Microelectromechanical resonator

Patent metadata

Field	Value
Publication number	US-11916534-B2
Application number	US-202217847438-A
Country	US
Kind code	B2
Filing date	Jun 23, 2022
Priority date	Feb 9, 2014
Publication date	Feb 27, 2024
Grant date	Feb 27, 2024

Abstract

A moveable micromachined member of a microelectromechanical system (MEMS) device includes an insulating layer disposed between first and second electrically conductive layers. First and second mechanical structures secure the moveable micromachined member to a substrate of the MEMS device and include respective first and second electrical interconnect layers coupled in series, with the first electrically conductive layer of the moveable micromachined member and each other, between first and second electrical terminals to enable conduction of a first joule-heating current from the first electrical terminal to the second electrical terminal through the first electrically conductive layer of the moveable micromachined member.

First claim

What is claimed is:

1. A device comprising:
a die;
a microelectromechanical systems (MEMS) resonator on the die, the MEMS resonator including a body having a layer of degenerately doped silicon, the body also having a piezoelectric material layer, the body to vibrate at a frequency during operation of the MEMS resonator, the frequency having a temperature dependent characteristic; and
a heating element to heat the MEMS resonator.

2. The device of claim 1 wherein:
the layer of degenerately doped silicon has a positive temperature coefficient of frequency (TCF) at a predetermined temperature and the piezoelectric material layer has a negative TCF at the predetermined temperature.

3. The device of claim 1 wherein:
the device further comprises a temperature sensor;
the temperature sensor is to sense a temperature affecting the resonator; and
the heating element is to be controlled so as to adjust the temperature affecting the resonator as a function of feedback provided on the basis of temperature sensed by the temperature sensor.

4. The device of claim 3 wherein:
the device further comprises temperature control circuitry; and
the heating element is controlled by the temperature control circuitry so as to maintain the resonator at a target setpoint temperature during operation of the MEMS resonator.

5. The device of claim 1 wherein:
the MEMS resonator further comprises a frequency modifying element; and
the frequency modifying element is to be dynamically controlled during operation of the MEMS resonator so as to urge the frequency of vibration toward a target frequency.

6. The device of claim 1 wherein:
the frequency of vibration is a resonant frequency;
the body further comprises a frequency adjustment structure; and
in a calibration process, the frequency adjustment structure is to be selectively heated by the heating element so as to adjust the resonant frequency to be closer to a target frequency.

7. The device of claim 1 wherein:
the layer of degenerately doped silicon is a first degenerately doped silicon layer; and
the body also has a second degenerately doped silicon layer.

8. The device of claim 7 wherein:
the first degenerately doped silicon layer is to serve as a first electrode and the second degenerately doped silicon layer is to serve as a second electrode.

9. The device of claim 8 wherein:
the piezoelectric material layer lies in between the first electrode and the second electrode.

10. The device of claim 8 wherein:
the device further comprises a third electrode;
the third electrode and a first one of the first electrode and the second electrode lie on a same side of the piezoelectric material layer, relative to a second one of the first electrode and the second electrode; and
the first one and the third electrode are patterned from a common layer of the device.

11. The device of claim 8 wherein:
a first one of the first degenerately doped silicon layer and the second degenerately doped silicon layer comprises substantially only single crystal silicon and a second one of the first degenerately doped silicon layer and the second degenerately doped silicon layer predominately comprises polycrystalline silicon.

12. The device of claim 8 wherein:
the body is characterized by absence of a metal layer.

13. The device of claim 7 wherein:
the piezoelectric material layer of the body is characterized by a first first-order temperature coefficient of frequency (TCF) and a first second-order TCF;
the first degenerately doped silicon layer of the body is characterized by a second first-order TCF and a second second-order TCF;
the second degenerately doped silicon layer of the body is characterized by a third first-order TCF and a third second-order TCF;
the body is structured such that a sum of the first first-order TCF, the second first-order TCF and the third first-order TCF is substantially equal to a target value at a predetermined temperature; and
the body is structured such that a sum of the first second-order TCF, the second second-order TCF and the third second-order TCF is substantially equal to a target value at the predetermined temperature.

14. The device of claim 7 wherein:
the piezoelectric material layer of the body is characterized by a first first-order temperature coefficient of frequency (TCF) and a first second-order TCF;
the first degenerately doped silicon layer of the body is characterized by a second first-order TCF and a second second-order TCF;
the second degenerately doped silicon layer of the body is characterized by a third first-order TCF and a third second-order TCF;
the body is structured such that a sum of the first first-order TCF, the second first-order TCF and the third first-order TCF lies within a predetermined range of values when the MEMS resonator is operating in the temperature range of negative 40 degrees Celsius through positive 85 degrees Celsius; and
the body is structured such that a sum of the first second-order TCF, the second second-order TCF and the third second-order TCF lies within a predetermined range of values when the MEMS resonator is operating between the temperature range of negative 40 degrees Celsius through positive 85 degrees Celsius.

15. The device of claim 7 wherein each of the first degenerately doped silicon layer and the second degenerately doped silicon layer is doped with phosphorus.

16. The device of claim 1 wherein:
the device further comprises programmable storage to receive information representing temperature-dependent behavior of the MEMS resonator;
in a calibration process, the heating element is to be thermally cycled; and
the information representing the temperature-dependent behavior is dependent on variation in the frequency of vibration during the thermal cycling of the heating element performed in the calibration process.

17. The device of claim 16 wherein:
the device further comprises a temperature sensor; and
the device further comprises circuitry to generate an electrical oscillation signal during operation of the MEMS resonator, dependent on both of the frequency of vibration and a signal from the temperature sensor representing a sensed temperature.

18. The device of claim 1 wherein the device is embodied as an oven-controlled oscillator (OCXO) integrated circuit, and wherein the device comprises control circuitry to cause the heating element to heat the MEMS resonator, during a normal operating mode of the MEMS resonator, to a setpoint temperature.

19. The device of claim 1 wherein:
the device is embodied as an oscillator integrated circuit having a first external electrical contact and a second external electrical contact;
the first external electrical contact is to output a clock signal during a normal operating mode of the MEMS resonator;
the second external electrical contact is to receive a control signal; and
the clock signal is generated as a function of the control signal.

20. The device of claim 1 wherein:
the device is embodied as an oscillator integrated circuit having a first external electrical contact and a second external electrical contact;
the first external electrical contact is to output a clock signal during a normal operating mode of the MEMS resonator;
the second external electrical contact is to receive a control signal in association with a pre-installation calibration process of the MEMS resonator; and
the heating element is to heat the MEMS resonator in response to the control signal.

Assignees

• SiTime Coporation
• Sitime Corp

Inventors

• Doll Joseph C
• Miller Nicholas
• Grosjean Charles I
• Hagelin Paul M
• Hill Ginel C

Classifications

• H03H9/125 Primary

  Driving means, e.g. electrodes, coils · CPC title

• H03H3/0077 Primary

  by tuning of resonance frequency · CPC title

• H03H9/02259

  Driving or detection means · CPC title

• H03H9/02401

  by annealing · CPC title

• H03H9/02448

  of temperature influence · CPC title