Device, manufacturing method thereof, and electronic device

Patent metadata

Field	Value
Publication number	US-2016233235-A1
Application number	US-201615011848-A
Country	US
Kind code	A1
Filing date	Feb 1, 2016
Priority date	Feb 6, 2015
Publication date	Aug 11, 2016
Grant date	—

Abstract

A wiring having excellent electrical characteristics is provided. A wiring having stable electrical characteristics is provided. A device is manufactured through the steps of forming a first insulating film over a substrate, forming a second insulating film over the first insulating film, removing part of the first insulating film and part of the second insulating film to form a first opening, forming a first conductor in the first opening and over a top surface of the second insulating film, and forming a second conductor by planarizing a surface of the first conductor so as to remove part of the first conductor.

First claim

1 . A method for manufacturing a device, comprising the steps of:
forming a first insulating film over a substrate; forming a second insulating film over the first insulating film; removing part of the first insulating film and first part of the second insulating film to form a first opening; forming a first conductor in the first opening and over a top surface of the second insulating film; forming a second conductor by planarizing a surface of the first conductor so as to remove part of the first conductor; forming a third insulating film over the second insulating film and the second conductor; removing second part of the second insulating film and part of the third insulating film to form a second opening so as to expose part of a top surface of the second conductor and part of a side surface of the second conductor; forming a third conductor over a top surface of the third insulating film and in the second opening so as to be in contact with the second conductor; and removing part of the third conductor to form a fourth conductor.

2 . A method for manufacturing a device, comprising the steps of:
forming a first insulating film over a substrate; forming a second insulating film over the first insulating film; removing part of the first insulating film and first part of the second insulating film to form a first opening; forming a first conductor in the first opening and over a top surface of the second insulating film; removing part of the first conductor by a chemical mechanical polishing method to make a surface of the first conductor parallel to a bottom surface of the substrate, so that a second conductor is formed in the first opening; forming a third insulating film over the second insulating film and the second conductor; removing second part of the second insulating film and part of the third insulating film to form a second opening so as to expose part of a top surface of the second conductor and part of a side surface of the second conductor; forming a third conductor over a top surface of the third insulating film and in the second opening so as to be in contact with the second conductor; and removing part of the third conductor to form a fourth conductor.

3 . A method for manufacturing a device, comprising the steps of:
forming a first insulating film over a substrate; forming a second insulating film over the first insulating film; removing part of the first insulating film and first part of the second insulating film to form a first opening; forming a first conductor in the first opening and over a top surface of the second insulating film; removing part of the first conductor by a chemical mechanical polishing method to make a surface of the first conductor parallel to a bottom surface of the substrate, so that a second conductor is formed in the first opening; forming a third insulating film over the second insulating film and the second conductor; removing second part of the second insulating film and part of the third insulating film to form a second opening so as to expose part of a top surface of the second conductor and part of a side surface of the second conductor; forming a third conductor over a top surface of the third insulating film and in the second opening so as to be in contact with the second conductor; and removing part of the third conductor by a chemical mechanical polishing method to make a surface of the third conductor parallel to the bottom surface of the substrate, so that a fourth conductor is formed in the second opening.

4 . The method for manufacturing a device according to claim 1 , comprising the step of forming an element over the fourth conductor,
wherein the element comprises an oxide semiconductor.

5 . The method for manufacturing a device according to claim 1 ,
wherein the second insulating film comprises aluminum, wherein the first insulating film comprises silicon.

6 . The method for manufacturing a device according to claim 1 ,
wherein the second insulating film has a lower hydrogen-transmitting property than the first insulating film.

7 . A device comprising:
a first conductor; a second conductor; a first insulating film; and a second insulating film; wherein the second insulating film comprises a first region in contact with a top surface of the first insulating film and a second region in contact with a side surface of the second conductor, wherein the side surface of the second conductor comprises a region in contact with the first insulating film, and wherein the second conductor is in contact with a side surface of the first conductor, a top surface of the first conductor, and the top surface of the first insulating film.

8 . A device comprising:
a first conductor; a second conductor; a first insulating film; and a second insulating film; wherein the second insulating film comprises a first region in contact with a top surface of the first insulating film and a second region in contact with a side surface of the second conductor, wherein the second conductor comprises a first region having a first thickness and a second region having a second thickness, wherein the first region is in contact with a top surface of the first conductor, wherein the second region is in contact with the top surface of the first insulating film, and wherein the first thickness is smaller than the second thickness.

9 . A device comprising:
a first conductor; a second conductor; a first insulating film; and a second insulating film; wherein the second insulating film comprises a first region in contact with a top surface of the first insulating film and a second region in contact with a side surface of the second conductor, wherein the first conductor comprises a third conductor and a fourth conductor, wherein a side surface of the third conductor comprises a region in contact with the first insulating film, wherein the fourth conductor is in contact with a top surface of the third conductor, and wherein the second conductor is in contact with the side surface of the third conductor, a top surface of the fourth conductor, and the top surface of the first insulating film.

10 . The device according to claim 7 ,
wherein the device comprises an oxide semiconductor, and wherein the oxide semiconductor is stacked over the second conductor.

11 . The device according to claim 7 ,
wherein the first insulating film comprises aluminum, and wherein the second insulating film comprises silicon.

12 . The device according to claim 7 ,
wherein the first insulating film has a lower hydrogen-transmitting property than the second insulating film.

13 . A device comprising:
a first conductor; a second conductor; a first insulating film; and a second insulating film; wherein the second insulating film comprises a first region in contact with a top surface of the first insulating film, wherein the second conductor comprises a first region positioned over the first conductor, wherein a region that is the highest of a top surface of the first conductor is higher than a second region that is the highest of a top surface of the second insulating film, and wherein a second region that is the lowest of a bottom surface of the second conductor is lower than the second region that is the highest of the top surface of the second insulating film.

14 . An electronic device comprising the device according to claim 7 .

15 . An electronic device comprising the device according to claim 8 .

16 . An electronic device comprising the device according to claim 9 .

Assignees

• Semiconductor Energy Lab

Inventors

• Miyairi Hidekazu
• Moriwaka Tomoaki

Classifications

• H10D30/6757

  characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715) · CPC title

• H10D86/423

  comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title

• H10D86/0212

  comprising manufacture, treatment or coating of substrates · CPC title

• H10D30/6758

  characterised by the insulating substrates · CPC title

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title