Compressible non-reticulated polyurea polishing pad

Patent metadata

Field	Value
Publication number	US-11548114-B1
Application number	US-202117472609-A
Country	US
Kind code	B1
Filing date	Sep 11, 2021
Priority date	Sep 11, 2021
Publication date	Jan 10, 2023
Grant date	Jan 10, 2023

Abstract

The invention provides a polishing pad suitable for polishing at least one of semiconductor, optical, magnetic or electromechanical substrates. It includes a polyurea polishing layer and a polyurea matrix. The polyurea has a soft segment being a copolymer of aliphatic fluorine-free polymer groups and a fluorocarbon having a length of a least six carbons. The polyurea matrix being cured with a curative agent and including gas or liquid-filled polymeric microelements. The polyurea matrix has a bulk region and a transition region adjacent the bulk region that extends to the polishing layer. The polymeric microelements in the transition region decrease in thickness as they approach the polishing layer with thickness of the compressed microelements adjacent the polishing layer being less than fifty percent of a diameter of the polymeric microelements in the bulk region. The polishing layer remains hydrophilic during polishing in shear conditions.

First claim

We claim:

1. A polishing pad suitable for polishing at least one of semiconductor, optical, magnetic or electromechanical substrates comprising:
a polyurea polishing layer, the polyurea polishing layer including a polyurea matrix, the polyurea having a soft segment and a hard segment, the soft segment being a copolymer of aliphatic fluorine-free polymer groups and a fluorocarbon having a length of a least six carbons, the polyurea matrix being cured with a curative agent and including gas or liquid-filled polymeric microelements, the polyurea matrix being having a bulk region, a transition region adjacent the bulk region that extends to the polishing layer, the polymeric microelements having a diameter and being spherical in the bulk region of the polyurea matrix, the polymeric microelements in the transition region having decreased thickness as it approaches the polishing layer with thickness of the compressed microelements adjacent the polishing layer being less than fifty percent of the diameter of the polymeric microelements in the bulk region and the polymeric microspheres being fractured at the polishing layer during polishing wherein the polishing layer remains hydrophilic during polishing in shear conditions.

2. The polishing pad of claim 1 wherein the fluorine rich region produces regions of higher and lower fluorine concentration surrounding the polymeric microelements.

3. The polishing pad of claim 1 wherein the fluorine rich phase has an average thickness of less than fifty percent of an average diameter of the polyurea microelements.

4. The polishing pad of claim 1 wherein the polymeric microelements fracture under compression adjacent the polishing slurring independent of diamond conditioning.

5. The polishing pad of claim 1 wherein the polishing layer can form a surface containing denticle-like structures during polishing.

6. A polishing pad suitable for polishing at least one of semiconductor, optical, magnetic or electromechanical substrates comprising:
a polyurea polishing layer, the polyurea polishing layer including a polyurea matrix, the polyurea having a soft segment and a hard segment, the soft segment being a copolymer of aliphatic fluorine-free polymer groups and a fluorocarbon having a length of a least six carbons, the polyurea matrix being cured with a curative agent and including gas or liquid-filled polymeric microelements, the polyurea matrix being having a bulk region, a transition region adjacent the bulk region that extends to the polishing layer, the polymeric microelements having a diameter and being spherical in the bulk region of the polyurea matrix, the polymeric microelements in the transition region having decreased thickness as it approaches the polishing layer with thickness of the compressed microelements adjacent the polishing layer being less than fifty percent of the diameter of the polymeric microelements in the bulk region wherein at least of a portion of the polymeric microelements adjacent the polishing layer form channels that interconnect adjacent and the polymeric microspheres being fractured at the polishing layer during polishing wherein the polishing layer remains hydrophilic during polishing in shear conditions.

7. The polishing pad of claim 6 wherein the fluorine rich region produces regions of higher and lower fluorine concentration surrounding the polymeric microelements.

8. The polishing pad of claim 6 wherein the fluorine rich phase has an average thickness of less than fifty percent of an average diameter of the polyurea microelements.

9. The polishing pad of claim 6 wherein the polymeric microelements fracture under compression adjacent the polishing slurring independent of diamond conditioning.

10. The polishing pad of claim 6 wherein the polishing layer can form a surface containing denticle-like structures during polishing.

Assignees

• Rohm & Haas Elect Materials Cmp Holdings Inc

Inventors

• Gadinski Matthew R
• So Joseph

Classifications

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• B24B37/26 Primary

  characterised by the shape of the lapping pad surface, e.g. grooved · CPC title

• C09K3/14

  Anti-slip materials; Abrasives {(products specifically intended for the fabrication of abrasive tools, blocks or papers, or for operations of the kind of sand-blasting and barrelling B24B31/14, B24C1/00; polishing compositions containing abrasive or grinding agents C09G1/02; friction compositions for brakes or clutches F16D69/02; polishing of semi-conductors H10P52/40)} · CPC title

• B24B37/24 Primary

  characterised by the composition or properties of the pad materials · CPC title

• C08L75/04

  Polyurethanes · CPC title