Mems sensor device having integrated multiple stimulus sensing
US-2017115322-A1 · Apr 27, 2017 · US
US11878905B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11878905-B2 |
| Application number | US-202016937552-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 23, 2020 |
| Priority date | Jul 23, 2020 |
| Publication date | Jan 23, 2024 |
| Grant date | Jan 23, 2024 |
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The present disclosure related to a micro-electromechanical system (MEMS) device and a method of forming the same. The MEMS device includes a substrate, a cavity, an interconnection structure and a proof mass. The substrate includes a first surface and a second surface opposite to the first surface. The cavity is disposed in the substrate to extend between the first surface and the second surface. The interconnection structure is disposed on the first surface of the substrate, over the cavity. The proof mass is disposed on the interconnection structure, wherein the proof mass is partially suspended over the interconnection structure.
Opening claim text (preview).
What is claimed is: 1. A micro-electromechanical system device comprising: a substrate, comprising a first surface and a second surface opposite to the first surface; a cavity disposed in the substrate, extending between the first surface and the second surface; an interconnection structure disposed on the first surface of the substrate, over the cavity, the interconnection structure comprising a suspended region corresponding to the cavity and a penetrating hole in the suspended region, wherein a first end of the suspended region is closed to the penetrating hole and is not connected to the substrate; and a proof mass disposed on the interconnection structure, wherein the proof mass is partially suspended over the interconnection structure, the proof mass further comprises a base layer and a mass layer, and the base layer comprises a dielectric material, wherein at least one end of the proof mass is suspended over the interconnection structure. 2. The micro-electromechanical system device accordingly to claim 1 , wherein the base layer is directly disposed on the interconnection structure, and the mass layer is disposed on the base layer. 3. The micro-electromechanical system device accordingly to claim 1 , wherein one end of the mass layer is disposed on the base layer, and another end of the mass layer is suspended over the interconnection structure. 4. The micro-electromechanical system device accordingly to claim 1 , wherein the mass layer further comprises a protrusion surrounding a sidewall of the base layer. 5. The micro-electromechanical system device accordingly to claim 4 , wherein the protrusion directly contacts the interconnection structure. 6. The micro-electromechanical system device accordingly to claim 2 , wherein a second end of the suspended region is connected to the substrate. 7. The micro-electromechanical system device accordingly to claim 6 , wherein the base layer is disposed adjacent to the first end of the suspended region. 8. The micro-electromechanical system device accordingly to claim 6 , wherein the mass layer is extended from the first end of the suspended region to the second end of the suspended region. 9. The micro-electromechanical system device accordingly to claim 1 , further comprising an oxide layer disposed between the interconnection structure and the substrate. 10. The micro-electromechanical system device accordingly to claim 1 , wherein the cavity has a thickness the same as a thickness of the substrate.
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