Light-emitting device
US-12155019-B2 · Nov 26, 2024 · US
US9040322B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9040322-B2 |
| Application number | US-201213601231-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 31, 2012 |
| Priority date | Dec 9, 2011 |
| Publication date | May 26, 2015 |
| Grant date | May 26, 2015 |
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Official abstract text for this publication.
According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting element. The method can include bonding a stacked main body of a structural body to a substrate main body. The structural body includes a growth substrate and the stacked main body provided on the growth substrate. The stacked main body includes a first nitride semiconductor film, a light emitting film provided on the first nitride semiconductor film, and a second nitride semiconductor film provided on the light emitting film. The method can include removing the growth substrate. The method can include forming a plurality of stacked bodies. The method can include forming an uneven portion in a surface of a first nitride semiconductor layer. The method can include forming a plurality of the semiconductor light emitting elements.
Opening claim text (preview).
What is claimed is: 1. A method for manufacturing a semiconductor light emitting element, comprising: bonding a stacked main body to a substrate main body, the stacked main body being included in a structural body, the structural body further including a growth substrate, the stacked main body being provided on the growth substrate, the stacked main body including a first nitride semiconductor film of a first conductivity type, a light emitting film provided on the first nitride s…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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