Methods for increasing the density of high-index nanoimprint lithography films

Patent metadata

Field	Value
Publication number	US-11892771-B2
Application number	US-202017136959-A
Country	US
Kind code	B2
Filing date	Dec 29, 2020
Priority date	Apr 20, 2020
Publication date	Feb 6, 2024
Grant date	Feb 6, 2024

Abstract

Embodiments of the present disclosure generally relate to densified nanoimprint films and processes for making these densified nanoimprint films, as well as optical devices containing the densified nanoimprint films. In one or more embodiments, a densified nanoimprint film contains a base nanoimprint film and a metal oxide disposed on the base nanoimprint film and in between the nanoparticles. The base nanoimprint film contains nanoparticles, where the nanoparticles contain titanium oxide, zirconium oxide, niobium oxide, tantalum oxide, hafnium oxide, chromium oxide, indium tin oxide, silicon nitride, or any combination thereof. The metal oxide contains aluminum oxide, titanium oxide, zirconium oxide, niobium oxide, tantalum oxide, indium oxide, indium tin oxide, hafnium oxide, chromium oxide, scandium oxide, tin oxide, zinc oxide, yttrium oxide, praseodymium oxide, magnesium oxide, silicon oxide, silicon nitride, silicon oxynitride, or any combination thereof.

First claim

What is claimed is:

1. A densified nanoim print film, comprising:
a base nanoimprint film comprising nanoparticles, wherein the nanoparticles comprise zirconium oxide, niobium oxide, tantalum oxide, hafnium oxide, chromium oxide, silicon nitride, or any combination thereof; and
a metal oxide disposed on the base nanoimprint film and in between the nanoparticles, wherein the metal oxide comprises niobium oxide, chromium oxide, scandium oxide, yttrium oxide, praseodymium oxide, magnesium oxide, silicon nitride, silicon oxynitride, or any combination thereof, and wherein:
the nanoparticles and the metal oxide contain different materials; and
the refractive index of the densified nanoimprint film is about 2% to about 30% greater than the refractive index of the base nanoim print film.

2. The densified nanoimprint film of claim 1 , wherein the base nanoimprint film comprises voids disposed between the nanoparticles, and wherein the metal oxide is disposed at least partially within the voids.

3. The densified nanoimprint film of claim 2 , wherein at least 3% of the volume occupied by the voids in the base nanoim print film contains the metal oxide.

4. The densified nanoimprint film of claim 3 , wherein about 20% to about 90% of the volume occupied by the voids in the base nanoim print film contains the metal oxide.

5. The densified nanoimprint film of claim 1 , wherein the nanoparticles comprise niobium oxide, tantalum oxide, chromium oxide, silicon nitride, or any combination thereof.

6. The densified nanoimprint film of claim 5 , wherein the metal oxide comprises niobium oxide, chromium oxide, scandium oxide, yttrium oxide, praseodymium oxide, magnesium oxide, silicon nitride, or any combination thereof.

7. The densified nanoimprint film of claim 1 , wherein the base nanoimprint film is a film by an imprint process comprising a spin-coating process, and wherein the metal oxide is a coating deposited by an atomic layer deposition process.

8. The densified nanoimprint film of claim 1 , wherein the densified nanoimprint film has a greater value of hardness, fracture strain, yield strength, and/or etch resistance than the base nanoimprint film.

9. The densified nanoimprint film of claim 1 , wherein the densified nanoimprint film has a lesser value of modulus of elasticity than the base nanoimprint film.

10. The densified nanoimprint film of claim 1 , wherein the refractive index of the densified nanoimprint film is about 10% to about 30% greater than the refractive index of the base nanoimprint film.

11. A method of forming a nanoimprint film, comprising:
positioning a substrate comprising a porous nanoimprint film within a processing chamber, wherein the porous nanoimprint film comprises nanoparticles and voids between the nanoparticles, and wherein the nanoparticles comprise zirconium oxide, niobium oxide, tantalum oxide, hafnium oxide, chromium oxide, silicon nitride, or any combination thereof; and
depositing a metal oxide on the porous nanoimprint film and within at least a portion of the voids to produce an densified nanoimprint film during an atomic layer deposition (ALD) process, wherein the metal oxide comprises niobium oxide, chromium oxide, scandium oxide, yttrium oxide, praseodymium oxide, magnesium oxide, silicon nitride, silicon oxynitride, or any combination thereof, and wherein:
the nanoparticles and the metal oxide contain different materials; and
the refractive index of the densified nanoimprint film is about 2% to about 30% greater than the refractive index of the base nanoim print film.

12. The method of claim 11 , wherein the ALD process comprises sequentially exposing the porous nanoimprint film to a metal precursor and an oxidizing agent during an ALD cycle to deposit the metal oxide, and wherein the ALD cycle is repeated from 2 times to about 50 times while depositing the metal oxide during the ALD process.

13. The method of claim 11 , wherein about 20% to about 90% of the volume occupied by the voids is filled with the metal oxide by the ALD process.

14. The method of claim 11 , wherein the densified nanoimprint film has a greater value of hardness, fracture strain, yield strength, and/or etch resistance than the base nanoimprint film.

15. The method of claim 11 , wherein the densified nanoimprint film has a lesser value of modulus of elasticity than the base nanoimprint film.

16. The method of claim 11 , wherein the refractive index of the densified nanoimprint film is about 10% to about 30% greater than the refractive index of the base nanoimprint film.

17. A method of claim 11 , wherein the porous nanoimprint film is formed on the substrate by an imprint process, comprising:
disposing an imprint composition comprising the nanoparticles on the substrate;
contacting the imprint composition with a stamp having a pattern;
converting the imprint composition to a porous nanoimprint film; and
removing the stamp from the porous nanoimprint film.

18. The method of claim 17 , wherein converting the imprint composition to the porous nanoimprint film further comprises exposing the imprint composition to a light source having a wavelength of about 300 nm to about 365 nm.

19. The method of claim 17 , wherein converting the imprint composition to the porous nanoimprint film further comprises heating the imprint composition to a temperature of about 30° C. to about 100° C. for a time period of about 30 seconds to about 1 hour.

20. An optical device with gratings, comprising:
a densified nanoimprint film, comprising:
a base nanoimprint film comprising nanoparticles, wherein the nanoparticles comprise zirconium oxide, niobium oxide, tantalum oxide, hafnium oxide, chromium oxide, silicon nitride, or any combination thereof; and

a metal oxide disposed on the base nanoimprint film and in between the nanoparticles, wherein the metal oxide comprises niobium oxide, chromium oxide, scandium oxide, yttrium oxide, praseodymium oxide, magnesium oxide, silicon nitride, silicon oxynitride, or any combination thereof, and wherein:
the nanoparticles and the metal oxide contain different materials;
about 20% to about 90% of the volume occupied by the voids is filled with the metal oxide by the ALD process; and
the refractive index of the densified nanoimprint film is about 5% to about 30% greater than the refractive index of the base nanoimprint film.

Assignees

• Applied Materials Inc

Inventors

• Ceballos Andrew
• Hourani Rami
• Ohno Kenichi
• Melnik Yuriy
• Joshi Amita

Classifications

• H10D64/01326

  Aspects related to lithography, isolation or planarisation of the conductor · CPC title

• G03F7/0002 Primary

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title

• C23C16/045

  Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates · CPC title

• C23C16/45527

  characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations · CPC title

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title