Apparatus and method for endurance of non-volatile memory banks via wear leveling with linear indexing

Patent metadata

Field	Value
Publication number	US-11875836-B2
Application number	US-202117339854-A
Country	US
Kind code	B2
Filing date	Jun 4, 2021
Priority date	Jun 4, 2021
Publication date	Jan 16, 2024
Grant date	Jan 16, 2024

Abstract

Endurance mechanisms are introduced for memories such as non-volatile memories for broad usage including caches, last-level cache(s), embedded memory, embedded cache, scratchpads, main memory, and storage devices. Here, non-volatile memories (NVMs) include magnetic random-access memory (MRAM), resistive RAM (ReRAM), ferroelectric RAM (FeRAM), phase-change memory (PCM), etc. In some cases, features of endurance mechanisms (e.g., randomizing mechanisms) are applicable to volatile memories such as static random-access memory (SRAM), and dynamic random-access memory (DRAM). The endurance mechanisms include a wear leveling scheme that uses index rotation, outlier compensation to handle weak bits, and random swap injection to mitigate wear out attacks.

First claim

We claim:

1. An apparatus comprising:
a memory organized in a plurality of memory banks, wherein the plurality of memory banks comprises memory bit-cells, wherein an individual memory bit-cell includes a non-volatile material to store data, and wherein the non-volatile material includes one of: a non-linear polar material, a magnet, or a resistive material; and
a memory controller coupled to the memory, wherein the memory controller includes one or more circuitries which improve memory endurance of the memory via wear leveling, wherein the wear leveling is applied during read or write operations to the memory, wherein the memory controller is to apply an outlier compensation scheme before or after the wear leveling, and wherein an array outside of a memory bank of the plurality of memory banks is queried.

2. The apparatus of claim 1 , wherein an individual memory bank of the plurality of memory banks includes a gap word along with N cache lines or words, where N is a positive integer.

3. The apparatus of claim 2 , wherein the memory controller is to request a write to an address of the individual memory bank, wherein the request is a reference to the individual memory bank, and wherein a number of references is incremented by one upon the request.

4. The apparatus of claim 3 , wherein the memory controller compares the number of references with a threshold.

5. The apparatus of claim 4 , wherein the memory controller is to reset the number of references if the number of references is equal to the threshold.

6. The apparatus of claim 5 , wherein the one or more circuitries are to swap the gap word with an adjacent cache line or word in response to the number of references is equal to the threshold.

7. The apparatus of claim 6 , wherein the gap word has an associated gap pointer, wherein the one or more circuitries is to increment the associated gap pointer after the swap.

8. The apparatus of claim 1 , wherein the non-linear polar material includes one of: a ferroelectric material, a paraelectric material, or a non-linear dielectric.

9. The apparatus of claim 8 , wherein the ferroelectric material includes one of:
bismuth ferrite (BFO) with a first doping material, wherein the first doping material is one of Lanthanum or elements from lanthanide series of periodic table;
lead zirconium titanate (PZT) or PZT with a second doping material, wherein the second doping material is one of La or Nb;
a relaxor ferroelectric which includes one of: lead magnesium niobate (PMN), lead magnesium niobate-lead titanate (PMN-PT), lead lanthanum zirconate titanate (PLZT), lead scandium niobate (PSN), Barium Titanium-Bismuth Zinc Niobium Tantalum (BT-BZNT), or Barium Titanium-Barium Strontium Titanium (BT-BST);
a perovskite which includes one of: BaTiO3, PbTiO3, KNbO3, or NaTaO3;
a first hexagonal ferroelectric which includes one of: YMnO3 or LuFeO3;
a second hexagonal ferroelectric of a type h-RMnO3, where R is a rare earth element which includes one of: cerium (Ce), dysprosium (Dy), erbium (Er), europium (Eu), gadolinium (Gd), holmium (Ho), lanthanum (La), lutetium (Lu), neodymium (Nd), praseodymium (Pr), promethium (Pm), samarium (Sm), scandium (Sc), terbium (Tb), thulium (Tm), ytterbium (Yb), or yttrium (Y);
hafnium (Hf), Zirconium (Zr), Aluminum (Al), Silicon (Si), their oxides or their alloyed oxides;
hafnium oxides as Hf1-x Ex Oy, where E can be Al, Ca, Ce, Dy, Er, Gd, Ge, La, Sc, Si, Sr, Sn, or Y, wherein x and y are first and second fractions, respectively;
Al(1-x)Sc(x)N, Ga(1-x)Sc(x)N, Al(1-x)Y(x)N or Al(1-x-y)Mg(x)Nb(y)N, wherein x and y are third and fourth fractions, respectively;
HfO2 doped with one of: Al, Ca, Ce, Dy, Er, Gd, Ge, La, Sc, Si, Sr, Sn, or Y;
niobate type compounds LiNbO3, LiTaO3, Lithium iron Tantalum Oxy Fluoride, Barium Strontium Niobate, Sodium Barium Niobate, or Potassium strontium niobate; or
improper ferroelectric includes one of: [PTO/STO]n or [LAO/STO]n, where ‘n’ is between 1 to 100.

10. The apparatus of claim 8 , wherein the paraelectric material includes one of: SrTiO3, Ba(x)Sr(y)TiO3, HfZrO2, Hf—Si—O, La-substituted PbTiO3, or PMN-PT based relaxor ferroelectrics.

11. The apparatus of claim 1 , wherein the wear leveling includes a random wear leveling scheme.

12. The apparatus of claim 1 , wherein the memory controller is to refresh the non-volatile material.

13. A method to improve memory endurance of the memory via wear leveling, the method comprising:
requesting a write to an address of an individual memory bank, wherein the individual memory bank is part of a plurality of memory banks comprising memory bit cells, wherein an individual memory bit-cell includes a capacitor comprising non-linear polar material, and wherein requesting the write is a reference to the individual memory bank, wherein an individual memory bank of the plurality of memory banks includes N cache lines/words and a gap word, where N is a positive integer;
incrementing a number of references by one upon requesting the write;
comparing the number of references with a threshold;
swapping the gap word with an adjacent cache line or word in response to the number of references is equal to the threshold; and
applying an outlier compensation scheme before or after the wear leveling, wherein an array outside of a memory bank of the plurality of memory banks is queried.

14. The method of claim 13 comprising resetting the number of references if the number of references is equal to the threshold.

15. The method of claim 14 , wherein the gap word has an associated gap pointer, wherein the method comprises incrementing the associated gap pointer after swapping the gap word.

16. The method of claim 13 , wherein the non-linear polar material includes one of: a ferroelectric material, a paraelectric material, or a non-linear dielectric.

17. The method of claim 16 , wherein the ferroelectric material includes one of:
bismuth ferrite (BFO) with a first doping material, wherein the first doping material is one of Lanthanum or elements from lanthanide series of periodic table;
lead zirconium titanate (PZT) or PZT with a second doping material, wherein the second doping material is one of La or Nb;
a relaxor ferroelectric which includes one of: lead magnesium niobate (PMN), lead magnesium niobate-lead titanate (PMN-PT), lead lanthanum zirconate titanate (PLZT), lead scandium niobate (PSN), Barium Titanium-Bismuth Zinc Niobium Tantalum (BT-BZNT), or Barium Titanium-Barium Strontium Titanium (BT-BST);
a perovskite which includes one of: BaTiO3, PbTiO3, KNbO3, or NaTaO3;
a first hexagonal ferroelectric which includes one of: YMnO3 or LuFeO3;
a second hexagonal ferroelectrics of a type h-RMnO3, where R is a rare earth element which includes one of: cerium (Ce), dysprosium (Dy), erbium (Er), europium (Eu), gadolinium (Gd), holmium (Ho), lanthanum (La), lutetium (Lu), neodymium (Nd), praseodymium (Pr), promethium (Pm), samarium (Sm), scandium (Sc), terbium (Tb), thulium (Tm), ytterbium (Yb), or yttrium (Y);
hafnium (Hf), Zirconium (Zr), Aluminum (Al), Silicon (Si), their oxides or their alloyed oxides;
hafnium oxides as Hf1-x Ex Oy, where E can be Al, Ca, Ce, Dy, Er, Gd, Ge, La, Sc, Si, Sr, Sn, or Y, where x and y are first and second fractions;
Al(1-x)Sc(x)N, Ga(1-x)Sc(x)N, Al(1-x)Y(x)N or Al(1-x-y)Mg(x)Nb(y)N, where x and y are third and fourth fractions, respectively; HfO2 doped wth: Al, Ca, Ce, Dy, Er, Gd, Ge, La, Sc, Si, Sr, Sn, or Y;
niobate type compounds LiNbO3, LiTaO3, Lithium iron Tantalum Oxy Fluoride, Barium Strontium Niobate, Sodium Barium Niobate, or Potassium stron

Assignees

• Kepler Computing Inc

Inventors

• Wilkerson Christopher B
• Manipatruni Sasikanth
• Dokania Rajeev Kumar
• Mathuriya Amrita

Classifications

• G11C11/225 Primary

  Auxiliary circuits · CPC title

• G06F11/1068

  in sector programmable memories, e.g. flash disk (G06F11/1072 takes precedence) · CPC title

• G06F12/0246

  in block erasable memory, e.g. flash memory · CPC title

• G06F12/06

  Addressing a physical block of locations, e.g. base addressing, module addressing, memory dedication (G06F12/08 takes precedence) · CPC title

• G11C11/165

  Auxiliary circuits · CPC title