Semiconductor unit, semiconductor device, battery unit, and vehicle

Patent metadata

Field	Value
Publication number	US-11909329-B2
Application number	US-201917288827-A
Country	US
Kind code	B2
Filing date	Oct 30, 2019
Priority date	Nov 2, 2018
Publication date	Feb 20, 2024
Grant date	Feb 20, 2024

Abstract

A semiconductor unit includes a semiconductor device, a controller, and a resistor. The semiconductor device includes a transistor arranged between a positive electrode of a battery and an inverter circuit electrically connected to the battery. The controller is connected to a control terminal of the transistor and configured to control the transistor. The resistor arranged between the control terminal and the controller. The controller controls the transistor so that when a current flowing to the transistor is greater than or equal to a threshold value, the transistor is deactivated. The resistor has a resistance value that is greater than or equal to 100 Ω.

First claim

The invention claimed is:

1. A semiconductor unit, comprising:
a semiconductor device including a transistor, the transistor including a first terminal for a battery, a second terminal for an inverter circuit, and a control terminal;
a controller connected to the control terminal and configured to control on-off operations between the first terminal and the second terminal; and
a resistor arranged between the control terminal and the controller, wherein
the controller controls the transistor so that when a current flowing to the transistor is greater than or equal to a threshold value, the transistor is deactivated,
the resistor has a resistance value that is greater than or equal to 100 Ω,
the transistor further includes a temperature-sensing diode,
the transistor is provided as a semiconductor chip, and
the temperature-sensing diode is arranged in a central portion of a front surface of the semiconductor chip of the transistor.

2. The semiconductor unit according to claim 1 , wherein the transistor includes a current sense element that is electrically connected to a current sense pad, the current sense element being formed of a pattern that is separated from the first terminal.

3. The semiconductor unit according to claim 1 , wherein
the controller further includes a temperature detection circuit that detects a temperature of the transistor in accordance with a signal from the temperature-sensing diode, and
when the signal detected by the temperature detection circuit is greater than or equal to a temperature threshold value, the controller provides a current decrease signal to the control terminal of the transistor.

4. The semiconductor unit according to claim 1 wherein
the transistor is an insulated MOSFET formed from a silicon carbide (SiC) substrate,
the MOSFET includes the semiconductor chip having the front surface and a rear surface,
the front surface of the semiconductor chip includes a source electrode pad,
the rear surface of the semiconductor chip includes a drain electrode,
the source electrode pad is separated into two source electrode pads at a center of the front surface of the semiconductor chip, and
the temperature-sensing diode is arranged between the two source electrode pads.

5. The semiconductor unit according to claim 4 , wherein
the transistor includes a current sense element, the front surface of the semiconductor chip includes a gate electrode pad, a current sense pad electrically connected to the current sense element, an anode electrode pad electrically connected to an anode of the temperature-sensing diode, and a cathode electrode pad electrically connected to a cathode of the temperature-sensing diode,
the two source electrode pads include a cutaway portion that is cut away in a direction orthogonal to an arrangement direction of the two source electrode pads in a plan view of the transistor,
the cutaway portion defines a region recessed in the direction orthogonal to the arrangement direction, and
in the region, the gate electrode pad, the current sense pad, the anode electrode pad, and the cathode electrode pad are arranged in a direction parallel to the arrangement direction.

6. The semiconductor unit according to claim 1 , wherein
the transistor is an insulated-gate bipolar transistor (IGBT),
the IGBT includes the semiconductor chip having the front surface and a rear surface,
the front surface of the semiconductor chip includes an emitter electrode pad,
the rear surface of the semiconductor chip includes a collector electrode,
the emitter electrode pad is separated into two emitter electrode pads at a center of the front surface of the semiconductor chip, and
the temperature-sensing diode is arranged between the two emitter electrode pads.

7. The semiconductor unit according to claim 6 , wherein
the transistor includes a current sense element,
the front surface of the semiconductor chip includes a gate electrode pad, a current sense pad electrically connected to the current sense element, an anode electrode pad electrically connected to an anode of the temperature-sensing diode, and a cathode electrode pad electrically connected to a cathode of the temperature-sensing diode,
two emitter electrode pads include a cutaway portion that is cut away in a direction orthogonal to an arrangement direction of the two emitter electrode pads in a plan view of the transistor,
the cutaway portion defines a region recessed in the direction orthogonal to the arrangement direction, and
in the region, the gate electrode pad, the current sense pad, the anode electrode pad, and the cathode electrode pad are arranged in a direction parallel to the arrangement direction.

8. The semiconductor unit according to claim 1 , wherein
the semiconductor unit comprises multiple of the semiconductor device, and
the transistors of the multiple semiconductor devices are connected in parallel to each other.

9. The semiconductor unit according to claim 8 , wherein each of the transistors of the multiple semiconductor devices includes a temperature-sensing diode.

10. The semiconductor unit according to claim 9 , wherein
the controller includes temperature detection circuits,
the temperature detection circuits respectively detect temperatures of the transistors of the multiple semiconductor devices from the temperature-sensing diodes of the multiple semiconductor devices, and
when at least one of the temperatures detected by the temperature detection circuits is greater than or equal to a temperature threshold value, the controller provides a current decrease signal to each of the control terminals of the transistors of the multiple semiconductor devices.

11. A battery unit, comprising:
a battery; and
the semiconductor unit according to claim 1 .

12. A vehicle, comprising:
the battery unit according to claim 11 ;
the inverter circuit; and
a motor driven by the inverter circuit.

13. A semiconductor unit, comprising:
a semiconductor device including a transistor, the transistor including a first terminal for a battery, a second terminal for an inverter circuit, and a control terminal; and
a controller connected to the control terminal and configured to control on-off operations between the first terminal and the second terminal, wherein
the controller controls a voltage between the first terminal or the second terminal of the transistor and the control terminal the of the transistor to be less than or equal to a voltage at which a current flowing to the transistor is saturated at a predetermined current,
the transistor further includes a temperature-sensing diode,
the transistor is provided as a semiconductor chip, and
the temperature-sensing diode is arranged in a central portion of a front surface of the semiconductor chip of the transistor.

14. The semiconductor unit according to claim 13 , wherein
the semiconductor unit comprises multiple of the semiconductor device, and
the transistors of the multiple semiconductor devices are connected in parallel to each other.

15. The semiconductor unit according to claim 13 , wherein the controller controls a voltage between the first terminal or the second terminal and the control terminal of each of the transistors of the multiple semiconductor devices so that a current flowing to each of the transistors is less than or equal to a saturation current.

16. A semiconductor device, comprising:
a transistor including a first terminal for a battery, a second terminal for an inverter circuit, and a control terminal; and
at least one bonding wire connected between an electrode of the

Assignees

• Rohm Co Ltd

Inventors

• Miura Mineo
• Hayashiguchi Masashi
• Terada Jun

Classifications

• H02M7/537 Primary

  using semiconductor devices only, e.g. single switched pulse inverters · CPC title

• H02H7/12

  for static converters or rectifiers {(for discharge lamp power supplies using static converters H05B41/2851, H05B41/2921, H05B41/2981)} · CPC title

• H02M1/32

  Means for protecting converters other than automatic disconnection · CPC title

• H03K17/08

  Modifications for protecting switching circuit against overcurrent or overvoltage · CPC title

• H02M1/08 Primary

  Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters · CPC title