RRAM filament spatial localization using a laser stimulation

Patent metadata

Field	Value
Publication number	US-11901002-B2
Application number	US-202117539295-A
Country	US
Kind code	B2
Filing date	Dec 1, 2021
Priority date	Dec 1, 2021
Publication date	Feb 13, 2024
Grant date	Feb 13, 2024

Abstract

System and method to localize a position of an RRAM filament of resistive memory device at very low bias voltages using a scanning laser beam. The approach is non-invasive and allows measurement of a large number of devices for creating statistics relating to the filament formation. A laser microscope system is configured to perform a biasing the RRAM cell with voltage (or current). Concurrent to the applied bias, a laser beam is generated and aimed at different positions of the RRAM cell (e.g., by a raster scanning). Changes in the current (or voltage) flowing through the cell are measured. The method creates a map of the current (or voltage) changes at the different laser positions and detects a spot in the map corresponding to higher (or lower) current (or voltage). The method determines the (x,y) position of the spot compared to the edge/center of the RRAM cell.

First claim

What is claimed is:

1. A method for determining a spatial location of a filament in a resistive random access memory (RRAM) cell, the method comprising:
applying a bias signal to the RRAM cell;
applying a laser signal at different positions of a surface of the RRAM cell;
measuring a change in a sense signal at the RRAM cell responsive to the applied laser signal at each different surface position;
creating, using a hardware processor, a map of the sense signal changes corresponding to the different surface positions;
detecting, using the hardware processor, a presence of a spot in the map at a particular surface position;
determining an edge or center of the RRAM cell; and
determining a 2-dimensional coordinate position of the spot compared to the edge/center of the RRAM cell, the spot indicating the location of the filament in the RRAM device.

2. The method as claimed in claim 1 , wherein the applying a laser signal at different surface positions comprises using a raster scanning of the laser signal at locations of a surface of the RRAM cell.

3. The method as claimed in claim 1 , wherein creating a map of the sense signal changes responsive to the different laser positions comprises:
creating, using a hardware processor, a color map image depicting resulting measured signal values responsive to each applied laser signal at the different surface positions of the RRAM cell using a coloring scheme.

4. The method as claimed in claim 3 , further comprising:
identifying, within the color map image, a location or position of the spot corresponding to a maximum or minimum signal change.

5. The method as claimed in claim 4 , wherein the identifying, within the color map image, of a location or a position of the spot comprises one of:
computing, using a hardware processor, a centroid of data representing color map image; or
fitting, using the hardware processor, a 2D Gaussian to the data representing color map image to determine a center of the spot; or
applying, using the hardware processor, a circular shape having a variable center and radius to the identified spot in the color map image.

6. The method as claimed in claim 4 , wherein the determining an edge or center of the RRAM cell comprises:
measuring an intensity of light reflected from the surface of the RRAM cell based on the applied laser signal at the different positions of the RRAM cell;
creating a pattern image indicating an amount of reflection; and
applying edge detector to the pattern image to highlight edges of the RRAM cell.

7. The method as claimed in claim 6 , further comprising:
fitting a geometrical shape to match the highlighted edges of the patterned image of the RRAM cell; and
determining a size of the geometrical shape; and
based on the size, determining a center pixel coordinate in the matched geometrical shape in the patterned image.

8. The method as claimed in claim 7 , further comprising:
determining a filament location in an RRAM cell switching medium using:
the obtained location or position of the spot from the color map image;
the determined size of the geometrical shape;
the determined center pixel coordinate in the geometrical shape in the patterned image; and
a size of the resistive memory device cell.

9. The method as claimed in claim 8 , wherein the determining a filament location in an RRAM cell switching medium further comprises:
computing, using the hardware processor, a 2-dimensional coordinate position (X, Y) according to:
X=Sm/Sp *( xs−xc ) and Y=Sm/Sp *( ys−yc )

wherein Sm is the size of the resistive memory device cell, Sp is the size of the geometrical shape, (xc, yc) is the determined center pixel coordinate in the geometrical shape, and (xs, ys) is the obtained location or position of the spot from the color map image.

10. The method as claimed in claim 1 , wherein an amount of bias applied to the RRAM cell causes at least one of: forming the filament, setting the resistive memory device, or resetting the resistive memory device, said method further comprising one or more of:
detecting no presence of a spot indicating a non-formed state of the RRAM cell; or
detecting a spot in the color map image indicating a formed state of the resistive device in a reset state; or
detecting a spot in the color map indicating a formed state of the resistive device in a set state.

11. The apparatus as claimed in claim 6 , wherein an amount of bias applied to the resistive memory device causes at least one of: forming the filament, setting the resistive memory device, or resetting the resistive memory device, said hardware processor further configured to one or more of:
detect no presence of a spot indicating a non-formed state of the RRAM cell; or
detect a spot in the color map image indicating a formed state of the resistive device in a reset state; or
detect a spot in the color map indicating a formed state of the resistive device in a set state.

12. An apparatus for determining a spatial location of a filament in a resistive random access memory (RRAM) cell, the apparatus comprising:
a signal generator for applying a bias signal to the RRAM cell;
a laser signal generator for applying a laser signal at different positions of a surface of the RRAM cell;
a detector for measuring a change in a signal sensed at the RRAM cell responsive to the applied laser signal at each different surface position;
a memory configured to store a set of instructions;
a hardware processor, in communication with the memory, the set of instructions configuring the hardware processor to:
create a mapping of the measured sense signal changes corresponding to the different surface positions;
detect a presence of a spot in the map corresponding to a sense signal change at a particular surface position;
determine an edge or center of the RRAM cell; and
determine a 2-dimensional coordinate position of the spot compared to the edge/center of the RRAM cell, the spot indicating the location of the filament in the RRAM device.

13. The apparatus as claimed in claim 12 , further comprising:
a raster scanning system for applying the laser signal at different positions of the surface of the RRAM cell according to a scanning pattern and scan velocity.

14. The apparatus as claimed in claim 12 , wherein to create a mapping of the measured signal changes at the different surface positions, the hardware processor is further configured to:
create a color map image depicting resulting measured signal values responsive to each applied laser beam signal at the different surface positions of the RRAM cell using a coloring scheme.

15. The apparatus as claimed in claim 14 , wherein the hardware processor is further configured to:
identify, within the color map image, a location or position of the spot corresponding to a maximum or minimum signal change.

16. The apparatus as claimed in claim 15 , wherein to determine an edge or center of the RRAM cell, the hardware processor is further configured to:
measure an intensity of light reflected from the surface of the RRAM cell based on the applied laser signal at the different surface positions of the RRAM cell;
create a pattern image indicating an amount of reflection; and
apply an edge detector to the pattern image to highlight edges of the RRAM cell.

17. The apparatus as claimed in claim 16 , wherein the hardware processor is further configured to:
fit a geometrical shape to match the highlighted edges of the patterned image of the RRAM cell; and
determine a size of the geometrical shape; and
based on the siz

Assignees

• IBM

Inventors

• Stellari Franco
• Wu Ernest Y
• Ando Takashi
• Song Peilin

Classifications

• G11C13/0064 Primary

  Verifying circuits or methods · CPC title

• G11C13/0007

  comprising metal oxide memory material, e.g. perovskites · CPC title

• H10N70/24

  based on migration or redistribution of ionic species, e.g. anions, vacancies · CPC title

• H10N70/826

  adapted for essentially vertical current flow, e.g. sandwich or pillar type devices · CPC title

• H10N70/8833

  Binary metal oxides, e.g. TaOx · CPC title