Photodiode, manufacturing method thereof, and display screen

Patent metadata

Field	Value
Publication number	US-11901469-B2
Application number	US-202016975712-A
Country	US
Kind code	B2
Filing date	Jun 12, 2020
Priority date	Jan 6, 2020
Publication date	Feb 13, 2024
Grant date	Feb 13, 2024

Abstract

The present disclosure provides a photodiode, a manufacturing method thereof, and a display screen. The photodiode includes: a first electrode including a first sub-part and a second sub-part disposed at an interval, wherein the second sub-part includes a first end and a second end; a connecting part disposed on the first sub-part, the first end, and a substrate corresponding to a gap between the first sub-part and the second sub-part; and a light converting part and a second electrode disposed on the second end in sequence.

First claim

What is claimed is:

1. A photodiode, comprising:
a substrate;
a first electrode disposed on the substrate and comprising a first sub-part and a second sub-part disposed at an interval, wherein the second sub-part comprises a first end and a second end;
a connecting part disposed on the first sub-part, the first end, and the substrate corresponding to a gap between the first sub-part and the second sub-part, wherein the connecting part connects the first sub-part with the first end to form a series resistance part;
an electron transport layer disposed on the second end;
a light converting part disposed on the electron transport layer;
a hole transport layer disposed on the light converting part; and
a second electrode disposed on the hole transport layer.

2. The photodiode according to claim 1 , wherein the connecting part and the light converting part are manufactured in a same process.

3. The photodiode according to claim 1 , wherein the connecting part and the light converting part comprise a same material.

4. The photodiode according to claim 3 , wherein the connecting part comprises amorphous silicon.

5. The photodiode according to claim 1 , wherein the gap between the first sub-part and the second sub-part is in a first predetermined range, and a thickness of the connecting part is in a second predetermined range.

6. The photodiode according to claim 1 , wherein the second sub-part further comprises a middle part disposed between the first end and the second end.

7. The photodiode according to claim 1 , wherein when a direction of incident light of the photodiode is a first direction, the first electrode comprises a transparent conductive material and the second electrode comprises a metal material; and
when the direction of the incident light of the photodiode is a second direction, the second electrode comprises the transparent conductive material and the first electrode comprises the metal material.

8. A display screen including a photodiode, comprising:
a substrate;
a first electrode disposed on the substrate and comprising a first sub-part and a second sub-part disposed at an interval, wherein the second sub-part comprises a first end and a second end;
a connecting part disposed on the first sub-part, the first end, and the substrate corresponding to a gap between the first sub-part and the second sub-part, wherein the connecting part connects the first sub-part with the first end to form a series resistance part;
an electron transport layer disposed on the second end;
a light converting part disposed on the electron transport layer;
a hole transport layer disposed on the light converting part; and
a second electrode disposed on the hole transport layer.

9. The display screen according to claim 8 , wherein the connecting part and the light converting part are manufactured in a same process.

10. The display screen according to claim 8 , wherein the connecting part and the light converting part comprise a same material.

11. The display screen according to claim 10 , wherein the connecting part comprises amorphous silicon.

12. The display screen according to claim 8 , wherein the gap between the first sub-part and the second sub-part is in a first predetermined range, and a thickness of the connecting part is in a second predetermined range.

13. The display screen according to claim 8 , wherein the second sub-part further comprises a middle part disposed between the first end and the second end.

14. The display screen according to claim 8 , wherein when a direction of incident light of the photodiode is a first direction, the first electrode comprises a transparent conductive material and the second electrode comprises a metal material; and
when the direction of the incident light of the photodiode is a second direction, the second electrode comprises the transparent conductive material and the first electrode comprises the metal material.

15. The display screen according to claim 14 , wherein the metal material comprises at least one of molybdenum or titanium.

16. The display screen according to claim 14 , wherein the transparent conductive material comprises at least one of indium tin oxide (ITO) or indium zinc oxide (IZO).

17. A manufacturing method of a photodiode, comprising:
manufacturing a first electrode on a substrate and patterning the first electrode to form a first sub-part and a second sub-part disposed at an interval, wherein the second sub-part comprises a first end and a second end;
manufacturing an electron transport layer on the second end;
manufacturing an active layer on the electron transport layer, the first sub-part, the second sub-part, and the substrate corresponding to a gap between the first sub-part and the second sub-part;
patterning the active layer to form a light converting part on the electron transport layer and to form a connecting part on the first sub-part, the first end, and the substrate corresponding to the gap between the first sub-part and the second sub-part, wherein the connecting part connects the first sub-part with the first end to form a series resistance part;
manufacturing a hole transport layer on the light converting part; and
manufacturing a second electrode on the hole transport layer.

18. The manufacturing method of the photodiode according to claim 17 , wherein the gap between the first sub-part and the second sub-part and a thickness of the connecting part are defined according to a predetermined resistance value.

19. The manufacturing method of the photodiode according to claim 17 , wherein the connecting part comprises amorphous silicon.

20. The manufacturing method of the photodiode according to claim 17 , wherein when a direction of incident light of the photodiode is a first direction, the first electrode comprises a transparent conductive material and the second electrode comprises a metal material; and
when the direction of the incident light of the photodiode is a second direction, the second electrode comprises the transparent conductive material and the first electrode comprises the metal material.

Assignees

• Wuhan China Star Optoelectronics Technology Co Ltd

Inventors

• Hu Li
• Shi Tengteng
• Zha Guowei
• Luo Wei

Classifications

• H10F71/138

  Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes · CPC title

• H10F71/103

  including only Group IV materials · CPC title

• H10F30/22 Primary

  the devices having only one potential barrier, e.g. photodiodes · CPC title

• H10F30/15

  comprising amorphous semiconductors · CPC title

• H10F77/244 Primary

  made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers · CPC title