Quantum dots and production method thereof

Patent metadata

Field	Value
Publication number	US-11901178-B2
Application number	US-202117187930-A
Country	US
Kind code	B2
Filing date	Mar 1, 2021
Priority date	Jun 14, 2018
Publication date	Feb 13, 2024
Grant date	Feb 13, 2024

Abstract

A production method of a quantum dot comprising a Group IIIA-VA compound, the quantum dot as prepared, and an electronic device including the same, and the production method includes:supplying a Group VA element precursor including a halide of a Group VA element and a first ligand of a phosphine compound or a first amine compound; andperforming a reaction between the Group VA element precursor and a Group IIIA metal precursor in the presence of a reducing agent in an organic reaction medium including a second amine compound.

First claim

What is claimed is:

1. A plurality of quantum dots comprising a Group IIIA-VA compound and not comprising cadmium,
wherein
the Group IIIA-VA compound comprises
a Group IIIA metal comprising indium and optionally gallium, aluminum, or a combination thereof; and
a Group VA element comprising phosphorus, antimony, arsenic, bismuth, or a combination thereof, and

a molar ratio of the Group VA element with respect to the Group IIIA metal is greater than or equal to about 1.15 as determined by an inductively coupled plasma spectroscopic analysis.

2. The quantum dots of claim 1 , wherein a molar ratio of the Group VA element with respect to the Group IIIA metal is in a range of from about 1.2 to about 1.44.

3. The quantum dots of claim 1 , wherein the plurality of quantum dots have an average particle size of less than or equal to about 50 nanometers.

4. The quantum dots of claim 1 , wherein a particle size distribution of the plurality of quantum dots is less than or equal to about 12% of an average particle size.

5. The quantum dots of claim 1 , wherein a molar ratio of the Group VA element with respect to the Group IIIA metal is less than about 1.48:1 as determined by an energy dispersive X-ray spectroscopy (TEM-EDS) analysis.

6. The quantum dots of claim 1 , wherein the Group VA element comprises at least two of antimony, arsenic, and bismuth.

7. The quantum dots of claim 1 , wherein the Group VA element comprises antimony and arsenic.

8. The quantum dots of claim 7 , wherein in the quantum dots, a mole ratio of antimony with respect to arsenic is greater than or equal to about 0.1 and less than or equal to about 9.

9. The quantum dots of claim 1 , wherein the plurality of quantum dots comprises InSb, InAs x Sb 1-x , In x Ga 1-x As y Sb 1-y , or a combination thereof wherein x is greater than 0 and less than 1 and y is greater than 0 and less than 1.

10. The quantum dots of claim 1 , wherein the quantum dots comprise a primary amine compound comprising a C6 to C30 aliphatic hydrocarbon group and a monocarboxylic acid compound comprising a C6 to C30 aliphatic hydrocarbon compound.

11. The quantum dots of claim 1 , wherein the quantum dots further comprise an alkylammonium halide, a carboxylic acid compound comprising a thiol group, a thiocyanate compound, Na 2 S, NOBF 4 , an alkali azide or a combination thereof.

12. The quantum dots of claim 1 , wherein the quantum dots comprise a zinc blende crystal structure as determined by an X-ray diffraction spectroscopy analysis.

13. The quantum dots of claim 1 , wherein in a UV-Vis absorption spectrum of the quantum dots, a first absorption peak wavelength is greater than or equal to about 900 nm and less than or equal to about 1600 nm.

14. The quantum dots of claim 1 , wherein in a photoluminescence spectrum of the plurality of the quantum dots, a maximum photoluminescent peak wavelength is in a range of greater than or equal to about 700 nm and less than or equal to about 2,000 nm.

15. A device comprising a first electrode and a second electrode spaced apart from each other and a semiconductor layer, wherein the semiconductor layer comprises a plurality of quantum dots of claim 1 .

16. The device of claim 15 , wherein the semiconductor layer is disposed between the first electrode and the second electrode.

17. The device of claim 15 , wherein the semiconductor layer comprises an alkylammonium halide, a carboxylic acid compound including a thiol group, a thiocyanateic acid (SCN) compound, Na 2 S, NOBF 4 , an alkali azide, or a combination thereof.

18. The device of claim 15 , wherein the device further comprises a carrier auxiliary layer between the semiconductor layer and the first electrode, between the semiconductor layer and the second electrode, or both.

19. The device of claim 18 , wherein the carrier auxiliary layer comprises an electron transport layer, a hole transport layer, a carrier blocking layer, or a combination thereof.

Assignees

• Samsung Electronics Co Ltd
• Univ Pennsylvania

Inventors

• Kim Tae Gon
• Oh Nuri
• Zhao Tianshuo
• Kagan Cherie
• Jang Eun Joo
• Murray Christopher

Classifications

• H10P14/668 Primary

  the materials being characterised by the deposition precursor materials · CPC title

• H10D62/814

  Quantum box structures · CPC title

• H10D48/383

  Quantum effect devices, e.g. of devices using quantum reflection, diffraction or interference effects · CPC title

• H10D30/43

  having one-dimensional [1D] charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels · CPC title

• H10D30/014

  of FETs having zero-dimensional [0D] or one-dimensional [1D] channels, e.g. quantum wire FETs, single-electron transistors [SET] or Coulomb blockade transistors · CPC title