Sample support, method for producing sample support, ionization method and mass spectrometry method

US11929245B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11929245-B2
Application numberUS-202017439431-A
CountryUS
Kind codeB2
Filing dateJan 23, 2020
Priority dateMar 20, 2019
Publication dateMar 12, 2024
Grant dateMar 12, 2024

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

A sample support body for ionization of a sample, including: a substrate having a first surface, a second surface on a side opposite to the first surface, and a plurality of through-holes opening on each of the first surface and the second surface; a conductive layer provided on the first surface; and a matrix crystal layer provided on at least one of the conductive layer and the second surface, in which the matrix crystal layer is formed of a plurality of matrix crystal grains so as to include a gap communicating the plurality of through-holes with an outside.

First claim

Opening claim text (preview).

The invention claimed is: 1. A sample support body for ionization of a sample, comprising: a substrate having a first surface, a second surface on a side opposite to the first surface, and a plurality of through-holes opening on each of the first surface and the second surface; a conductive layer provided on the first surface; and a matrix crystal layer provided on at least one of the conductive layer and the second surface, wherein the matrix crystal layer is formed of a plurality of matrix crystal grains so as to include a gap communicating the plurality of through-holes with an outside. 2. The sample support body according to claim 1 , wherein a width of each of the plurality of through-holes is 1 to 700 nm, and wherein a thickness of the substrate is 1 to 50 μm. 3. The sample support body according to claim 1 , wherein the substrate is formed by anodizing a valve metal or silicon. 4. A sample support body for ionization of a sample, comprising: a conductive substrate having a first surface, a second surface on a side opposite to the first surface, and a plurality of through-holes opening on each of the first surface and the second surface; and a matrix crystal layer provided on at least one of the first surface and the second surface, wherein the matrix crystal layer is formed with a plurality of matrix crystal grains so as to include a gap communicating the plurality of through-holes with an outside. 5. A method for manufacturing a sample support body for ionization of a sample, comprising: a process of preparing a substrate having a first surface, a second surface on a side opposite to the first surface, and a plurality of through-holes opening on each of the first surface and the second surface and being provided with a conductive layer on the first surface; and a process of providing a matrix crystal layer on at least one of the conductive layer and the second surface by evaporation of a matrix material, wherein, in the process of providing the matrix crystal layer, the matrix crystal layer is formed with a plurality of matrix crystal grains so as to include a gap communicating the plurality of through-holes with an outside. 6. A method for manufacturing a sample support body for ionization of a sample, comprising: a process of preparing a conductive substrate having a first surface, a second surface on a side opposite to the first surface, and a plurality of through-holes opening on each of the first surface and the second surface; and a process of providing a matrix crystal layer on at least one of the first surface and the second surface by evaporation of a matrix material, wherein, in the process of providing the matrix crystal layer, the matrix crystal layer is formed with a plurality of matrix crystal grains so as to include a gap communicating the plurality of through-holes with an outside. 7. An ionization method, comprising: a process of preparing a substrate having a first surface, a second surface on a side opposite to the first surface, and a plurality of through-holes opening on each of the first surface and the second surface and being provided with a conductive layer on the first surface; a process of arranging a sample on a mount portion and arranging the substrate on the sample so that the second surface is in contact with the sample; a process of providing a matrix crystal layer on the conductive layer by evaporation of a matrix material; and a process of ionizing components of the sample having moved from the second surface side to the first surface side via the plurality of through-holes together with the matrix by irradiating the first surface with an energy beam while applying a voltage to the conductive layer in a state where the sample is arranged between the mount portion and the substrate, wherein, in the process of providing the matrix crystal layer, the matrix crystal layer is formed with a plurality of matrix crystal grains so as to include a gap communicating the plurality of through-holes with an outside. 8. An ionization method, comprising: a process of preparing a conductive substrate having a first surface, a second surface on a side opposite to the first surface, and a plurality of through-holes opening on each of the first surface and the second surface; a process of arranging a sample on a mount portion and arranging the substrate on the sample so that the second surface is in contact with the sample; a process of providing a matrix crystal layer on the first surface by evaporation of a matrix material; and a process of ionizing components of the sample having moved from the second surface side to the first surface side via the plurality of through-holes together with the matrix by irradiating the first surface with an energy beam while applying a voltage to the substrate in a state where the sample is arranged between the mount portion and the substrate, wherein, in the process of providing the matrix crystal layer, the matrix crystal layer is formed with a plurality of matrix crystal grains so as to include a gap communicating the plurality of through-holes with an outside. 9. A mass spectrometry method comprising: the processes provided by the ionization method according to claim 7 ; and a process of detecting the ionized components. 10. A mass spectrometry method comprising: the processes provided by the ionization method according to claim 8 ; and a process of detecting the ionized components.

Assignees

Inventors

Classifications

  • for laser desorption, e.g. matrix-assisted laser desorption/ionisation [MALDI] plates or surface enhanced laser desorption/ionisation [SELDI] plates · CPC title

  • and a beam of energy, e.g. laser enhanced ionisation · CPC title

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What does patent US11929245B2 cover?
A sample support body for ionization of a sample, including: a substrate having a first surface, a second surface on a side opposite to the first surface, and a plurality of through-holes opening on each of the first surface and the second surface; a conductive layer provided on the first surface; and a matrix crystal layer provided on at least one of the conductive layer and the second surface…
Who is the assignee on this patent?
Hamamatsu Photonics Kk
What technology area does this patent fall under?
Primary CPC classification H01J49/0418. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Mar 12 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).