Systems and methods for charged particle flooding to enhance voltage contrast defect signal

Patent metadata

Field	Value
Publication number	US-11929232-B2
Application number	US-202017026044-A
Country	US
Kind code	B2
Filing date	Sep 18, 2020
Priority date	Aug 2, 2017
Publication date	Mar 12, 2024
Grant date	Mar 12, 2024

Abstract

Systems and methods for implementing charged particle flooding in a charged particle beam apparatus are disclosed. According to certain embodiments, a charged particle beam system includes a charged particle source and a controller which controls the charged particle beam system to emit a charged particle beam in a first mode where the beam is defocused and a second mode where the beam is focused on a surface of a sample.

First claim

The invention claimed is:

1. A charged particle beam system comprising:
an adjustable gun aperture configured to provide different aperture sizes and allow a charged particle beam to pass therethrough;
an adjustable column aperture configured to provide different aperture sizes and allow the charged particle beam to pass therethrough; and
a controller configured to cause the charged particle beam system to perform operations comprising:
adjusting the adjustable gun aperture to a first aperture size configured to pass the charged particle beam at a first current level;
controlling the charged particle beam system in a first mode to defocus the charged particle beam and flood a region of a sample with charged particles of the charged particle beam, wherein the charged particle beam is incident on the sample at the first current level:
after flooding the region of the sample, adjusting the adjustable gun aperture to a second aperture size configured to pass the charged particle beam at a second current level, wherein the first current level is greater than the second current level;
adjusting the adjustable column aperture to a third aperture size configured to pass the charged particle beam at a third current level, wherein the second current level is greater than the third current level;
controlling the charged particle beam system in a second mode to focus the charged particle beam to a part of the region of the sample to inspect the part of the region of the sample, wherein the charged particle beam is incident on the sample at the third current level; and
moving the sample and repeating the operations above to inspect other regions of the sample.

2. The charged particle beam system of claim 1 , wherein the operations further comprise:
switching the charged particle beam system between the first mode and the second mode.

3. The charged particle beam system of claim 1 , wherein the first current level is greater than the second current level.

4. The charged particle beam system of claim 1 , wherein the operations further comprise focusing the charged particle beam in a region of the adjustable column aperture in the first mode.

5. The charged particle beam system of claim 4 , wherein the operations further comprise projecting the charged particle beam on the adjustable column aperture in the second mode.

6. The charged particle beam system of claim 1 , wherein each of the adjustable gun aperture and the adjustable column aperture comprises
an aperture plate having a plurality of apertures with different sizes.

7. The charged particle beam system of claim 1 , wherein the charged particle beam system is a scanning electron microscope and the charged particle beam is an electron beam.

8. The charged particle beam system of claim 6 , further comprising:
a mover configured to adjust a position of the aperture plate,
wherein the controller is configured to cause the mover to move the aperture plate so that a selected aperture is aligned with an optical axis of the charged particle beam.

9. A method comprising:
providing a charged particle beam through an adjustable gun aperture and an adjustable column aperture;
adjusting the adjustable gun aperture to a first aperture size configured to pass the charged particle beam at a first current level;
controlling a charged particle beam system in a first mode to defocus the charged particle beam and flood a region of a sample with charged particles of the charged particle beam, wherein the charged particle beam is incident on the sample at the first current level;
after flooding the region of the sample, adjusting the adjustable gun aperture to a second aperture size configured to pass the charged particle beam at a second current level, wherein the first current level is greater than the second current level;
adjusting the adjustable column aperture to a third aperture size configured to pass the charged particle beam at a third current level, wherein the second current level is greater than the third current level;
controlling the charged particle beam system in a second mode to focus the charged particle beam to a part of the region of the sample to inspect the part of the region of the sample, wherein the charged particle beam is incident on the sample at the third current level; and
moving the sample and repeating operations above to inspect other regions of the sample.

10. The method of claim 9 , further comprising:
forming a first spot on a surface of the sample at the first current level; and
forming a second spot on the surface of the sample at the third current level, wherein a spot size of the first spot is different from the second spot, and the first current level is greater than the third current level.

11. A non-transitory computer readable medium storing a set of instructions that are executable by one or more processors of a system to cause the system to perform operations comprising:
providing a charged particle beam through an adjustable gun aperture and an adjustable column aperture;
adjusting the adjustable gun aperture to a first aperture size configured to pass the charged particle beam at a first current level;
controlling a charged particle beam system in a first mode to defocus the charged particle beam and flood a region of a sample with charged particles of the charged particle beam, wherein the charged particle beam is incident on the sample at the first current level;
after flooding the region of the sample, adjusting the adjustable gun aperture to a second aperture size configured to pass the charged particle beam at a second current level, wherein the first current level is greater than the second current level;
adjusting the adjustable column aperture to a third aperture size configured to pass the charged particle beam at a third current level, wherein the second current level is greater than the third current level;
controlling the charged particle beam system in a second mode to focus the charged particle beam to a part of the region of the sample to inspect the part of the region of the sample, wherein the charged particle beam is incident on the sample at the third current level; and
moving the sample and repeating operations above to inspect other regions of the sample.

12. The non-transitory computer readable medium of claim 11 , wherein the operations further comprise:
forming a first spot on a surface of the sample at the first current level; and
forming a second spot on the surface of the sample at the third current level, wherein a spot size of the first spot is different from the second spot.

13. The non-transitory computer readable medium of claim 11 , wherein the operations further comprise:
focusing the charged particle beam in a region of the adjustable column aperture while performing charged particle flooding.

14. The non-transitory computer readable medium of claim 13 , the operations further comprise:
projecting the charged particle beam on the adjustable column aperture.

Assignees

• Asml Netherlands Bv

Inventors

• Zhang Frank Nan
• Chen Zhongwei
• Wang Yixiang
• Shen Ying Crystal

Classifications

• H01J37/265 Primary

  Controlling the tube; circuit arrangements adapted to a particular application not otherwise provided, e.g. bright-field-dark-field illumination · CPC title

• H01J37/045

  Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge · CPC title

• H01J37/266 Primary

  Measurement of magnetic or electric fields in the object; Lorentzmicroscopy (spot analysing H01J37/252; emission microscopes H01J37/285; reflecting microscopes H01J37/29) · CPC title

• H01J37/28

  with scanning beams {(H01J37/268, H01J37/292, H01J37/2955 take precedence)} · CPC title

• H01J2237/0044

  of objects being observed or treated · CPC title