Substrate treating apparatus and substrate treating method
US-2017345683-A1 · Nov 30, 2017 · US
US11897009B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11897009-B2 |
| Application number | US-201916981309-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 7, 2019 |
| Priority date | Mar 26, 2018 |
| Publication date | Feb 13, 2024 |
| Grant date | Feb 13, 2024 |
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A substrate processing technique including a process of forming a liquid film on an upper surface of a substrate and excellently solidifying the liquid film is provided. A substrate processing method includes an atmosphere control step of supplying a drying gas to a front surface of a substrate on which a pattern has been formed and to which a liquid has adhered and making a dry atmosphere around the front surface of the substrate, a to-be-solidified liquid supplying step of supplying a to-be-solidified liquid to the front surface of the substrate, and a solidification step of forming a solidified mass by solidifying a liquid film of the to-be-solidified liquid. The atmosphere control step is started before the liquid film of the to-be-solidified liquid supplied to the front surface of the substrate in the to-be-solidified liquid supplying step is formed.
Opening claim text (preview).
The invention claimed is: 1. A substrate processing method, comprising: an atmosphere control step of supplying a drying gas to a front surface of a substrate on which a pattern has been formed and making a dry atmosphere around the front surface of the substrate; a to-be-solidified liquid supplying step of supplying a to-be-solidified liquid to the front surface of the substrate; and a solidification step of forming a solidified mass by solidifying a liquid film of the to-be-solidified liquid, wherein the atmosphere control step is started before the liquid film of the to-be-solidified liquid supplied to the front surface of the substrate in the to-be-solidified liquid supplying step is formed, and a solidification point of the to-be-solidified liquid is 5° C. to 40° C. 2. The substrate processing method according to claim 1 , wherein the atmosphere control step is started before the to-be-solidified liquid supplying step is started. 3. The substrate processing method according to claim 1 , wherein the atmosphere control step is ended while the to-be-solidified liquid supplying step is being performed, or when the to-be-solidified liquid supplying step is ended, or after the to-be-solidified liquid supplying step is ended. 4. The substrate processing method according to claim 1 , further comprising a shielding-plate approaching step of causing a shielding plate to relatively approach the substrate, the shielding plate being disposed to face the substrate and having a substantially flat surface that faces the front surface of the substrate, wherein the shielding-plate approaching step is performed before the atmosphere control step is started. 5. The substrate processing method according to claim 4 , wherein a distance between the substrate and the shielding plate is always constant at least until the to-be-solidified liquid supplying step is completed after the shielding-plate approaching step is completed. 6. The substrate processing method according to claim 5 , wherein the distance between the substrate and the shielding plate is always constant until the solidification step is completed after the shielding-plate approaching step is completed. 7. The substrate processing method according to claim 1 , further comprising a removing step of removing the to-be-solidified liquid that has been solidified from the substrate after the solidification step is completed. 8. A substrate processing apparatus comprising: a substrate holder that rotates while holding a substrate; a first gas supply that supplies a drying gas to a front surface of the substrate held by the substrate holder; a to-be-solidified liquid supply that supplies a to-be-solidified liquid, having a solidification point in a range from 5° C. to 40° C., to the front surface of the substrate held by the substrate holder; and a solidifier that solidifies the to-be-solidified liquid, wherein the to-be-solidified liquid supplied to the front surface of the substrate by the to-be-solidified liquid supply forms a liquid film by rotation of the substrate holder, and wherein the liquid film is formed in a state in which a dry atmosphere has been made around the front surface of the substrate. 9. The substrate processing apparatus according to claim 8 , further comprising a shielding plate that is disposed to face the substrate held by the substrate holder and that has a substantially flat surface that faces the substrate. 10. The substrate processing apparatus according to claim 8 , further comprising a remover that removes the to-be-solidified liquid that has been solidified from the substrate.
Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title
Apparatus for applying a liquid, a resin, an ink or the like · CPC title
for drying · CPC title
Cleaning during device manufacture · CPC title
characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel · CPC title
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