Photomask pellicle and method of forming the same

Patent metadata

Field	Value
Publication number	US-11923196-B2
Application number	US-202117351219-A
Country	US
Kind code	B2
Filing date	Jun 17, 2021
Priority date	Mar 4, 2021
Publication date	Mar 5, 2024
Grant date	Mar 5, 2024

Abstract

A first capping layer is deposited over a substrate. A network of nanowires is grown over the first capping layer. A second capping layer is deposited over the network of nanowires. The substrate is etched to form a frame of a pellicle. The first capping layer and the second capping layer are patterned to form a membrane of the pellicle, wherein the patterning reduces a material of the first capping layer and the second capping layer to form a coating on the nanowires.

First claim

What is claimed is:

1. A method, comprising:
depositing a first capping layer over a substrate;
growing a network of nanowires over the first capping layer;
depositing a second capping layer over the network of nanowires;
etching the substrate to form a frame of a pellicle; and
patterning the first capping layer and the second capping layer to form a membrane of the pellicle, wherein during the patterning a material of the first capping layer and the second capping layer around the nanowires is thinned to form a coating on the nanowires.

2. The method of claim 1 , wherein the nanowires comprise carbon, molybdenum silicide, molybdenum silicon nitride, boron carbide or boron nitride.

3. The method of claim 1 , wherein the first capping layer or the second capping layer comprises silicon nitride, silicon oxide, silicon carbide, zirconium nitride or zirconium oxide.

4. The method of claim 1 , further comprising depositing a thermal conductive layer prior to the depositing of the second capping layer or subsequent to the depositing of the second capping layer.

5. The method of claim 4 , wherein the thermal conductive layer comprises molybdenum silicon nitride or boron silicon nitride.

6. The method of claim 5 , wherein a portion of the coating is exposed through the thermal conductive layer.

7. The method of claim 1 , wherein a ratio of a diameter of the nanowires to a thickness of the coating is between about 1 and about 10.

8. The method of claim 1 , wherein the patterning forms a plurality of gaps in the membrane and configures the membrane as a free-standing structure anchored at the frame.

9. The method of claim 1 , further comprising depositing a mask layer on a side of the substrate opposite to the first capping layer, wherein the etching of the substrate comprises etching the substrate using the mask layer as an etching mask.

10. The method of claim 1 , further comprising depositing a buffer layer over the substrate prior to the depositing of the first capping layer.

11. The method of claim 10 , wherein the etching of the substrate comprises etching the buffer layer to expose the first capping layer.

12. The method of claim 1 , wherein the first capping layer or the second capping layer is configured to exert tensile stress on the membrane.

13. A method, comprising:
depositing a first capping layer over a substrate;
growing a network of nanowires over the first capping layer;
depositing a second capping layer over the network of nanowires, wherein the first capping layer and the second capping layer encapsulate the nanowires;
patterning the substrate according to a patterned mask layer; and
patterning the first capping layer and the second capping layer according to the patterned mask layer to form a coating, from the first capping layer and the second capping layer, on a first portion of the nanowires, and to keep a second portion of the nanowires encapsulated by the first capping layer and the second capping layer.

14. The method of claim 13 , wherein the depositing of the first capping layer comprises depositing a third capping layer on a side the substrate opposite to the first capping layer.

15. The method of claim 14 , further comprising etching the third capping layer prior to patterning the substrate.

16. The method of claim 13 , further comprising:
depositing two buffer layers on two sides of the substrate prior to the depositing of the first capping layer; and
etching the two buffer layers according to the patterned mask layer.

17. A photomask pellicle, comprising:
a frame defining an interior space; and
a membrane over the interior space and comprising:
a network of nanowires, wherein the nanowires cross each other; and
a coating on the network of nanowires and conformal to a circumference of each of the nanowires,

wherein the membrane includes a first portion encapsulated by the frame and a second portion including gaps between the nanowires.

18. The photomask pellicle of claim 17 , wherein the nanowires comprise carbon, molybdenum silicide, boron carbide or boron nitride.

19. The photomask pellicle of claim 17 , wherein the coating comprises silicon nitride, silicon oxide, silicon carbide, zirconium nitride or zirconium oxide.

20. The photomask pellicle of claim 17 , further comprising a thermal conductive layer on the coating.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Lin Yun-Yue
• Yu Chen-Chieh

Classifications

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• H10P14/3206

  Carbon, e.g. diamond-like carbon · CPC title

• H10P14/3462 Primary

  Nanowires · CPC title

• H10D62/119

  Nanowire, nanosheet or nanotube semiconductor bodies · CPC title