Lateral Schottky diode

Patent metadata

Field	Value
Publication number	US-11923462-B2
Application number	US-202117211116-A
Country	US
Kind code	B2
Filing date	Mar 24, 2021
Priority date	Apr 15, 2016
Publication date	Mar 5, 2024
Grant date	Mar 5, 2024

Abstract

Various aspects of Schottky diodes are described. The diodes are capable of withstanding reverse-bias voltages of up to and in excess of 2000 V with reverse current leakage as low as 0.4 microamp/millimeter in some cases among other aspects. In one example, a Schottky diode includes a conduction layer, a first layer over the conduction layer, a second layer over the first layer, a first cathode and a second cathode spaced apart and in electrical contact with the conduction layer, and an anode over the second layer between the first cathode and the second cathode. The first cathode and the second cathode can be electrically connected to each other as a cathode of the Schottky diode.

First claim

The invention claimed is:

1. A Schottky diode comprising:
a conduction layer;
a first layer comprising a first semiconductor material over the conduction layer;
a second layer comprising a second semiconductor material over the first layer, the first semiconductor material being different than the second semiconductor material;
a first cathode and a second cathode, spaced apart and in electrical contact with the conduction layer, the first cathode and the second cathode being electrically connected to each other as a cathode of the Schottky diode; and
an anode over the second layer between the first cathode and the second cathode.

2. The Schottky diode of claim 1 , wherein the conduction layer comprises gallium-nitride material.

3. The Schottky diode of claim 1 , further comprising an oxide layer between the anode and the second layer, the oxide layer extending under a center of the anode.

4. The Schottky diode of claim 3 , wherein the oxide layer comprises a gallium-oxide layer.

5. The Schottky diode of claim 1 , further comprising an anode-connected field plate electrically connected to the anode and extending on beyond outer edges of the anode toward the first cathode and the second cathode.

6. The Schottky diode of claim 5 , wherein the anode-connected field comprises a multilayer composition selected from the following group: Ti/Pt/Au, Al/Cu, or TiN/Cu.

7. The Schottky diode of claim 5 , further comprising a second anode-connected field plate electrically connected to the anode-connected field plate at a central region of the anode-connected field plate, the second anode-connected field plate extending on beyond outer edges of the anode-connected field plate toward the first cathode and the second cathode.

8. The Schottky diode of claim 7 , further comprising an insulating layer positioned in part between the anode-connected field plate and the second anode-connected field plate, the insulating layer contacting a peripheral region of a top surface of the anode-connected field plate, outside of the central region.

9. The Schottky diode of claim 1 , wherein the anode comprises a multilayer composition selected from the following group: Ni/Pd/Au/Ti, Ni/Pt/Au/Ti, Ni/Ti/Al/W, Ni/W/Al/W, W/Al/W, Ni/Wn/Al/W, WN/Al/W, and Pt/Au/Ti.

10. The Schottky diode of claim 1 , further comprising a buffer layer on a substrate and under the conduction layer.

11. The Schottky diode of claim 10 , wherein the substrate comprises silicon.

12. The Schottky diode of claim 1 , wherein the first layer comprises aluminum gallium nitride.

13. The Schottky diode of claim 12 , wherein the second layer comprises gallium-nitride material.

14. The Schottky diode of claim 1 , further comprising electrical isolation regions in the conduction layer, outside the Schottky diode.

15. The Schottky diode of claim 14 , wherein the electrical isolation regions comprise damaged crystal lattice structure in the conduction layer.

16. The Schottky diode of claim 14 , wherein the electrical isolation regions comprise one or more of the following implanted ion species: nitrogen, phosphorous, boron, and argon.

17. The Schottky diode of claim 1 , wherein the first cathode and the second cathode extend parallel to each other in electrical contact with the conduction layer.

18. The Schottky diode of claim 1 , further comprising:
a third cathode in electrical contact with the conduction layer, spaced apart from the second cathode, and extending parallel to the second cathode; and
a second anode over the second layer between the second cathode and the third cathode.

19. The Schottky diode of claim 18 , further comprising:
a cathode conductive lead electrically connected to the first cathode, the second cathode, and the third cathode; and
an anode conductive lead electrically connected to the anode and the second anode.

20. The Schottky diode of claim 18 , further comprising:
a first bond pad electrically connected to the cathode conductive lead; and
a second bond pad electrically connected to the anode conductive lead.

21. A method for forming a Schottky diode, the method comprising:
forming a conduction layer on a substrate;
forming a first layer of a first semiconductor material over the conduction layer;
forming a second layer of a second semiconductor material over the first layer, the first semiconductor material being different than the second semiconductor material;
forming a first cathode and a second cathode spaced apart and in electrical contact with the conduction layer, the first cathode and the second cathode being electrically connected to each other as a cathode of the Schottky diode; and
forming an anode over the second layer between the first cathode and the second cathode.

22. The method of claim 21 , further comprising forming an oxide layer between the anode and the second layer such that the oxide layer extends under a center of the anode.

23. The method of claim 22 , wherein forming the oxide layer comprises:
opening a via in the oxide layer to expose a region of the conduction layer for the anode, prior to forming the anode; and
subjecting the region to an oxygen plasma for a period of time.

24. The method of claim 23 , wherein the period of time is between 10 seconds and approximately 120 seconds.

25. The method of claim 23 , further comprising maintaining pressure between approximately 0.5 Torr and approximately 3 Torr while subjecting the region to the oxygen plasma.

26. The method of claim 21 , further comprising forming one or more anode-connected field plates in electrical contact with the anode, the one or more anode-connected field plates extending beyond outer edges of the anode.

Assignees

• Macom Tech Solutions Holdings Inc

Inventors

• Boles Timothy E
• Carlson Douglas
• Kaleta Anthony

Classifications

• H10W10/031

  of isolation regions comprising PN junctions · CPC title

• H10W10/30

  Isolation regions comprising PN junctions · CPC title

• H10W10/00

  Isolation regions in semiconductor bodies between components of integrated devices · CPC title

• H10W10/01

  Manufacture or treatment · CPC title

• H10D64/112

  comprising multiple field plate segments · CPC title