Catalytic processes for obtaining inorganic nanostructures by using soft metals
US-9527735-B2 · Dec 27, 2016 · US
US11919781B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11919781-B2 |
| Application number | US-202117300772-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 1, 2021 |
| Priority date | Aug 1, 2017 |
| Publication date | Mar 5, 2024 |
| Grant date | Mar 5, 2024 |
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A method embodiment involves preparing single metal or mixed transition metal chalcogenide using exfoliation of two or more different bulk transition metal dichalcogenides in a manner to form an intermediate hetero-layered transition metal chalcogenide structure, which can be treated to provide a single-phase transition metal chalcogenide.
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We claim: 1. A transition metal chalcogenide material having an as-ball milled hetero-layered structure having layers of different composition exfoliated from different starting transition metal chalcogenides by ball milling the different starting transition metal chalcogenides together wherein individual layers of the as-ball milled hetero-layered structure are chemically un-modified relative to the different starting transition metal chalcogenides. 2. The material of claim 1 that has been converted to comprise a substantially homogeneous solid solution of two or more different transition metal chalcogenides. 3. The material of claim 1 wherein respective layers have at least one of a different transition metal constituent and a chalcogen constituent from the next adjacent layer. 4. The material of claim 1 where the hetero-layered structure comprises transition metal dichalcogenide layers with different transition metal constituents. 5. The material of claim 1 wherein the hetero-layered structure comprises transition metal trichalcogenide layers having different transition metal constituents. 6. The material of claim 1 wherein the hetero-layered structure comprises transition metal dichalcogenide layers having different chalcogen constituents. 7. The material of claim 1 wherein the hetero-layered structure comprises transition metal trichalcogenide layers having different chalcogen constituents. 8. The material of claim 1 wherein each of the layers includes a transition metal that is selected from the group consisting of Ti, Zr, Hf, Nb, Ta, Mo, W, Re, Pd, Pt, In, Ga and Sn. 9. The material of claim 1 which includes at least one of graphite, black phosphorus, and boron nitride. 10. The material of claim 2 which has been heated to convert the structure to a single-phase structure. 11. The material of claim 1 wherein the layers of the as-ball milled hetero-layered structure are self-assembled by the ball milling. 12. The material of claim 8 having a chemical composition represented by (M a M 2 b M 3 c . . . n )(X d X 2 e X 3 f ), where the formula unit includes two or more different transition metals (M), and X, X 2 and X 3 represent S, Se, or Te, whereby the sum of a+b+c+. . . n is between 1 and 3 and the sum of d+e+f is between 1 and 6.
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