Alkali metal vapor cell apparatus and process for making alkali metal vapor cells

Patent metadata

Field	Value
Publication number	US-2020002802-A1
Application number	US-201916357650-A
Country	US
Kind code	A1
Filing date	Mar 19, 2019
Priority date	Jul 2, 2018
Publication date	Jan 2, 2020
Grant date	—

Abstract

Making alkali metal vapor cells includes: providing a preform wafer that includes cell cavities in a cavity layer; providing a sealing wafer having a cover layer and transmission apertures; disposing a deposition assembly on the sealing wafer; disposing an alkali metal precursor in the deposition assembly; disposing the sealing wafer on the preform wafer; aligning the transmission apertures with the cell cavities; subjecting the alkali metal precursor to a reaction stimulus; producing alkali metal vapor in the deposition assembly; communicating the alkali metal vapor to the cell cavities; receiving, in the cell cavities, the alkali metal vapor from the transmission apertures; producing an alkali metal condensate in the cell cavity; moving the sealing wafer such that the cover layer encapsulates the alkali metal condensate in the cell cavities; and bonding the sealing wafer to the preform wafer to make individually sealed alkali metal vapor cells in the preform wafer.

First claim

What is claimed is:

1 . A process for making a plurality of alkali metal vapor cells, the process comprising:
providing a preform wafer comprising:
a basal member;
a cavity layer disposed on the basal member; and
a plurality of cell cavities disposed in the cavity layer and bounded by a cavity wall of the cavity layer;
providing a sealing wafer comprising:
a cover layer; and
a plurality of transmission apertures disposed in the cover layer and bounded by a cover wall of the cover layer;
disposing a deposition assembly on the sealing wafer in fluid communication with the transmission apertures of the sealing wafer such that the sealing wafer is interposed between the preform wafer and the deposition assembly; disposing an alkali metal precursor in the deposition assembly; disposing the sealing wafer on the preform wafer; aligning the transmission apertures of the sealing wafer with the cell cavities such that the transmission apertures of the sealing wafer are in fluid communication with the cell cavities of the preform wafer; subjecting the alkali metal precursor in the deposition assembly to a reaction stimulus; producing, from the alkali metal precursor, alkali metal vapor in the deposition assembly in response to subjecting the alkali metal precursor to the reaction stimulus; communicating, simultaneously in parallel, the alkali metal vapor from the deposition assembly to the cell cavities through the transmission apertures; receiving, in the cell cavities, the alkali metal vapor from the transmission apertures; producing, from the alkali metal vapor, an alkali metal condensate in the cell cavity; moving the sealing wafer laterally with respect to the preform wafer such that the cover layer encapsulates the alkali metal condensate in the cell cavities; and bonding the sealing wafer to the preform wafer to make individually sealed alkali metal vapor cells in the preform wafer.

2 . The process of claim 1 , further comprising removing the deposition assembly from the sealing wafer after producing, from the alkali metal precursor, alkali metal vapor in the deposition assembly.

3 . The process of claim 1 , further comprising dicing, after bonding the sealing wafer to the preform wafer, the preform wafer to provide a select number of individually sealed alkali metal vapor cells.

4 . The process of claim 1 , further comprising introducing a buffer gas in the cell cavity, the alkali metal being inert to the buffer gas.

5 . The process of claim 1 , wherein subjecting the alkali metal precursor in the deposition assembly to the reaction stimulus comprises heating the alkali metal precursor.

6 . The process of claim 1 , wherein subjecting the alkali metal precursor in the deposition assembly to the reaction stimulus comprises irradiating the alkali metal precursor with ultraviolet radiation.

7 . The process of claim 1 , wherein disposing the alkali metal precursor in the deposition assembly comprises:
delivering a liquid composition comprising the alkali metal precursor into the deposition assembly; and heating the liquid composition to evaporate a solvent of the liquid composition.

8 . The process of claim 1 , wherein bonding the sealing wafer to the preform wafer comprises anodic bonding, fusion bonding, eutectic bonding, or a combination thereof;
the cavity layer comprises a silicon wafer; the basal member and the cover layer independently comprise glass; and a volume of the cell cavity is from 100 μm 3 to 10 mm 3 .

9 . The process of claim 1 , wherein the alkali metal precursor comprises an alkali halide, an azide, or a combination thereof.

10 . The process of claim 1 , wherein the alkali metal and the alkali metal condensate independently comprise potassium, rubidium, cesium, or a combination comprising a plurality of the foregoing alkali metals.

11 . A process for making a plurality of alkali metal vapor cells, the process comprising:
providing a preform wafer comprising:
a basal member;
a cavity layer disposed on the basal member;
a plurality of cell cavities disposed in the cavity layer and bounded by a cavity wall of the cavity layer; and
a plurality of deposition cavities disposed in the cavity layer and bounded by the cavity wall of the cavity layer, such that each deposition cavity is adjacent to a cell cavity;
disposing an alkali metal precursor in the deposition cavity of the preform wafer; providing a sealing wafer comprising a cover layer that comprises a blank; disposing the sealing wafer on the preform wafer so that a deposition surface of the sealing wafer faces and is in fluid communication with the deposition cavities of the preform wafer, such that the deposition cavities are individually isolated from fluid communication with other deposition cavities and cell cavities; subjecting the alkali metal precursor in the deposition cavities to a reaction stimulus; producing, from the alkali metal precursor, alkali metal vapor in the deposition cavities in response to subjecting the alkali metal precursor to the reaction stimulus; communicating, simultaneously in parallel, the alkali metal vapor from the deposition cavity to a deposition area on the deposition surface of the sealing wafer that covers the deposition cavity, such that each deposition area is local to an individual deposition cavity and physically separate from other deposition cavities and cell cavities; contacting the deposition area with the alkali metal vapor from the deposition cavity; producing, from the alkali metal vapor, an alkali metal condensate on the deposition area; separating the sealing wafer from the preform wafer; moving the sealing wafer laterally with respect to the preform wafer and aligning the deposition areas of the sealing wafer with the cell cavities of the preform wafer such that the individual deposition areas of the sealing wafer are in fluid communication with an individual cell cavity of the preform wafer in an aligned position and contacting the sealing wafer with the preform wafer in the aligned position to encapsulate the alkali metal condensate in individual deposition area in individual cell cavities; and bonding the sealing wafer to the preform wafer to make individually sealed alkali metal vapor cells in the preform wafer.

12 . The process of claim 11 , further comprising dicing, after bonding the sealing wafer to the preform wafer, the preform wafer to provide a select number of make individually sealed alkali metal vapor cells.

13 . The process of claim 11 , further comprising introducing a buffer gas in the cell cavity, the alkali metal being inert to the buffer gas.

14 . The process of claim 11 , wherein subjecting the alkali metal precursor in the deposition cavity to the reaction stimulus comprises heating the alkali metal precursor.

15 . The process of claim 11 , wherein subjecting the alkali metal precursor in the deposition cavity to the reaction stimulus comprises irradiating the alkali metal precursor with ultraviolet radiation.

16 . The process of claim 1 , wherein disposing the alkali metal precursor in the deposition cavity comprises:
delivering a liquid composition comprising the alkali metal precursor into the deposition cavity; and heating the liquid composition to evaporate a solvent of the liquid composition.

17 . The process of claim 1 , wherein:
bonding the sealing wafer to the preform wafer comprises anodic bonding, fusion bonding, eutectic bonding, or a combination thereof; the cavity layer comprises a silicon wafer; the basal member and the cover

Assignees

• Government Of The Us Secretary Of Commerce

Inventors

• Kitching John

Classifications

• C23C14/046 Primary

  Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates · CPC title

• G01R33/26

  using optical pumping · CPC title

• C23C14/243

  Crucibles for source material (C23C14/28, C23C14/30 take precedence) · CPC title

• C23C14/28

  by wave energy or particle radiation (C23C14/32 - C23C14/48 take precedence) · CPC title

• G04F5/14

  using atomic clocks · CPC title