Treatment of a thin film by hydrogen plasma and polarisation in order to improve the crystalline quality thereof

Patent metadata

Field	Value
Publication number	US-11898239-B2
Application number	US-202017642530-A
Country	US
Kind code	B2
Filing date	Sep 11, 2020
Priority date	Sep 13, 2019
Publication date	Feb 13, 2024
Grant date	Feb 13, 2024

Abstract

Methods for treating a thin film made from a conductive or semiconductive material may improve the crystalline quality thereof. Such methods may include: supplying a substrate including, on one of the faces thereof, a thin film of the material; and biased plasma treating the assembly formed by the substrate and the thin film at a given temperature and for a given time, so as to obtain a crystalline reorganization over a depth of the thin film, the biased plasma treatment including an electrical biasing of the thin film and an exposure of the film thus biased to a hydrogen plasma, the biased plasma treatment being implemented at a temperature that is below the melting points of the thin film and of the substrate.

First claim

The invention claimed is:

1. A method for treating a thin film made from a conductive or semiconductive material to improve the crystalline quality thereof, the method comprising:
supplying a substrate comprising, on one of the faces thereof, a thin film of the material; and
biased plasma treating the assembly formed by the substrate and the thin film at a given temperature and for a given time, so as to obtain a crystalline reorganization over a depth of the thin film,
wherein the biased plasma treating comprises an electrical biasing of the thin film and exposing the film thus biased to a hydrogen plasma,
wherein the biased plasma treating is implemented at a temperature that is below the melting points of the thin film and of the substrate,
wherein the hydrogen plasma is obtained from a gas containing solely hydrogen,
wherein the gas is devoid of any precursor of the conductive or semiconductive material of the film,
wherein a time of the exposure of the biased film to the hydrogen plasma is in a range of from 10 minutes to several hours,
wherein, in the supplying, the face of the substrate is monocrystalline and the thin film present on the face is polycrystalline, and
wherein the biased plasma treating is implemented until the polycrystalline film becomes an epitaxial film.

2. The method of claim 1 , wherein the biased plasma treating is conducted at a temperature below 1200° C.

3. The method of claim 1 , wherein the electrical biasing of the thin film is obtained by applying to the film, to the substrate or, if the substrate is disposed on a substrate carrier, to the substrate carrier, a negative potential, with respect to ground, in a range of from −10 to −1000V.

4. The method of claim 1 , wherein the exposing of the biased film to the hydrogen plasma is conducted for a time in a range of from 10 minutes to 2 hours.

5. The method of claim 1 , wherein the biased plasma treating is implemented at a pressure maintained in a range of from 10 to 200 mbar.

6. The method of claim 1 , wherein the thin film is made from iridium.

7. The method of claim 1 , wherein the plasma is generated by microwave waves at 2.45 GHz and the power injected into the plasma is in a range of from 200 to 2000 W.

8. The method of claim 1 , wherein the thin film comprises iridium.

9. The method of claim 1 , wherein the thin film comprises molybdenum.

10. The method of claim 1 , wherein the thin film is made from molybdenum.

11. A method for treating a thin film made from a conductive or semiconductive material to improve the crystalline quality thereof, the method comprising:
supplying a substrate comprising, on one of the faces thereof, a thin film of the material; and
biased plasma treating the assembly formed by the substrate and the thin film at a given temperature and for a given time, so as to obtain a crystalline reorganization over a depth of the thin film,
wherein the biased plasma treating comprises an electrical biasing of the thin film and exposing the film thus biased to a hydrogen plasma,
wherein the biased plasma treating is implemented at a temperature that is below the melting points of the thin film and of the substrate,
wherein the hydrogen plasma is obtained from a gas consisting of hydrogen and helium,
wherein the gas is devoid of any precursor of the conductive or semiconductive material of the film,
wherein a time of the exposure of the biased film to the hydrogen plasma is in a range of from 10 minutes to several hours,
wherein, in the supplying, the face of the substrate is monocrystalline and the thin film present on the face is polycrystalline, and
wherein the biased plasma treating is implemented until the polycrystalline film becomes an epitaxial film.

12. The method of claim 11 , wherein the biased plasma treating is conducted at a temperature below 1200° C.

13. The method of claim 11 , wherein the electrical biasing of the thin film is obtained by applying to the film, to the substrate or, if the substrate is disposed on a substrate carrier, to the substrate carrier, a negative potential, with respect to ground, in a range of from −10 to −1000V.

14. The method of claim 11 , wherein the exposing of the biased film to the hydrogen plasma is conducted for a time in a range of from 10 minutes to 2 hours.

15. The method of claim 11 , wherein the biased plasma treating is implemented at a pressure maintained in a range of from 10 to 200 mbar.

16. The method of claim 11 , wherein the thin film is made from iridium.

17. The method of claim 11 , wherein the plasma is generated by microwave waves at 2.45 GHz and the power injected into the plasma is in a range of from 200 to 2000 W.

18. The method of claim 11 , wherein the thin film comprises iridium.

19. The method of claim 11 , wherein the thin film comprises molybdenum.

20. The method of claim 11 , wherein the thin film is made from molybdenum.

Assignees

• Commissariat Energie Atomique

Inventors

• Delchevalrie Julien
• Arnault Jean-Charles
• Saada Samuel
• Bachelet Romain

Classifications

• H10P95/00 Primary

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• C23C16/279

  control of diamond crystallography · CPC title

• H10P14/36

  characterised by treatments done before the formation of the materials · CPC title

• H10P14/3406

  Carbon, e.g. diamond-like carbon · CPC title

• H10P14/3238

  being insulating materials · CPC title