Systems and methods for predicting layer deformation

Patent metadata

Field	Value
Publication number	US-11880640-B2
Application number	US-202318118657-A
Country	US
Kind code	B2
Filing date	Mar 7, 2023
Priority date	Dec 4, 2017
Publication date	Jan 23, 2024
Grant date	Jan 23, 2024

Abstract

A method involving obtaining a resist deformation model for simulating a deformation process of a pattern in resist, the resist deformation model being a fluid dynamics model configured to simulate an intrafluid force acting on the resist, performing, using the resist deformation model, a computer simulation of the deformation process to obtain a deformation of the developed resist pattern for an input pattern to the resist deformation model, and producing electronic data representing the deformation of the developed resist pattern for the input pattern.

First claim

What is claimed is:

1. A method, comprising:
obtaining a resist deformation model for simulating a deformation process of a portion of a pattern in resist, the resist deformation model including a fluid dynamics model configured to simulate an intrafluid force acting on the resist;
performing, by a hardware computer system and using the resist deformation model, a computer simulation of the deformation process to obtain a deformation of a developed resist pattern for an input pattern to the resist deformation model; and
producing electronic data representing the deformation of the developed resist pattern for the input pattern.

2. The method of claim 1 , wherein the fluid dynamics model is based on Navier-Stokes flow equations.

3. The method of claim 1 , wherein the intrafluid force relates at least to surface tension.

4. The method of claim 1 , wherein the input pattern is provided to the resist deformation model in the form of an image of the input pattern.

5. The method of claim 4 , wherein the image is a binary image.

6. The method of claim 1 , wherein the electronic data representing the deformation is an image of the deformed developed resist pattern.

7. The method of claim 1 , wherein the deformation is determined at a plurality of locations, each location corresponding to a point that lies on a boundary of a developed or open portion of the developed resist pattern for the input pattern.

8. The method of claim 1 , wherein the resist deformation model is specified for at least two liquids in the resist pattern, wherein each of the at least two liquids has a different viscosity.

9. The method of claim 1 , wherein the resist deformation model is specified for a boundary liquid layer located at a boundary between the resist and a developed or open region in the resist pattern, wherein the boundary liquid layer has a width smaller than the width of the resist at the boundary.

10. The method of claim 1 , wherein the resist deformation model has specified therein a material layer at an upper surface of the resist, the material layer having a different viscosity than the resist or a remaining portion of the resist.

11. The method of claim 1 , further comprising configuring, based on the electronic data representing the deformation, a physical patterning process associated with the input pattern.

12. The method of claim 11 , further comprising exposing a substrate using the configured physical patterning process.

13. A non-transitory computer program product comprising machine-readable instructions, the instructions, when executed by a hardware processor system, configured to cause the hardware processor system to at least cause performance of the method of claim 1 .

14. A method, comprising:
obtaining a resist deformation model for simulating a deformation process of a portion of a pattern in resist, the resist deformation model including a fluid dynamics model having defined therein a region of material at a boundary of a resist and a developed or open region, the region at the boundary having a width smaller than the resist at the boundary;
performing, by a hardware computer system and using the resist deformation model, a computer simulation of the deformation process to obtain a deformation of a developed resist pattern for an input pattern to the resist deformation model; and
producing electronic data representing the deformation of the developed resist pattern for the input pattern.

15. The method of claim 14 , wherein the model has defined therein, on a side of the region at the boundary wherein the side is located opposite, across the region at the boundary, of the developed or open region, another material that does not deform or deforms less than the material of the region at the boundary.

16. The method of claim 15 , wherein the material of the region at the boundary comprises liquid, the other material comprises a liquid and the viscosity of the material of the region at the boundary is less than the viscosity of the other material.

17. The method of claim 14 , wherein the model has defined therein, on a side of the region at the boundary wherein the side is located opposite, across the region at the boundary, of the developed or open region, a boundary condition that tantamount specifies at that location no deformation or less deformation than the material of the region at the boundary at that location.

18. The method of claim 14 , wherein the resist deformation model has specified therein a material layer at an upper surface of the resist having a different viscosity than the resist or a remaining portion of the resist.

19. The method of claim 14 , further comprising configuring, based on the electronic data representing the deformation, a physical patterning process associated with the input pattern.

20. A non-transitory computer program product comprising machine-readable instructions, the instructions, when executed by a hardware processor system, configured to cause the hardware processor system to at least cause performance of the method of claim 14 .

Assignees

• Asml Netherlands Bv

Inventors

• Batistakis Chrysostomos
• Middlebrooks Scott Anderson
• Wuister Sander Frederik

Classifications

• G06F30/28 Primary

  using fluid dynamics, e.g. using Navier-Stokes equations or computational fluid dynamics [CFD] · CPC title

• G03F7/705

  Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions · CPC title

• G06F2119/14

  Force analysis or force optimisation, e.g. static or dynamic forces · CPC title

• G03F7/70608 Primary

  Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist · CPC title