Insertion layers for perpendicularly magnetized Heusler layers with reduced magnetic damping

Patent metadata

Field	Value
Publication number	US-11925124-B2
Application number	US-202117217766-A
Country	US
Kind code	B2
Filing date	Mar 30, 2021
Priority date	Jan 12, 2021
Publication date	Mar 5, 2024
Grant date	Mar 5, 2024

Abstract

A magnetic structure, a magnetic device incorporating the magnetic structure and a method for providing the magnetic structure are described. The magnetic structure includes a magnetic layer, a templating structure and a resistive insertion layer. The magnetic layer includes a Heusler compound and has a perpendicular magnetic anisotropy energy exceeding an out-of-plane demagnetization energy. The templating structure has a crystal structure configured to template at least one of the Heusler compound and the resistive insertion layer. The magnetic layer is on the templating structure. The resistive insertion layer is configured to reduce magnetic damping for the Heusler compound and allow for templating of the Heusler compound.

First claim

What is claimed is:

1. A magnetic structure, comprising:
a magnetic layer including a Heusler compound, the magnetic layer having a perpendicular magnetic anisotropy energy exceeding an out-of-plane demagnetization energy;
a resistive insertion layer configured to reduce magnetic damping for the Heusler compound and allow for tem plating of the Heusler compound, wherein the resistive insertion layer is crystalline; and
a templating structure having a crystal structure configured to template at least one of the Heusler compound and the resistive insertion layer, the magnetic layer residing on the templating structure,
wherein the resistive insertion layer is on the magnetic layer such that the magnetic layer is between the templating structure and the resistive insertion layer, and
wherein the templating structure is magnetic.

2. The magnetic structure of claim 1 , wherein the magnetic structure further includes:
a tunneling barrier layer, the templating structure residing on top of the tunneling barrier layer; and wherein the templating structure has the thickness of not more than twenty Angstroms.

3. The magnetic structure of claim 2 , wherein the templating structure includes Co( 1-x )Al x , where x is less than 0.4 and the thickness is not more than ten Angstroms.

4. A magnetic device, comprising:
a free layer including a Heusler compound, the free layer having a perpendicular magnetic anisotropy energy exceeding an out-of-plane demagnetization energy;
a resistive insertion layer configured to reduce magnetic damping for the Heusler compound and allow for tem plating of the Heusler compound, wherein the resistive insertion layer is crystalline;
a templating structure having a crystal structure configured to template at least one of the Heusler compound and the resistive insertion layer, the free layer residing on the templating structure;
a nonmagnetic spacer layer; and
a reference layer, the nonmagnetic spacer layer being between the free layer and the reference layer,
wherein the resistive insertion layer is on top of the templating structure and between the templating structure and the free layer, and
wherein the resistive insertion layer has a lattice mismatch of not more than ten percent for the Heusler compound.

5. The magnetic device of claim 4 , wherein the nonmagnetic spacer layer has a nonmagnetic spacer layer resistance;
wherein the resistive insertion layer has a (001) texture, and a resistance of not more than ten percent of the nonmagnetic spacer layer resistance; and
wherein the Heusler compound has a Heusler thickness of at least five nanometers.

6. The magnetic device of claim 4 , wherein the Heusler compound includes at least one of Mn 3 Ge, Mn 3 Al, Mn 3 Sb, Mn 3 Ga, Mn 3 Sn, Mn 3 In, and Mn 2 CoSn;
wherein the resistive insertion layer includes at least one of MgO, Mg—Al-Oxide, Mg—Ti-Oxide, Mg—Fe-Oxide, Mg—Zn-Oxide, Mg—Mn-Oxide, MgAl 2 O 4 , CaTiO 3 , SrTiO 3 , BaTiO 3 , LaAlO 3 , BaSnO 3 , NaCl, LiF, GaAs, ZnSe, Cu(InxGa 1-x )Se 2 , AlN and ScN; and
wherein the tem plating structure includes at least one of Ta, Ru, Fe, Ir, CoFeB, MgO, Ta—N, Ti—N, Mn—N, VN, Cu—N, Sc—N, CoSn, CoGa, CoGe, NiAl, FeAl, CoAl, RuAl, IrAl, CuZn, AgZn, Cr, Ag—Mg, and Cr—Ru.

7. A method for providing a magnetic structure, comprising:
providing a tem plating structure having a crystal structure configured to template at least one of a Heusler compound and a resistive insertion layer;
providing the resistive insertion layer configured to reduce magnetic damping for the Heusler compound and allow for templating of the Heusler compound wherein the resistive insertion layer is crystalline; and
providing, on the templating structure, a magnetic layer including the Heusler compound, the magnetic layer having a perpendicular magnetic anisotropy energy exceeding an out-of-plane demagnetization energy,
wherein the templating structure is between the resistive insertion layer and the magnetic layer, and
wherein the resistive insertion layer includes at least one of Mg—Fe-Oxide, Mg—Zn-Oxide, Mg—Mn-Oxide, CaTiO 3 , SrTiO 3 , BaTiO 3 , LaAlO 3 , BaSnO 3 , NaCl, LiF, GaAs, ZnSe, Cu(In x Ga 1-x )Se 2 , AlN and ScN.

8. The method of claim 7 , wherein
the resistive insertion layer has a lattice mismatch of not more than ten percent of the Heusler compound and the templating structure has a thickness of not more than twenty Angstroms.

9. The method of claim 7 , wherein the templating structure has the thickness of at least one Angstrom and not more than ten Angstroms.

10. The method of claim 7 , further comprising:
providing an additional tem plating structure below the resistive insertion layer, the resistive insertion layer being between the templating structure and the additional templating structure.

11. The method of claim 10 , further comprising:
providing a seed layer, the additional templating structure residing on and sharing an interface with the seed layer.

Assignees

• Samsung Electronics Co Ltd
• IBM

Inventors

• Jeong Jaewoo
• Filippou Panagiotis Charilaos
• Ferrante Yari
• Garg Chirag
• Samant Mahesh
• Ikhtiar
• Apalkov Dmytro

Classifications

• H01F10/3268

  the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn · CPC title

• H01F10/3254

  the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ] · CPC title

• H01F10/30

  characterised by the composition of the intermediate layers {, e.g. seed, buffer, template, diffusion preventing, cap layers (H01F10/06 and H01F10/32 take precedence)} · CPC title

• H01F10/1936

  Half-metallic, e.g. epitaxial CrO2 or NiMnSb films · CPC title

• H10B61/00

  Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices · CPC title