Fault-tolerant operation of a current converter

Patent metadata

Field	Value
Publication number	US-11876440-B2
Application number	US-202118020864-A
Country	US
Kind code	B2
Filing date	Jun 25, 2021
Priority date	Aug 12, 2020
Publication date	Jan 16, 2024
Grant date	Jan 16, 2024

Abstract

A method for operating an electronic module which includes at least three semiconductor elements is disclosed. In the event of a defect of one of the semiconductor elements, by targeted control of at least two of the other semiconductor elements, a current is conducted via the defective semiconductor element in order to destroy or disconnect the defective semiconductor element or a weak point associated with the defective semiconductor element. This current is distributed to the semiconductor elements which are controlled in a targeted manner.

First claim

The invention claimed is:

1. A method for operating an electronic module comprising at least three semiconductor elements, the electronic module comprising at least six semiconductor elements disposed in three half-bridges, each having an upper branch and a lower branch, the method comprising:
passing a current, in the event of a defect in one of the semiconductor elements, via the defective semiconductor element by selectively activating at least two of the remaining semiconductor elements in order to destroy or open-circuit the defective semiconductor element or a weak point associated with the defective semiconductor element, wherein this current is distributed between the selectively activated semiconductor elements;
selectively actuating, in the event of a defect in one of the semiconductor elements in the upper branch in one of the half-bridges, the two semiconductor elements in the upper branch of the other two half-bridges in order to destroy or open-circuit the defective semiconductor element or the weak point associated with the defective semiconductor element; and
selectively actuating, in the event of a defect in one of the semiconductor elements in the lower branch in one of the half-bridges, the two semiconductor elements in the lower branch of the other two half-bridges in order to destroy or open-circuit the defective semiconductor element or the weak point associated with the defective semiconductor element.

2. The method of claim 1 , further comprising operating an electronic module designed to rectify or convert an AC voltage having three phases.

3. The method of claim 1 , further comprising selectively activating the two semiconductor elements at a time at which voltage ratios present on the respective phases not affected by the defective semiconductor element are the same as on the phase affected by the defective semiconductor element, or within a tolerance range around said time when said voltage ratios are substantially equal.

4. The method of claim 3 , further comprising activating the two semiconductor elements on the respective phases not affected by the defective semiconductor element at the time so that a short-circuit current flows which is divided between the two semiconductor elements, while the full short-circuit current flows via the defective semiconductor element.

5. The method of the claim 1 , further comprising repeating the selective activation of the two semiconductor elements until the defective semiconductor element or the weak point associated with the defective semiconductor element is destroyed or open-circuited.

6. A device comprising:
an electronic module comprising at least three semiconductor elements, the electronic module comprising at least six semiconductor elements disposed in three half-bridges, each having an upper branch and a lower branch; and
a control device designed to detect defects in the semiconductor elements and configured to pass a current, in the event of a defect, in one of the semiconductor elements, via the defective semiconductor element by selectively activating at least two of the remaining semiconductor elements in order to destroy or open-circuit the defective semiconductor element or a weak point associated with the defective semiconductor element, wherein this current is distributed between the selectively activated semiconductor elements; selectively actuate, in the event of a defect in one of the semiconductor elements in the upper branch in one of the half-bridges, the two semiconductor elements in the upper branch of the other two half-bridges in order to destroy or open-circuit the defective semiconductor element or the weak point associated with the defective semiconductor element; and selectively actuate, in the event of a defect in one of the semiconductor elements in the lower branch in one of the half-bridges, the two semiconductor elements in the lower branch of the other two half-bridges in order to destroy or open-circuit the defective semiconductor element or the weak point associated with the defective semiconductor element.

7. The device of claim 6 , wherein the weak point is designed as a bond wire of the semiconductor element, sized so as to carry a predetermined operating current and a current exceeding it within a predetermined limit, but not a short-circuit current or a repeatedly applied short-circuit current.

8. The device of claim 6 , wherein the weak point is designed as a narrowing of a copper layer at a connection of the semiconductor element on a printed circuit board.

Assignees

• Siemens Ag

Inventors

• Pfeifer Markus

Classifications

• H02M1/325 Primary

  with means for allowing continuous operation despite a fault, i.e. fault tolerant converters · CPC title

• H02M7/219

  in a bridge configuration · CPC title

• H02M1/32 Primary

  Means for protecting converters other than automatic disconnection · CPC title