the stacked body in a periphery of the high-resistance region.

2. The semiconductor light-emitting device according to claim 1 , wherein the cutout section is on both of the paired side faces.

3. The semiconductor light-emitting device according to claim 1 , further comprising a substrate opposed to the second conductive-type semiconductor layer with the first conductive-type semiconductor layer and the active layer in-between.

4. The semiconductor light-emitting device according to claim 1 , further comprising:
a support member that is opposed to the first conductive-type semiconductor layer with the active layer and the second conductive-type semiconductor layer in-between; and
a solder layer that is between the support member and the stacked body.

5. The semiconductor light-emitting device according to claim 4 , wherein the solder layer is between the support member and the stacked body and greater in width than the stacked body.

6. The semiconductor light-emitting device according to claim 1 , further comprising an insulting film that covers the cutout section.

7. The semiconductor light-emitting device according to claim 1 , wherein the semiconductor light-emitting device functions as a semiconductor laser.

8. The semiconductor light-emitting device according to claim 1 , wherein
a ridge portion is on the second conductive-type semiconductor layer, the ridge portion extending in a direction, and
the paired side faces are parallel to the direction in which the ridge portion extends.

9. The semiconductor light-emitting device according to claim 1 , comprising aluminum (Al), boron (B), or carbon (C) in the high-resistance region.

10. The semiconductor light-emitting device according to claim 1 , wherein the high-resistance region is in the first conductive-type semiconductor layer.

11. The semiconductor light-emitting device according to claim 1 , wherein the high-resistance region is in the first conductive-type semiconductor layer, the active layer, and the second conductive-type semiconductor layer.

12. A semiconductor light-emitting device, comprising:
a substrate;
a stacked body that is on the substrate, includes a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer in this order, wherein the stacked body has paired side faces opposed to each other;
a cutout section that is on at least one of the paired side faces of the stacked body and a side face of the substrate, wherein the cutout section has a bottom face where the substrate is exposed; and
a high-resistance region that is in vicinity of the bottom face of the cutout section, wherein the high-resistance region has electric resistance higher than electric resistance of the stacked body in a periphery of the high-resistance region.

13. A method of manufacturing a semiconductor light-emitting device, comprising:
forming a stacked body that includes a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer in this order;
forming a cutout section that has, on at least one side face of the stacked body, a bottom face where the first conductive-type semiconductor layer is exposed; and
forming a high-resistance region in vicinity of the bottom face of the cutout section and the side face of the stacked body, wherein the high-resistance region has electric resistance higher than electric resistance of the stacked body in a periphery of the high-resistance region.

14. The method of manufacturing the semiconductor light-emitting device according to claim 13 , wherein the high-resistance region is formed by performing ion injection on the bottom face of the cutout section.

15. The method of manufacturing the semiconductor light-emitting device according to claim 13 , further comprising:
disposing a support member opposed to the first conductive-type semiconductor layer with the active layer and the second conductive-type semiconductor layer in-between; and
joining the support member and the stacked body by means of a solder layer.

16. A method of manufacturing a semiconductor light-emitting device, comprising:
forming a stacked body that includes a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer in this order on a substrate;
forming a cutout section on at least one side face of the stacked body and a side face of the substrate, wherein the cutout section has a bottom face where the substrate is exposed; and
forming a high-resistance region in vicinity of the bottom face of the cutout section, wherein the high-resistance region has electric resistance higher than the electric resistance of the substrate in a periphery of the high-resistance region.

Assignees

• Sony Corp

Inventors

• Murayama Masahiro
• Sugiyama Takashi

Classifications

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title

• H10H20/0364

  of interconnections · CPC title

• H10H20/036

  of packages · CPC title

• H10H20/816

  having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures · CPC title

• H10H20/01

  Manufacture or treatment · CPC title