Atomic vapor cell and making an atomic vapor cell

Patent metadata

Field	Value
Publication number	US-11879952-B2
Application number	US-202117374537-A
Country	US
Kind code	B2
Filing date	Jul 13, 2021
Priority date	Jul 14, 2020
Publication date	Jan 23, 2024
Grant date	Jan 23, 2024

Abstract

An atomic vapor cell for performing RF measurements includes: a first optical window of transparent nonconducting material free of electrically conductive materials; an intermediate frame of transparent nonconducting material free of electrically conductive materials; a second optical window disposed on the intermediate frame and including transparent nonconducting material free of electrically conductive materials to minimize distortion of radiofrequency fields by the windows and frame; and a cell aperture, wherein the atomic vapor cell is hermetically sealed by bonding between the first optical window and the second optical window to the intermediate frame.

First claim

What is claimed is:

1. An atomic vapor cell for performing RF measurements, the atomic vapor cell comprising:
a first optical window consisting essentially of transparent nonconducting material and comprising a first window bonding surface and a first cell window wall, the transparent nonconducting material of the first optical window being essentially free of electrically conductive materials including silicon to minimize distortion of radiofrequency fields by the first optical window;
an intermediate frame, disposed on the first optical window, consisting essentially of transparent nonconducting material, and comprising: a first frame bonding surface opposing and bonded to the first window bonding surface, a second frame bonding surface, and a cell frame wall, the transparent nonconducting material of the intermediate frame being essentially free of electrically conductive materials including silicon to minimize distortion of radiofrequency fields by the intermediate frame;
a second optical window disposed on the intermediate frame such that the intermediate frame is interposed between the first optical window and the second optical window, consisting essentially of transparent nonconducting material, and comprising: a second window bonding surface opposing and bonded to the second frame bonding surface, and a second cell window wall, the transparent nonconducting material of the second optical window being essentially free of electrically conductive materials including silicon to minimize distortion of radiofrequency fields by the second optical window;
a cell aperture bounded by the first cell window wall of the first optical window, the cell frame wall of the intermediate frame, and the second cell window wall of the second optical window; and
anodic bonding material interposed between the first optical window and the intermediate frame that bonds the intermediate frame to the first optical window and interposed between the second optical window and the intermediate frame that bonds the intermediate frame to the second optical window,
wherein the atomic vapor cell is hermetically sealed by bonding between the first optical window and the second optical window to the intermediate frame.

2. The atomic vapor cell of claim 1 , further comprising atomic vapors of alkali metal atoms disposed in the cell aperture.

3. The atomic vapor cell of claim 1 , further comprising a source of atomic vapors of alkali metal atoms disposed in the cell aperture.

4. The atomic vapor cell of claim 1 , further comprising additional cell apertures, wherein each of the cell apertures are sealed from one another such that each cell aperture is fluidically isolated from all other cell apertures.

5. The atomic vapor cell of claim 1 , wherein the anodic bonding material is formed from silicon, borosilicate, polycrystalline silicon, or amorphous silicon.

6. The atomic vapor cell of claim 1 , wherein the cell aperture comprises a circular cross-section along a lateral length of the cell aperture.

7. The atomic vapor cell of claim 1 , wherein the cell aperture comprises an ellipsoidal cross-section along a lateral length of the cell aperture.

8. The atomic vapor cell of claim 1 , wherein the cell aperture comprises a quadrilateral cross-section along a lateral length of the cell aperture.

9. The atomic vapor cell of claim 1 , wherein the cell aperture comprises a parallelepiped shape.

10. The atomic vapor cell of claim 1 , wherein the cell aperture comprises a cylindrical shape.

11. The atomic vapor cell of claim 1 , wherein the transparent nonconducting material of the first optical window, the second optical window, and the intermediate frame independently comprise fused silica or fused quartz.

12. The atomic vapor cell of claim 1 , wherein the first window thickness of the first optical window is from 1 mm to 10 mm.

13. The atomic vapor cell of claim 1 , wherein the second window thickness of the second optical window is from 1 mm to 10 mm.

14. The atomic vapor cell of claim 1 , wherein the frame thickness of the intermediate frame is from 1 mm to 10 mm.

15. The atomic vapor cell of claim 1 , wherein the volume of the cell aperture is from 1 mm 3 to 10 mm 3 .

16. The atomic vapor cell of claim 1 , wherein the atomic vapor cell is configured to detect radiofrequency radiation.

17. The atomic vapor cell of claim 16 , wherein the radiofrequency radiation has a wavelength from 0.1 mm to 10 5 km.

18. A process for making an atomic vapor cell using anodic bonding, the process comprising:
providing a first optical window consisting essentially of transparent nonconducting material and comprising a first window bonding surface and a first cell window wall, the transparent nonconducting material of the first optical window being essentially free of electrically conductive materials including silicon to minimize distortion of radiofrequency fields by the first optical window;
forming a first thin film comprising anodic bonding material on the first window bonding surface;
disposing an intermediate frame on the first optical window, the intermediate frame consisting essentially of transparent nonconducting material, and comprising: a first frame bonding surface opposing the first window bonding surface, a second frame bonding surface, and a cell frame wall, the transparent nonconducting material of the intermediate frame being essentially free of electrically conductive materials including silicon to minimize distortion of radiofrequency fields by the intermediate frame;
forming a second thin film comprising anodic bonding material on the second window bonding surface;
anodically bonding the first frame bonding surface of the intermediate frame to the first window bonding surface of the first optical window;
disposing a second optical window on the intermediate frame such that the intermediate frame is interposed between the first optical window and the second optical window, and the second optical window consisting essentially of transparent nonconducting material and comprising: a second window bonding surface opposing the second frame bonding surface, and a second cell window wall, the transparent nonconducting material of the second optical window being essentially free of electrically conductive materials including silicon to minimize distortion of radiofrequency fields by the second optical window;
anodically bonding the second window bonding surface of the second optical window to the second frame bonding surface of the intermediate frame;
forming, in response to the anodically bonding, a cell aperture bounded by the first cell window wall of the first optical window, the cell frame wall of the intermediate frame, and the second cell window wall of the second optical window; and
hermetically sealing the atomic vapor cell in response to anodically bonding the first optical window and the second optical window to the intermediate frame to make the atomic vapor cell.

19. The process of claim 18 , further comprising forming atomic vapors of alkali metal atoms in the cell aperture.

20. The process of claim 19 , wherein forming the atomic vapors of alkali metal atoms in the cell aperture occurs prior to hermetically sealing the atomic vapor cell.

21. The process of claim 19 , wherein forming the atomic vapors of alkali metal atoms in the cell aperture occurs prior to hermetically sealing the atomic vapor cell.

22. The process of claim 18 , further comprising forming additional cell apertures, wherein each

Assignees

• Government Of The Us Secretary Of Commerce

Inventors

• Holloway Christopher Lee
• Kitching John Edward
• Artusio-Glimpse Alexandra Brae
• Aksyuk Vladimir Anatolyevich
• Simons Matthew Thomas
• Lopez Omar Daniel

Classifications

• G01R33/26 Primary

  using optical pumping · CPC title

• G01R29/0885 Primary

  using optical probes, e.g. electro-optical, luminescent, glow discharge, or optical interferometers · CPC title

• G01R3/00

  Apparatus or processes specially adapted for the manufacture {or maintenance} of measuring instruments {, e.g. of probe tips} · CPC title

• G01R33/0052

  Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips (devices based on galvano-magnetic effect or the like H10N50/85) · CPC title