Heterogeneous fluoropolymer mixture polishing pad

Patent metadata

Field	Value
Publication number	US-11897082-B2
Application number	US-202117472610-A
Country	US
Kind code	B2
Filing date	Sep 11, 2021
Priority date	Sep 11, 2021
Publication date	Feb 13, 2024
Grant date	Feb 13, 2024

Abstract

The invention provides a polishing pad suitable for polishing at least one of semiconductor, optical, magnetic or electromechanical substrates. The polishing pad includes a polyurea polishing layer and a polyurea matrix. The polyurea matrix has a soft phase and a hard phase. The soft phase is formed from soft segments and the hard phase is formed from diisocyanate hard segments and a curative agent. The soft segment areva copolymer of aliphatic fluorine-free polymer groups and a fluorocarbon having a length of a least six carbons. The polyurea matrix is cured with the curative agent and includes gas or liquid-filled polymeric microelements. The soft segments form a fluorine rich phase that concentrates adjacent the polymeric microelements and at the polishing layer during polishing. The polishing layer remains hydrophilic during polishing in shear conditions.

First claim

We claim:

1. A polishing pad suitable for polishing at least one of semiconductor, optical, magnetic or electromechanical substrates comprising:
a polyurea polishing layer, the polyurea polishing layer including a polyurea matrix, the polyurea matrix having a soft phase and a hard phase, the soft phase being formed from soft segments and the hard phase being formed from diisocyanate hard segments and a curative agent, the soft segment being a copolymer of aliphatic fluorine-free polymer groups and a fluorocarbon having a length of a least six carbons, the polyurea matrix being cured with the curative agent and including gas or liquid-filled polymeric microelements, the polymeric microelements having shell walls and a weight average diameter of less than 150 μm, the soft segments forming a fluorine depleted phase and a fluorine rich phase, wherein the fluorine rich phase concentrates adjacent the polymeric microelements and at the polishing layer during polishing wherein the polishing layer remains hydrophilic during polishing in shear conditions.

2. The polishing pad of claim 1 wherein the fluorine rich phase produces regions of higher and lower fluorine concentration surrounding the polymeric microelements.

3. The polishing pad of claim 1 wherein the fluorine rich phase adjacent the polymeric microelements has a thickness of less than fifty percent of an average diameter of the polymeric microelements.

4. The polishing pad of claim 1 wherein the polishing layer has a polishing surface and wherein the polymeric microelements fracture under compression adjacent the polishing surface independent of diamond conditioning.

5. The polishing pad of claim 1 wherein the polishing layer forms a surface containing denticle shaped structures during polishing.

6. A polishing pad suitable for polishing at least one of semiconductor, optical, magnetic or electromechanical substrates comprising:
a polyurea polishing layer, the polyurea polishing layer including a polyurea matrix, the polyurea matrix having a soft phase and a hard phase, the soft phase being formed from soft segments and the hard phase being formed from diisocyanate hard segments and a curative agent and wherein the hard phase is precipitated within the soft phase, the soft segment being a copolymer of aliphatic fluorine-free polymer groups and a fluorocarbon having a length of a least six carbons, the polyurea matrix being cured with the curative agent and including gas or liquid-filled polymeric microelements, the polymeric microelements having shell walls and a weight average diameter of less than 150 μm, the soft segments forming a fluorine depleted phase and a fluorine rich phase, wherein the fluorine rich phase concentrates adjacent the polymeric microelements and at the polishing layer during polishing wherein the polishing layer remains hydrophilic during polishing in shear conditions.

7. The polishing pad of claim 6 wherein the fluorine rich phase produces regions of higher and lower fluorine concentration surrounding the polymeric microelements.

8. The polishing pad of claim 6 wherein the fluorine rich phase adjacent the polymeric microelements has a thickness of less than fifty percent of an average diameter of the polymeric microelements.

9. The polishing pad of claim 6 wherein the polishing layer has a polishing surface and wherein the polymeric microelements fracture under compression adjacent the polishing surface independent of diamond conditioning.

10. The polishing pad of claim 6 wherein the polishing layer forms a surface containing denticle-shaped structures during polishing.

Assignees

• Rohm & Haas Elect Materials Cmp Holdings Inc

Inventors

• Gadinski Matthew R
• So Joseph

Classifications

• H10P95/062

  involving a dielectric removal step · CPC title

• H10P52/403

  of conductive or resistive materials · CPC title

• B24B37/24 Primary

  characterised by the composition or properties of the pad materials · CPC title

• C08G18/12

  using two or more compounds having active hydrogen in the first polymerisation step · CPC title

• C08G18/285

  Nitrogen containing compounds · CPC title